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Diodes Incorporated CTA2N1P-7-F
- Part No.:
- CTA2N1P-7-F
- Manufacturer:
- Diodes Incorporated
- Category:
- Special Purpose
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
CTA2N1P-7-F.pdf
- Description:
- TRANS ARRAY NPN/P-CH 60V SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:9
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Product details
Overview
CTA2N1P-7-F from Diodes Incorporated is an obsolete complex transistor array integrating an MMBT4401 NPN bipolar transistor and a BSS84 P-channel MOSFET in a single SOT-363 package. It delivers 600 mA collector current (Q1), −130 mA drain current (Q2), 40 V VCEO, −50 V VDSS, and 150 mW total power dissipation, enabling compact dual-function switching in space-constrained DC-DC bias networks and level-shifting interfaces.
For engineers reviewing the CTA2N1P-7-F datasheet, CTA2N1P-7-F pinout, CTA2N1P-7-F application, or CTA2N1P-7-F equivalent, this page provides verified technical context, validated pin assignments, confirmed electrical specifications, real-world use cases, and documented alternative parts - all derived from Diodes' official DS30295 Rev. 8-4 datasheet and mechanical drawings.
Technical Context
This dual-element device combines complementary silicon technologies: Q1 operates as a general-purpose NPN switch with hFE = 40–300 at IC = 1–500 mA and fT = 250 MHz; Q2 functions as a logic-level P-channel enhancement-mode MOSFET with VGS(th) = −0.8 to −2.0 V and RDS(on) = 10 Ω at VGS = −5 V. Both elements share thermal coupling within the same die island.
The SOT-363 package supports surface-mount assembly with 0.65 mm pitch leads, moisture sensitivity level 1, and UL 94V-0 flammability rating. Electrical isolation between Q1 and Q2 is maintained via internal substrate separation - no shared terminals exist beyond common ground reference in typical configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Total Power Dissipation | 150 mW - limits combined continuous switching loss in ambient ≤25°C on standard FR-4 PCB |
| Q1 VCEO | 40 V - defines maximum safe collector-emitter voltage swing for NPN switching stage |
| Q2 VDSS | −50 V - sets absolute drain-source blocking capability for P-MOSFET element |
| Q1 hFE @ IC=10mA | 40–100 - determines base drive requirement for saturated switching at moderate load currents |
| Q2 RDS(on) | 10 Ω @ VGS=−5 V - establishes on-state conduction loss for low-current high-side loads |
| Thermal Resistance θJA | 833 °C/W - indicates junction-to-ambient thermal path efficiency under specified PCB layout |
| Operating Temperature | −55°C to +150°C - supports industrial and automotive under-hood environments with derating |
Pinout & Package
Package: SOT-363 (SC-70-6), 6-pin surface-mount plastic package with 0.65 mm lead pitch, UL 94V-0 rated molding compound, and matte tin lead finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Q1 Emitter | Emitter terminal of integrated MMBT4401 NPN transistor; common reference for base drive and load return |
| 2 | Q1 Base | Control input for NPN transistor; requires current-limited drive due to bipolar nature |
| 3 | Q1 Collector | Output node for NPN switch; connects to load high-side or pull-down network |
| 4 | Q2 Source | Source terminal of integrated BSS84 P-MOSFET; tied to positive rail in high-side switch configuration |
| 5 | Q2 Gate | Control input for P-MOSFET; referenced to source; negative gate voltage enables conduction |
| 6 | Q2 Drain | Output node for P-MOSFET; delivers switched current to load when VGS ≤ VGS(th) |
Key Features
| Feature | Design Value |
|---|---|
| NPN + P-MOSFET integration | Single-package solution replaces discrete pair, reducing board area by ~40% vs. separate SOT-23 devices |
| Complementary switching topology | Enables push-pull or level-shifted drive without external polarity inversion circuitry |
| Logic-compatible MOSFET threshold | VGS(th) range (−0.8 to −2.0 V) allows direct interface with 3.3 V or 5 V microcontroller GPIO |
| High-temperature operation | Rated up to +150°C junction temperature supports under-hood and power supply control applications |
| Green and RoHS-compliant construction | Halogen-free molding compound and lead-free plating meet environmental compliance requirements |
Applications
| DC-DC Converter Bias Network | Microcontroller-Level Shift Interface |
|---|---|
|
Use Scenario: Providing isolated gate drive and feedback bias for synchronous buck converter topologies using discrete power FETs. IC Role / Device Role / Timing Role: Q1 acts as fast-turn-off NPN clamp; Q2 serves as high-side enable switch for auxiliary LDO or optocoupler bias supply. Use Value: Eliminates need for two separate SOT-23 placements while maintaining independent control timing paths and thermal decoupling. |
Use Scenario: Translating 3.3 V logic outputs from an MCU to control 5 V or 12 V peripheral modules with inverted enable signals. IC Role / Device Role / Timing Role: Q1 implements active-low open-collector output; Q2 provides high-side active-high switching for VCC-referenced loads. Use Value: Achieves bidirectional level translation with <10 ns propagation delay and no external pull-up resistors required for Q2 source connection. |
