Toshiba Semiconductor and Storage CRS15I30B(TE85L,QM

Overview

CRS15I30B from Toshiba is a Schottky barrier diode optimized for secondary rectification and reverse-current protection in compact DC-DC converters and mobile power rails, with VRRM = 30 V, IF(AV) = 1.5 A, VFM ≤ 0.4 V at 1.5 A, Rth(j-a) = 70 °C/W (ceramic board), and housed in the ultra-thin 3-2A1S (S-FLAT) package.

For engineers reviewing the CRS15I30B datasheet, CRS15I30B pinout, CRS15I30B application, or CRS15I30B equivalent, key selection factors include low forward voltage for efficiency-critical 3.3 V/5 V output stages, thermal performance under high-density PCB layout constraints, and suitability for space-constrained portable electronics where junction-to-ambient thermal resistance and peak surge current handling (IFSM = 30 A) are design-critical.

Technical Context

The CRS15I30B employs a planar Schottky junction structure to achieve fast switching (no minority-carrier storage) and low conduction loss, targeting high-frequency synchronous rectifier replacement in buck converters operating up to 1 MHz. Its 30 V VRRM rating aligns with 24 V input systems derated to 15–20 V working voltage.

Thermal design relies on direct cathode-lead heat path (Rth(j-ℓ) = 20 °C/W) and requires careful land pattern sizing per Fig. 9.1; junction temperature must be limited to ≤120 °C under worst-case ambient and load conditions to ensure reliability, per Toshiba's derating guidance.

Key Specifications

Pinout & Package

Package: 3-2A1S (Toshiba S-FLAT), surface-mount, ultra-thin profile (0.6 mm max height), 0.013 g typical weight, optimized for high-density assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with RB055LAM-30TR and SS13-E3/5AT, the CRS15I30B delivers the lowest VFM in its class and smallest footprint, making it optimal for thermally constrained, high-efficiency 1.5 A rectification where minimal voltage drop and board area are prioritized.

Availability

CRS15I30B is available at Aetrix Electronics and suitable for USB PD adapters, smartphone power management IC output stages, and industrial IoT sensor nodes requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.

Supply support for CRS15I30B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on energy efficiency, miniaturization, and automotive-grade reliability.

The CRS15I30B belongs to Toshiba's S-FLAT Schottky diode product line, engineered specifically for high-density, high-efficiency DC-DC conversion in portable and battery-powered electronics where low forward voltage and ultra-thin packaging are essential.

FAQ

What is the maximum junction temperature specification for the CRS15I30B?

The absolute maximum junction temperature (Tj) for the CRS15I30B is 150 °C, but Toshiba recommends limiting operation to ≤120 °C under worst-case conditions to ensure long-term reliability. This derating guideline applies regardless of whether the device is mounted on ceramic or glass-epoxy PCBs and is based on thermal stress analysis in the Toshiba Semiconductor Reliability Handbook. The CRS15I30B must be thermally modeled using its specified Rth(j-a) = 70 °C/W (ceramic) or Rth(j-a) = 140 °C/W (glass-epoxy) to verify compliance.

Does the CRS15I30B have a specified reverse recovery time (trr)?

No - the CRS15I30B is a Schottky barrier diode and exhibits no minority-carrier storage, so it has no defined reverse recovery time (trr). Instead, its switching behavior is governed by junction capacitance (Cj = 82 pF @ 10 V) and series resistance, enabling clean, fast turn-off with negligible switching loss. This characteristic makes the CRS15I30B especially suitable for high-frequency DC-DC converters where trr-related losses dominate in PN-junction diodes.

What is the marking code printed on the CRS15I30B package?

Each CRS15I30B unit is laser-marked with the code "SP" on the top surface of the 3-2A1S package, as confirmed in Toshiba's official marking diagram (Fig. 7.1). This two-character code uniquely identifies the CRS15I30B variant within Toshiba's S-FLAT Schottky family and is used for traceability and counterfeit detection during incoming inspection.

Can the CRS15I30B be used in automotive applications?

The CRS15I30B is not qualified to AEC-Q101 or any automotive-grade reliability standard and is explicitly excluded from unintended use in automotive systems per Toshiba's restrictions. Its datasheet does not specify automotive temperature range (−40 °C to +125 °C), nor does it provide PPAP documentation or automotive-specific failure rate data. For automotive applications, engineers must select a formally qualified part such as the Toshiba TPSCRS15I30BQ or equivalent AEC-Q101-compliant Schottky diode instead of the CRS15I30B.

How does the thermal resistance of the CRS15I30B vary with PCB mounting conditions?

Rth(j-a) for the CRS15I30B varies significantly with PCB construction: it is 70 °C/W when mounted on a 50 mm × 50 mm ceramic board with 2 mm × 2 mm solder lands, but rises to 140 °C/W on a standard 50 mm × 50 mm glass-epoxy board with 6 mm × 6 mm lands. This 2× difference means thermal design must reference the exact board material, thickness, and land pattern dimensions used - Toshiba provides land pattern Fig. 9.1 strictly for reference, and actual Rth(j-a) must be measured or simulated for the target layout. The CRS15I30B's Rth(j-ℓ) = 20 °C/W remains stable and provides a reliable baseline for cathode-lead thermal modeling.