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Toshiba Semiconductor and Storage CRS30I30A(TE85L,QM
- Part No.:
- CRS30I30A(TE85L,QM
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single Diodes
- Package:
- SOD-123F
- Datasheet:
-
CRS30I30A(TE85L,QM.pdf
- Description:
- DIODE SCHOTTKY 30V 3A S-FLAT
- Quantity:
- Payment:
- Shipping:
Inventory:1,977
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Product details
Overview
CRS30I30A from Toshiba is a Schottky barrier diode optimized for secondary rectification and reverse-current protection in compact DC-DC converters and mobile power circuits, featuring VRRM = 30 V, IF(AV) = 3 A, VFM ≤ 0.49 V at 3 A, Rth(j-a) = 70 °C/W (ceramic board), and housed in the ultra-thin S-FLAT (3-2A1S) package.
For engineers reviewing the CRS30I30A datasheet, CRS30I30A pinout, CRS30I30A application, or CRS30I30A equivalent, this page delivers verified electrical ratings, thermal behavior under real mounting conditions, junction-to-lead thermal resistance, and validated use cases in high-density portable and switching regulator designs.
Technical Context
The CRS30I30A employs a planar Schottky barrier structure with low forward voltage drop and fast recovery characteristics, enabling high-efficiency operation in continuous conduction mode (CCM) and discontinuous conduction mode (DCM) topologies. Its 30 V VRRM rating targets 5 V–12 V output rails where low-loss rectification is critical.
Thermal performance is defined by two distinct Rth values: 70 °C/W (junction-to-ambient on ceramic board) and 20 °C/W (junction-to-lead), indicating strong heat conduction through the cathode lead-essential for thermally constrained PCB layouts. The device's IFSM = 30 A supports brief surge events without degradation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 30 V - Supports input/output isolation up to 30 V reverse bias in buck, boost, and flyback secondaries. |
| IF(AV) | 3 A - Sustains continuous forward current in compact 5 V/3 A or 12 V/2.5 A point-of-load converters. |
| VFM (max) | 0.49 V @ 3 A - Reduces conduction loss to <1.5 W at full load, minimizing thermal stress in thin-profile assemblies. |
| Rth(j-ℓ) | 20 °C/W - Enables direct thermal coupling to copper pour or heatsink via cathode lead, critical for >1 W dissipation. |
| Cj | 82 pF @ 10 V - Limits capacitive switching loss and EMI in high-frequency (>500 kHz) SMPS applications. |
| IRRM (max) | 100 µA @ 30 V - Defines leakage-limited hold-off capability in battery-backup and OR-ing configurations. |
Pinout & Package
Package: S-FLAT (Toshiba designation 3-2A1S), surface-mount, ultra-thin profile (0.9 mm max height), 0.013 g typical weight, optimized for automated placement and reflow in high-density mobile PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Anode) | Forward current entry point | Connected to switch node or input rail; requires low-inductance trace routing to minimize ringing. |
| 2 (Cathode) | Forward current exit / thermal path | Serves as primary heat conduction path; must be soldered to ≥6 mm × 6 mm copper land on glass-epoxy board. |
Key Features
| Feature | Design Value |
|---|---|
| Low VFM | 0.49 V max at 3 A enables >95% efficiency in 5 V synchronous rectifier replacements where MOSFET gate drive is unavailable. |
| High IFSM | 30 A non-repetitive surge rating withstands inrush currents during hot-plug or load-step transients in USB PD and PMIC outputs. |
| S-FLAT package | 0.9 mm profile allows stacking under connectors or beneath shields in smartphones and wearables without mechanical interference. |
| Junction temperature limit | 150 °C max Tj permits operation in sealed enclosures up to 85 °C ambient when derated per Ta–IF(AV) curve (Fig. 10.3). |
Applications
| Secondary Rectification in Switching Regulators | Reverse-Current Protection in Mobile Devices |
|---|---|
Use Scenario: Output rectification in 500 kHz–2 MHz buck converters powering SoCs in tablets and IoT gateways. IC Role / Device Role / Timing Role: Uncontrolled rectifier replacing synchronous MOSFETs where control complexity or cost must be minimized. Use Value: Delivers 0.49 V forward drop at 3 A, reducing conduction loss by 40% vs. standard PN diodes and enabling smaller output capacitors. |
Use Scenario: Reverse-polarity and backfeed protection between dual batteries or USB-C VBUS and system rail in handheld medical monitors. IC Role / Device Role / Timing Role: Low-loss blocking diode preventing current reversal during battery switchover or adapter disconnection. Use Value: 100 µA max reverse leakage at 30 V ensures <1 µA standby drain, preserving battery life over multi-week idle periods. |
| Compact DC-DC Modules for Wearables | OR-ing Diodes in Portable Power Banks |
Use Scenario: Input rectification in 3.3 V/2 A micro-module supplying BLE radios and sensors in smart rings and hearables. IC Role / Device Role / Timing Role: High-density discrete rectifier integrated into 6 mm × 6 mm module footprint with minimal thermal overhead. Use Value: 0.013 g mass and 0.9 mm height allow co-location with inductors and ICs without height conflicts in sub-5 mm total stack-up. |
Use Scenario: Parallel cell balancing and load-sharing in dual-cell 7.4 V power banks with independent charging paths. IC Role / Device Role / Timing Role: Low-VF OR-ing element ensuring minimal voltage drop between cells and output bus during discharge. Use Value: 20 °C/W junction-to-lead thermal resistance enables stable 3 A operation without external heatsinking, simplifying mechanical design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RB055LAM-40 (ROHM) | VRRM = 40 V, VFM = 0.45 V @ 3 A, same SOD-123FL package but higher reverse voltage margin. | Better suited for 12 V input systems with transient overvoltage risk; slightly lower forward drop improves efficiency at light loads. | Select RB055LAM-40 if system-level surge testing exceeds 30 V or if 12 V rail stability is prioritized over minimal height. |
| SS33 (ON Semiconductor) | VRRM = 30 V, VFM = 0.52 V @ 3 A, SMA package (1.6 mm height) vs. S-FLAT's 0.9 mm. | Higher profile limits use in ultra-thin devices; wider thermal resistance range (Rth(j-a) = 75 °C/W) reduces power handling in dense layouts. | Choose SS33 only when existing SMA footprint compatibility outweighs height and thermal constraints in legacy designs. |
Compared with RB055LAM-40 and SS33, the CRS30I30A offers the lowest profile (0.9 mm) and best thermal conduction via cathode lead (20 °C/W), making it optimal for space-constrained, thermally aggressive mobile power stages where 30 V rating is sufficient.
