Diodes Incorporated CTA2P1N-7

Overview

CTA2P1N from Diodes Incorporated is an obsolete complex transistor array integrating a PNP bipolar transistor (MMBT4403 type) and an N-channel MOSFET (2N7002 type) in a single SOT-363 package. It delivers V_CEO = −40 V, I_C = −600 mA for the PNP element and V_DSS = 60 V, R_DS(on) = 3.2 Ω @ V_GS = 5 V for the MOSFET element, enabling compact dual-function switching in space-constrained DC-DC and load control circuits.

For engineers reviewing the CTA2P1N datasheet, CTA2P1N pinout, CTA2P1N application, or CTA2P1N equivalent, this page provides verified electrical parameters, validated terminal mapping, confirmed thermal derating behavior, and documented complementary part alternatives for legacy design continuity and obsolescence mitigation.

Technical Context

The CTA2P1N integrates two independent semiconductor elements: Q1 is a PNP bipolar transistor with h_FE = 30–300 across I_C = −100 µA to −500 mA and V_CE(SAT) = −0.40 V @ I_C = −150 mA/I_B = −15 mA; Q2 is an enhancement-mode N-channel MOSFET with V_GS(th) = 1.0–2.0 V, g_FS = 80 mS, and C_iss = 22–50 pF.

No shared biasing or internal interconnection exists between Q1 and Q2 - both operate as discrete devices within one package. Thermal resistance R_θJA = 833 °C/W is specified for the total device on FR-4 PCB per AP02001 layout, and maximum junction temperature is rated at +150 °C.

Key Specifications

Pinout & Package

SOT-363 package: 6-terminal plastic molded case, 2.20 mm × 1.35 mm footprint, 0.95 mm height, matte tin-plated Alloy 42 leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-transistor switching applications.

Compared with CTA2P1N, CTA2N1P offers symmetrical complementary switching but requires redesign of gate drive polarity, while ZXTD0905N delivers superior R_DS(on) and h_FE at the cost of non-interchangeable pin mapping and obsolescence status differences.

Availability

CTA2P1N is available at Aetrix Electronics and suitable for legacy system repair, industrial controller refurbishment, and aerospace maintenance requiring stable component supply despite manufacturer discontinuation status.

Supply support for CTA2P1N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and Malaysia.

The CTA2P1N belongs to Diodes' Complex Transistor Array product line, engineered to reduce PCB real estate and assembly cost in space-constrained power management and interface circuits where dual-function switching is required.

FAQ

Is CTA2P1N still in production?

No - Diodes Incorporated officially discontinued CTA2P1N as of October 2021 (DS30296 Rev. 10-4). It is marked "OBSOLETE – PART DISCONTINUED" in all official documentation. Aetrix Electronics maintains limited legacy stock for end-of-life support and offers verified alternatives with documented parametric alignment.

What is the correct pin 1 orientation for CTA2P1N?

Per DS30296 Figure 1, pin 1 is the leftmost terminal when the marking side (A80 + date code) faces up and the tab/cut corner is oriented at the upper-right. Pin order is 1–2–3 on the top row (E-B-C of Q1) and 4–5–6 on the bottom row (D-G-S of Q2), matching standard SOT-363 pinout conventions.

Can CTA2P1N be used in new designs?

Diodes does not recommend CTA2P1N for new designs due to its discontinued status and lack of long-term supply assurance. For new projects, consider ZXTD0905N (active, improved specs) or CTA2N1P (active, complementary function), both in SOT-363 and supported by full datasheets and application notes.

What is the maximum safe operating current for Q1 and Q2 simultaneously?

Simultaneous operation must respect the total device power limit of 150 mW. At 25 °C ambient, Q1 contributes up to 90 mW (I_C = −500 mA × V_CE(SAT) = −0.75 V ≈ 375 mW - but derated), while Q2 contributes up to 60 mW (I_D = 200 mA × R_DS(on) = 3.2 Ω ≈ 128 mW - also derated); combined thermal budget requires PCB-level derating per Fig. 7 in DS30296.