| LED Driver Current Sink/Sink-Switch | Low-Power Sensor Signal Conditioning |
|
Use Scenario: Driving multiple indicator LEDs in automotive dashboards where space and thermal budget are constrained. IC Role / Device Role / Timing Role: Q1 sinks LED current through collector; Q2 switches power to sensor bias rails during sleep/wake cycles. Use Value: Enables simultaneous LED dimming (via Q1 base PWM) and sensor power gating (via Q2 gate control) from one footprint. |
Use Scenario: Conditioning analog sensor outputs (e.g., thermistor, photodiode) requiring programmable gain and offset correction. IC Role / Device Role / Timing Role: Q1 functions as emitter-follower buffer; Q2 acts as precision current mirror reference switch. Use Value: Reduces component count in analog front-end designs while preserving signal integrity via matched transistor characteristics on shared die. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-transistor switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CA3082E-TB | Two NPN transistors only; no MOSFET; higher hFE (100 min), but lacks complementary channel | Suitable for current mirror or differential pair circuits, not high-side switching | Select when matched NPN pairs are needed without MOSFET functionality |
| DMN3026LSD-13 | Dual N-channel MOSFET (not NPN+P); RDS(on) = 32 mΩ @ VGS=10 V; no bipolar element | Better for high-efficiency low-side switching, but cannot replicate NPN saturation behavior | Choose for high-current, low-loss N-MOS switching where bipolar gain and VBE matching are unnecessary |
Compared with CTA2N1P-7-F, CA3082E-TB offers superior NPN matching but no high-side MOSFET capability, while DMN3026LSD-13 delivers lower on-resistance for N-MOS loads but eliminates bipolar switching flexibility and complementary topology support.
Availability
CTA2N1P-7-F is available at Aetrix Electronics and suitable for DC-DC converter bias networks, microcontroller-level shift interfaces, and LED driver current sink/sink-switch applications requiring stable component supply despite its obsolete status - subject to remaining factory stock and traceable legacy sourcing.
Supply support for CTA2N1P-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for power management, signal integrity, and protection applications.
The CTA2N1P belongs to Diodes' Complex Transistor Array product line, designed to reduce board space and improve thermal coupling in mixed-signal switching applications requiring both bipolar and MOSFET characteristics in one package.
FAQ
Is CTA2N1P-7-F still in production?
No - Diodes Incorporated officially discontinued CTA2N1P-7-F, marking it "OBSOLETE" in DS30295 Rev. 8-4 (October 2021). Aetrix Electronics supplies remaining factory inventory with full traceability and documentation, but no new production runs are planned.
Can CTA2N1P-7-F be replaced with CTA2P1N?
CTA2P1N is a complementary version (PNP/N-Channel), not a drop-in replacement. Pin 1 is Q1 emitter (PNP), whereas CTA2N1P has Q1 emitter on pin 1 (NPN). Swapping them would invert logic polarity and risk latch-up; redesign of base/gate drive networks is required.
What is the maximum safe operating current for Q2?
The BSS84 MOSFET element (Q2) is rated for −130 mA continuous drain current at TA = 25°C. Derating applies above 25°C ambient: at 85°C, max ID drops to approximately −85 mA based on thermal resistance and power dissipation limits.
Does CTA2N1P-7-F support PWM switching at 1 MHz?
Yes - Q1's fT = 250 MHz and Q2's tD(ON)/tD(OFF) ≤ 10/18 ns support clean 1 MHz PWM operation, provided layout minimizes parasitic inductance and gate drive impedance is ≤50 Ω per Diodes' test conditions.
CTA2N1P-7-F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN, P-Channel
- Applications:
- General Purpose
- Voltage - Rated:
- 40V NPN, 50V P-Channel
- Current Rating (Amps):
- 600mA NPN, 130mA P-Channel
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
CTA2N1P-7-F FAQ
1.How can I place an order for CTA2N1P-7-F through Aetrix?
Please submit a Request for Quotation (RFQ) for CTA2N1P-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CTA2N1P-7-F reliable?
The price and inventory of CTA2N1P-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CTA2N1P-7-F is usually 5 days.
3.What payment methods are accepted for CTA2N1P-7-F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CTA2N1P-7-F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CTA2N1P-7-F?
CTA2N1P-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CTA2N1P-7-F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CTA2N1P-7-F?
For technical support, including CTA2N1P-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CTA2N1P-7-F requirements.
6.How does Aetrix verify that CTA2N1P-7-F is sourced from the original manufacturer or authorized distributors?
All CTA2N1P-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CTA2N1P-7-F meets industry standards.
7.What is the process for return or replacement of CTA2N1P-7-F?
All CTA2N1P-7-F units undergo pre-shipment inspection (PSI). If there is an issue with CTA2N1P-7-F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CTA2N1P-7-F part is unused and in its original packaging.
Return procedure for CTA2N1P-7-F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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