Toshiba Semiconductor and Storage CRS20I30B(TE85L,QM

Overview

CRS20I30B from Toshiba is a Schottky barrier diode optimized for secondary rectification and reverse-current protection in compact DC-DC converters and mobile power systems, featuring VRRM = 30 V, IF(AV) = 2 A, VFM ≤ 0.45 V at 2 A, Rth(j-a) = 70 °C/W (ceramic board), and housed in the ultra-thin S-FLAT (3-2A1S) package.

For engineers reviewing the CRS20I30B datasheet, CRS20I30B pinout, CRS20I30B application, or CRS20I30B equivalent, key selection factors include low forward voltage drop under high pulsed current, thermal performance on small PCB land patterns, reliability derating guidance for junction temperature control, and compatibility with high-density portable and automotive auxiliary power designs.

Technical Context

This Schottky diode uses a planar silicon structure with metal–semiconductor junction to achieve fast switching (no minority-carrier storage), low conduction loss, and minimal reverse recovery charge. Its 30 V VRRM rating targets 5 V–12 V output rails in synchronous and non-synchronous buck converters.

Thermal design relies on low Rth(j-ℓ) = 20 °C/W (junction-to-cathode lead) and defined land pattern (6 mm × 6 mm on 1.6 mm FR-4), enabling stable operation up to Tj = 120 °C when derated per Toshiba's reliability handbook - critical for battery-powered devices with limited airflow.

Key Specifications

Pinout & Package

Package: S-FLAT (Toshiba designation 3-2A1S), surface-mount, ultra-thin profile (0.9 mm max height), 0.013 g typical weight, designed for automated placement and reflow on fine-pitch PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with RB055LAM-40TR and SS23-E3/5AT, the CRS20I30B offers the lowest profile and best thermal resistance per unit area - making it optimal for ultra-thin, high-power-density applications where junction temperature control and board real estate are limiting factors.

Availability

CRS20I30B is available at Aetrix Electronics and suitable for USB-C power delivery adapters, automotive body control modules, and portable medical monitor battery chargers requiring stable component supply, long-lifecycle support, and RoHS-compliant sourcing.

Supply support for CRS20I30B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on energy efficiency, miniaturization, and automotive-grade reliability.

The CRS20I30B belongs to Toshiba's S-FLAT Schottky diode family, engineered specifically for high-efficiency, space-constrained DC-DC conversion in consumer, industrial, and automotive auxiliary power systems.

FAQ

What is the maximum junction temperature for safe continuous operation of the CRS20I30B?

The absolute maximum junction temperature (Tj) for the CRS20I30B is 150 °C, but Toshiba recommends limiting continuous operation to Tj ≤ 120 °C to ensure long-term reliability. This derating guideline is based on accelerated life testing and appears in the "Usage Considerations" section of the official datasheet. Operating the CRS20I30B above 120 °C without thermal margin increases risk of parametric drift and premature failure - especially under combined high-voltage and high-current stress.

Can the CRS20I30B replace a standard PN rectifier in an existing 12 V buck converter design?

Yes, the CRS20I30B can replace a PN rectifier in a 12 V buck converter, provided the reverse voltage does not exceed 30 V and peak forward current stays within 30 A. Its lower VFM (≤0.45 V vs. ~0.7–1.1 V for PN diodes) reduces conduction loss and improves efficiency - particularly at light loads. However, designers must verify reverse leakage (up to 100 µA at 30 V) does not impact standby behavior, and confirm thermal layout accommodates its S-FLAT package's unique heat-spreading characteristics.

What is the meaning of the marking "SQ" on the CRS20I30B package?

The marking "SQ" on the CRS20I30B is Toshiba's standardized top-side laser marking code for this specific Schottky diode variant. It identifies the device as part number CRS20I30B in production traceability systems and distinguishes it from other S-FLAT diodes like CRS10I30B or CRS30I30B. The marking appears alongside the full part number in datasheet Figure 7.1 and is used by assembly houses and test equipment for automated optical inspection and lot tracking.

Does the CRS20I30B meet automotive AEC-Q101 qualification requirements?

No, the CRS20I30B is not AEC-Q101 qualified. Toshiba positions this device for industrial, consumer, and computing applications - not automotive powertrain or safety-critical systems. While its absolute maximum ratings (e.g., Tstg = −55 to +150 °C) overlap with AEC-Q101 temperature ranges, no AEC-Q101 stress test reports or qualification certificates are published for CRS20I30B. For automotive body electronics, consider Toshiba's AEC-Q101-qualified equivalents such as the DF2S6MCT-7.

How does the thermal resistance of the CRS20I30B vary between ceramic and FR-4 board mounting?

Rth(j-a) for the CRS20I30B is 70 °C/W when mounted on a 50 mm × 50 mm ceramic board with 2 mm × 2 mm pads, but rises to 140 °C/W on a standard 50 mm × 50 mm FR-4 board with 6 mm × 6 mm pads. This 2× difference reflects the lower thermal conductivity of FR-4 versus ceramic. Designers must use the appropriate Rth(j-a) value corresponding to their actual PCB material and land pattern - using the ceramic value for FR-4 layouts will underestimate junction temperature and risk thermal runaway.