Toshiba Semiconductor and Storage CRS12(TE85L,Q,M)

Overview

CRS12(TE85L,Q,M) from Toshiba is a Schottky barrier diode optimized for low-voltage DC/DC converters and switching mode power supplies with output ≤12 V. It delivers 1 A average forward current, 60 V repetitive peak reverse voltage, and a low 0.58 V max forward voltage at 1 A, enabling high-efficiency rectification in compact power stages.

For engineers reviewing the CRS12(TE85L,Q,M) datasheet, CRS12(TE85L,Q,M) pinout, CRS12(TE85L,Q,M) application, or CRS12(TE85L,Q,M) equivalent, key selection criteria include thermal resistance (70 °C/W on ceramic board), junction capacitance (40 pF at 10 V), reverse leakage (≤100 μA at 60 V), and S-FLAT™ package compatibility with high-density PCB layouts.

Technical Context

The CRS12(TE85L,Q,M) employs a planar Schottky barrier structure to minimize forward conduction loss while maintaining fast recovery characteristics. Its low V_F (0.52 V typ. at 1 A) and low C_j (40 pF) support high-frequency operation up to several hundred kHz in synchronous and asynchronous buck converters.

Designed for surface-mount assembly on ceramic or glass-epoxy boards, its thermal performance is highly dependent on land pattern geometry-R_th(j-a) ranges from 70 °C/W (2 mm × 2 mm land on 0.64 mm ceramic) to 240 °C/W (1.2 mm × 1.2 mm land on 1.6 mm FR-4), requiring layout-aware thermal design.

Key Specifications

Pinout & Package

CRS12(TE85L,Q,M) uses Toshiba's S-FLAT™ package (JEITA code 3-2A1S), a 2-pin, ultra-thin surface-mount outline measuring 2.8 mm × 1.2 mm × 1.2 mm (L × W × H), weighing 0.013 g. Designed for high-density placement and reflow compatibility.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with RB050M-30 and SS12, CRS12(TE85L,Q,M) uniquely balances 60 V rating, 1 A current, ultra-low profile, and 0.58 V V_FM-making it optimal for space-constrained 12 V SMPS where both voltage margin and thermal density matter.

Availability

CRS12(TE85L,Q,M) is available at Aetrix Electronics and suitable for switching mode power supplies, DC/DC converters, and automotive auxiliary power systems requiring stable component supply and long-term manufacturability through April 2026.

Supply support for CRS12(TE85L,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on energy efficiency, miniaturization, and industrial reliability.

The CRS12(TE85L,Q,M) belongs to Toshiba's S-FLAT™ Schottky diode family, engineered specifically for high-density, high-efficiency low-voltage power conversion in consumer, industrial, and automotive electronics.

FAQ

What is the maximum allowable junction temperature for CRS12(TE85L,Q,M)?

The absolute maximum junction temperature (T_j) for CRS12(TE85L,Q,M) is +150 °C. However, Toshiba recommends limiting T_j to ≤120 °C during continuous operation to ensure high reliability and longevity. This derating guidance is based on thermal stress analysis in the Toshiba Semiconductor Reliability Handbook and applies regardless of whether the device is mounted on ceramic or glass-epoxy board. CRS12(TE85L,Q,M) must be thermally designed to meet this target under worst-case load and ambient conditions.

Does CRS12(TE85L,Q,M) support reflow soldering, and what are the peak temperature limits?

Yes, CRS12(TE85L,Q,M) is qualified for lead-free reflow soldering per J-STD-020. The peak reflow temperature must not exceed 260 °C for ≤10 seconds, with ramp-up rate ≤3 °C/s and ramp-down rate ≤6 °C/s. The S-FLAT™ package's small mass and thin profile make it sensitive to thermal shock-uniform preheating and controlled cooling are essential. CRS12(TE85L,Q,M) has been validated for standard Pb-free profiles used in high-volume manufacturing of power modules and consumer adapters.

How does the thermal resistance of CRS12(TE85L,Q,M) change with PCB land size?

CRS12(TE85L,Q,M) exhibits strong dependence of R_th(j-a) on solder land geometry: 70 °C/W with 2 mm × 2 mm land on 0.64 mm ceramic, 140 °C/W with 6 mm × 6 mm land on 1.6 mm FR-4, and 240 °C/W with 1.2 mm × 1.2 mm land on same FR-4. This variation arises from differences in copper spreading and board thermal conductivity. For reliable 1 A operation, CRS12(TE85L,Q,M) must be placed on a land pattern matching the thermal model used in derating curves-smaller lands require strict ambient temperature limits.

Is CRS12(TE85L,Q,M) RoHS compliant and halogen-free?

Yes, CRS12(TE85L,Q,M) complies with EU RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. Toshiba confirms compliance through material declarations and supplier-controlled substance management. The S-FLAT™ package uses lead-free matte tin plating and environmentally compliant molding compound. Full compliance documentation-including test reports and declaration of conformity-is available upon request for CRS12(TE85L,Q,M) to support customer regulatory submissions.

What is the reverse leakage behavior of CRS12(TE85L,Q,M) at elevated temperature?

CRS12(TE85L,Q,M) shows typical reverse leakage (I_R) of 0.001 mA at 5 V and 25 °C, rising to ~0.1 mA at 125 °C and 5 V. At rated V_RRM = 60 V, leakage reaches ~1 mA at 125 °C. This exponential increase necessitates careful thermal design-excessive junction temperature can cause thermal runaway due to positive feedback between leakage power and T_j. CRS12(TE85L,Q,M) must be operated within its derated I_F(AV)–T_a curve to avoid instability.