Toshiba Semiconductor and Storage CTS521,L3F
- Part No.:
- CTS521,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single Diodes
- Package:
- SOD-882
- Datasheet:
-
CTS521,L3F.pdf
- Description:
- DIODE SCHOTTKY 30V 200MA CST2
- Quantity:
- Payment:

- Shipping:

Inventory:158,133
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CTS521,L3F from Toshiba is a silicon epitaxial Schottky barrier diode optimized for high-speed switching in space-constrained DC-DC converters and power management circuits, featuring VF(3) ≤ 0.5 V at 200 mA, VR = 30 V, IO = 200 mA average rectified current, and ultra-thin CST2 package (0.40 mm max thickness) used in portable battery-powered devices.
For engineers reviewing the CTS521,L3F datasheet, CTS521,L3F pinout, CTS521,L3F application, or CTS521,L3F equivalent, key selection criteria include forward voltage at rated current, reverse leakage at 30 V, thermal derating under continuous load, and land pattern compatibility with the CST2 footprint for high-density PCB layouts.
Technical Context
The CTS521,L3F employs a planar Schottky junction structure on silicon epitaxial substrate to achieve low forward conduction loss while maintaining fast recovery characteristics. Its design targets low-voltage, high-frequency rectification where minimal VF and compact size are critical.
Thermal performance is defined by mounting on a 20 mm × 20 mm glass-epoxy board with 4 mm × 4 mm copper pads; junction temperature must be limited to 125 °C under continuous operation, and reverse leakage (≤30 µA at VR = 30 V) requires careful thermal management to avoid runaway.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 30 V - Maximum blocking voltage before breakdown; sets upper limit for input/output rail voltage in buck/boost converters. |
| Forward Voltage (VF(3)) | 0.5 V max at IF = 200 mA - Directly determines conduction loss and efficiency in low-VOUT power stages. |
| Average Rectified Current (IO) | 200 mA - Continuous DC current handling capability under specified thermal conditions; defines usable output current range. |
| Reverse Current (IR(2)) | 30 µA max at VR = 30 V - Critical for standby power budgeting and thermal stability in high-temperature environments. |
| Total Capacitance (Ct) | 25 pF typ. at VR = 0 V, f = 1 MHz - Impacts high-frequency switching noise and EMI filtering requirements. |
| Package Thickness | 0.40 mm max - Enables use in ultra-thin consumer electronics such as wearables and slim IoT sensors. |
Pinout & Package
The CTS521,L3F is housed in the CST2 surface-mount package - a 2-pin, ultra-thin, leadless chip-scale device with exposed cathode/anode terminals and no molded body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to higher-potential node in forward bias; serves as primary heat-sinking path via solder pad. |
| 2 | Anode | Connected to lower-potential node; polarity-sensitive terminal requiring correct PCB orientation during placement. |
Key Features
| Feature | Design Value |
|---|---|
| Low forward voltage | VF(3) ≤ 0.5 V at 200 mA reduces conduction loss by >30% vs. standard PN diodes in 3.3 V–5 V power rails. |
| Ultra-thin profile | 0.40 mm max thickness enables integration into sub-1 mm height assemblies like smart bands and hearing aids. |
| Compact CST2 footprint | 0.8 mm × 0.6 mm outline minimizes PCB area usage without sacrificing thermal pad area for solder joint reliability. |
| Low junction capacitance | 25 pF typical value supports clean edge transitions in >1 MHz switching applications with reduced ringing. |
Applications
| USB Power Delivery Adapter | Wireless Charging Receiver |
|---|---|
Use Scenario: Secondary-side synchronous rectification in 15–20 W GaN-based USB PD adapters operating at 200–500 kHz. IC Role / Device Role / Timing Role: Low-loss freewheeling diode replacing MOSFET gate drive complexity in cost-sensitive designs. Use Value: 0.5 V VF(3) cuts conduction loss by ~120 mW vs. 0.7 V Si diode at 200 mA, improving full-load efficiency by 0.8%. | Use Scenario: Output rectification in Qi-compliant 5–15 W wireless charging receiver modules integrated into earbuds and trackers. IC Role / Device Role / Timing Role: High-speed AC-to-DC conversion of 100–200 kHz resonant tank output with minimal voltage drop. Use Value: 0.40 mm thickness allows stacking beneath battery cells in <8 mm total device height constraints. |
| Portable Medical Sensor | BLE Beacon Power Path |
Use Scenario: Reverse polarity protection and battery backup switching in Class II wearable ECG monitors powered by coin cells. IC Role / Device Role / Timing Role: Low-leakage (<30 µA at 3 V) isolation diode preventing battery drain during USB charging cycles. Use Value: 30 µA IR(2) at 30 V ensures <1 µA standby current contribution when used with 3.0 V Li-ion systems. | Use Scenario: OR-ing diode in dual-power (battery + energy harvesting) BLE beacon nodes with intermittent transmission duty cycles. IC Role / Device Role / Timing Role: Fast-turn-on rectifier enabling seamless transition between power sources without brownout. Use Value: 200 mA IO rating supports peak 150 mA BLE radio bursts while maintaining <0.5 V drop across the device. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RBS205T100 | Higher VR = 100 V, larger SOD-523 package (0.9 mm × 0.7 mm), VF(3) = 0.55 V max at 200 mA | Better suited for industrial 24 V input rails; less optimal for ultra-thin consumer form factors | Select RBS205T100 only if system requires >30 V reverse blocking margin and board height >0.5 mm |