Availability
CRS30I30A is available at Aetrix Electronics and suitable for secondary rectification in switching regulators, reverse-current protection in mobile devices, compact DC-DC modules for wearables, OR-ing diodes in portable power banks, and high-density board assembly requiring stable component supply and consistent S-FLAT packaging.
Supply support for CRS30I30A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures high-reliability discrete semiconductors, with global leadership in Schottky diodes, MOSFETs, and IGBTs for power management and automotive applications.
The CRS30I30A belongs to Toshiba's S-FLAT Schottky diode product line, engineered specifically for ultra-thin, high-current rectification in consumer portable electronics where board space and thermal headroom are severely limited.
FAQ
What is the maximum junction temperature for the CRS30I30A?
The absolute maximum junction temperature (Tj) for the CRS30I30A is 150 °C. However, Toshiba recommends limiting steady-state operation to ≤120 °C to ensure long-term reliability, especially under combined high-temperature and high-voltage stress. Derating guidance is provided in Fig. 10.3 (Ta(max)–IF(AV) curve) and Section 8 of the datasheet.
Does the CRS30I30A have a specified thermal resistance from junction to case?
No-the CRS30I30A datasheet specifies Rth(j-ℓ) = 20 °C/W (junction-to-lead) and Rth(j-a) = 70 °C/W (junction-to-ambient on ceramic board), but does not define a standardized "junction-to-case" value. Thermal design must rely on the cathode lead (Pin 2) as the primary conduction path, using the provided land pattern dimensions and board material data.
Can the CRS30I30A be used in place of a synchronous rectifier MOSFET?
The CRS30I30A serves as a passive rectifier and cannot replace a synchronous rectifier MOSFET in actively controlled topologies. It is suitable only where uncontrolled rectification is acceptable-e.g., in simpler buck converters lacking gate drive circuitry. Its 0.49 V VFM provides lower loss than PN diodes but higher loss than optimally driven MOSFETs.
What is the marking code printed on the CRS30I30A package?
The CRS30I30A is marked with "SR" as its top-side marking code, per Figure 7.1 in the official Toshiba datasheet. This 2-character code identifies the device on the S-FLAT (3-2A1S) package and is used for traceability and visual verification during assembly and inspection.
Is the CRS30I30A RoHS compliant and halogen-free?
Yes-the CRS30I30A meets RoHS Directive 2011/65/EU requirements and is halogen-free, as confirmed by Toshiba's environmental compliance documentation. Customers should consult the latest RoHS certificate and material declaration available via Toshiba's official website or authorized distributors for project-specific validation.
CRS30I30A(TE85L,QM Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- SOD-123F
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 30 V
- Current - Average Rectified (Io):
- 3A
- Voltage - Forward (Vf) (Max) @ If:
- 490 mV @ 3 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 100 µA @ 30 V
- Capacitance @ Vr, F:
- 82pF @ 10V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- S-FLAT (1.6x3.5)
- Operating Temperature - Junction:
- 150°C (Max)
CRS30I30A(TE85L,QM FAQ
1.How can I place an order for CRS30I30A(TE85L,QM through Aetrix?
Please submit a Request for Quotation (RFQ) for CRS30I30A(TE85L,QM on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CRS30I30A(TE85L,QM reliable?
The price and inventory of CRS30I30A(TE85L,QM are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CRS30I30A(TE85L,QM is usually 5 days.
3.What payment methods are accepted for CRS30I30A(TE85L,QM?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CRS30I30A(TE85L,QM transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CRS30I30A(TE85L,QM?
CRS30I30A(TE85L,QM orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CRS30I30A(TE85L,QM order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CRS30I30A(TE85L,QM?
For technical support, including CRS30I30A(TE85L,QM datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CRS30I30A(TE85L,QM requirements.
6.How does Aetrix verify that CRS30I30A(TE85L,QM is sourced from the original manufacturer or authorized distributors?
All CRS30I30A(TE85L,QM products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CRS30I30A(TE85L,QM meets industry standards.
7.What is the process for return or replacement of CRS30I30A(TE85L,QM?
All CRS30I30A(TE85L,QM units undergo pre-shipment inspection (PSI). If there is an issue with CRS30I30A(TE85L,QM, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CRS30I30A(TE85L,QM part is unused and in its original packaging.
Return procedure for CRS30I30A(TE85L,QM:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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