Toshiba Semiconductor and Storage CUHS15F30,H3F

Overview

CUHS15F30 from Toshiba Electronic Devices & Storage Corporation is a silicon epitaxial Schottky barrier diode optimized for high-speed switching applications, featuring 30 V reverse voltage rating, 1.5 A average rectified current, 10 A non-repetitive peak forward surge current, and low forward voltage drop (0.46 V max at 1.5 A). It is used in DC-DC converters and power supply output rectification where fast recovery and low conduction loss are critical.

For engineers reviewing the CUHS15F30 datasheet, CUHS15F30 pinout, CUHS15F30 application, or CUHS15F30 equivalent, key selection considerations include its US2H surface-mount package, thermal resistance of 105 °C/W (FR4 board), junction temperature limit of 150 °C, and reverse leakage behavior under high-voltage/high-temperature bias conditions.

Technical Context

This Schottky diode employs a planar silicon epitaxial structure to achieve fast switching with minimal reverse recovery charge. Its low VF (0.36–0.46 V typ. at 0.5–1.5 A) reduces forward conduction loss, while its 30 V VR rating targets low-voltage secondary-side rectification in buck and flyback topologies.

Thermal performance is defined under standardized FR4 mounting conditions (25.4 × 25.4 × 1.6 mm, 645 mm² Cu pad), with Rth(j-a) = 105 °C/W and Tj(max) = 150 °C. Reverse leakage (IR ≤ 50 µA at VR = 30 V) is higher than PN diodes but typical for Schottky devices-requiring careful thermal design to avoid runaway.

Key Specifications

Pinout & Package

CUHS15F30 is housed in the US2H surface-mount package (5.4 mg typical weight), a compact 2-pin SOD-323F variant with gull-wing leads. The package footprint is optimized for automated assembly and thermal performance on standard PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with RB055LAM-40 and SS12, CUHS15F30 provides optimal balance of 30 V blocking, 1.5 A current, and 105 °C/W thermal resistance in US2H-making it ideal for space-constrained 12 V power conversion where efficiency and reliability are prioritized over voltage headroom.

Availability

CUHS15F30 is available at Aetrix Electronics and suitable for DC-DC converter output rectification, USB power delivery circuits, and automotive body control modules requiring stable component supply and consistent parametric performance across production lots.

Supply support for CUHS15F30 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on efficiency, reliability, and miniaturization for industrial and consumer systems.

The CUHS15F30 belongs to Toshiba's high-speed Schottky diode product line, engineered specifically for low-voltage, high-current rectification in compact power supplies where thermal management and fast switching are critical.

FAQ

What is the maximum junction temperature for CUHS15F30?

The CUHS15F30 has a maximum junction temperature (Tj) of 150 °C, as specified in its absolute maximum ratings. This limit applies under continuous operation with proper PCB thermal design-specifically using an FR4 board with 25.4 × 25.4 × 1.6 mm dimensions and 645 mm² copper pad area. Exceeding this temperature risks accelerated degradation; derating per Toshiba's Reliability Handbook is recommended for long-term reliability.

Does CUHS15F30 have a specified reverse recovery time?

No, the CUHS15F30 datasheet does not specify reverse recovery time (trr) because it is a Schottky barrier diode, which operates via majority-carrier conduction and exhibits negligible reverse recovery charge. Instead, its fast switching behavior is confirmed by low capacitance (170 pF typ. at 0 V) and absence of recovery tails-making CUHS15F30 suitable for high-frequency (>500 kHz) switching applications without snubber circuits.

What is the marking code for CUHS15F30 on the US2H package?

The CUHS15F30 is marked with the code "8E" on the top surface of its US2H package, as shown in Figure 6.1 of the official Toshiba datasheet (Rev. 3.0.A). This 2-character marking uniquely identifies the CUHS15F30 variant and distinguishes it from other devices in the CUHS family, such as CUHS15F40 or CUHS20F30.

Can CUHS15F30 be used in automotive under-hood applications?

CUHS15F30 supports storage temperatures from –55 °C to +150 °C and has a 150 °C maximum junction temperature, but Toshiba explicitly states it is not intended for automotive safety-critical systems (e.g., engine control, braking). For non-safety BCM or lighting modules with ambient ≤105 °C and proper derating, CUHS15F30 may be used-however, qualification per AEC-Q101 is not claimed, and system-level validation remains the customer's responsibility.

What is the thermal resistance of CUHS15F30 when mounted on a standard FR4 board?

The junction-to-ambient thermal resistance (Rth(j-a)) of CUHS15F30 is 105 °C/W when mounted on a standard FR4 board measuring 25.4 mm × 25.4 mm × 1.6 mm with a 645 mm² copper pad, as defined in Note 1 of the Thermal Resistance Characteristic table. This value is measured under still-air conditions and forms the basis for thermal design calculations in real-world PCB layouts.