| RB521S-30 | Same VR = 30 V, identical CST2 package, VF(3) = 0.45 V max at 200 mA, but IR(2) = 100 µA max at 30 V | Lower VF improves efficiency, but higher leakage demands stricter thermal control in sealed enclosures | Choose RB521S-30 where efficiency is prioritized over leakage-limited thermal design |
Compared with RBS205T100 and RB521S-30, the CTS521,L3F offers the best balance of ultra-low profile (0.40 mm), moderate leakage (≤30 µA), and proven reliability in high-volume portable electronics - making it preferred for height-critical, thermally constrained, and cost-sensitive designs.
Availability
CTS521,L3F is available at Aetrix Electronics and suitable for USB PD adapters, wireless charging receivers, portable medical sensors, and BLE beacon power paths requiring stable component supply across production lifecycles.
Supply support for CTS521,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on energy efficiency and miniaturization.
The CTS521,L3F belongs to Toshiba's CST2-series Schottky diodes, engineered specifically for ultra-thin, high-efficiency DC-DC rectification in battery-powered portable electronics.
FAQ
What is the maximum reverse voltage rating for CTS521,L3F?
The CTS521,L3F has a maximum reverse voltage (VR) rating of 30 V. This value is guaranteed under standard test conditions (Ta = 25 °C) and defines the highest DC or peak AC voltage the device can block without breakdown. Exceeding this rating risks irreversible junction damage, especially under elevated temperature or surge conditions.
What does the marking code "79" indicate on CTS521,L3F?
The marking code "79" laser-etched on the top surface of the CTS521,L3F identifies the specific device variant within the CTS521 family and confirms compliance with Toshiba's traceability and lot-control standards. It is not a date code or generic identifier - it corresponds directly to the CTS521,L3F's electrical binning and packaging configuration per Rev.3.0.A datasheet.
Can CTS521,L3F be used in automotive applications?
No, the CTS521,L3F is not qualified for automotive use. Toshiba explicitly restricts its use in equipment requiring extraordinarily high reliability - including automobiles - per the "Unintended Use" clause in the datasheet. Its temperature range (−40 to +100 °C) and qualification level do not meet AEC-Q101 requirements, and thermal runaway risk under sustained high-voltage bias makes it unsuitable for vehicle subsystems.
How is thermal performance defined for CTS521,L3F?
Thermal performance of the CTS521,L3F is specified with mounting on a 20 mm × 20 mm glass-epoxy PCB using 4 mm × 4 mm copper pads. Under those conditions, its maximum junction temperature is 125 °C, and power dissipation is limited to 150 mW. Derating is required above Ta = 25 °C, and thermal design must account for reverse leakage-induced self-heating at high VR.
Is the CST2 package of CTS521,L3F compatible with reflow soldering?
Yes, the CST2 package of CTS521,L3F is designed for standard Pb-free reflow soldering per J-STD-020. Its construction supports peak temperatures up to 260 °C for ≤10 seconds. However, due to its ultra-thin profile (0.40 mm), stencil aperture design and solder paste volume must be tightly controlled to prevent tombstoning or insufficient wetting on the anode/cathode pads.
CTS521,L3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- SOD-882
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 30 V
- Current - Average Rectified (Io):
- 200mA
- Voltage - Forward (Vf) (Max) @ If:
- 500 mV @ 200 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 30 µA @ 30 V
- Capacitance @ Vr, F:
- 25pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- CST2
- Operating Temperature - Junction:
- 125°C (Max)
CTS521,L3F FAQ
1.How can I place an order for CTS521,L3F through Aetrix?
Please submit a Request for Quotation (RFQ) for CTS521,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CTS521,L3F reliable?
The price and inventory of CTS521,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CTS521,L3F is usually 5 days.
3.What payment methods are accepted for CTS521,L3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CTS521,L3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CTS521,L3F?
CTS521,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CTS521,L3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CTS521,L3F?
For technical support, including CTS521,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CTS521,L3F requirements.
6.How does Aetrix verify that CTS521,L3F is sourced from the original manufacturer or authorized distributors?
All CTS521,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CTS521,L3F meets industry standards.
7.What is the process for return or replacement of CTS521,L3F?
All CTS521,L3F units undergo pre-shipment inspection (PSI). If there is an issue with CTS521,L3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CTS521,L3F part is unused and in its original packaging.
Return procedure for CTS521,L3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CTS521,L3F Tags

-
1N4448X-TP
Micro Commercial Co

-
1N4148WX-TP
Micro Commercial Co

-
1N4148TR
onsemi

-
MMSD4148T1G
onsemi

-
MMBD914LT3G
onsemi

-
BAS16HT1G
onsemi

-
1N914BWT
onsemi

-
BAS21LT1G
onsemi

-
LL4148
onsemi

-
BAS16LT1G
onsemi

-
MMSD914T1G
onsemi

-
BAV21W-7-F
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

