Toshiba Semiconductor and Storage CUHS15S30,H3F

Overview

CUHS15S30 from Toshiba Electronic Devices & Storage Corporation is a silicon epitaxial Schottky barrier diode optimized for high-speed switching in low-voltage DC/DC converters and power management circuits, with 30 V reverse voltage rating, 1.5 A average rectified current, 0.37 V forward voltage at 1.5 A, and US2H surface-mount package.

For engineers reviewing the CUHS15S30 datasheet, CUHS15S30 pinout, CUHS15S30 application, or CUHS15S30 equivalent, key selection considerations include thermal resistance (105 °C/W), reverse leakage (500 µA at 30 V), junction temperature limit (150 °C), and US2H footprint compatibility in space-constrained power stages.

Technical Context

This Schottky diode uses a low-barrier silicon epitaxial structure to minimize forward conduction loss while maintaining fast recovery characteristics essential for high-frequency switching topologies. Its 10 A non-repetitive surge rating supports transient load conditions in buck and boost converters.

The device exhibits typical capacitance of 200 pF at 0 V and 1 MHz, enabling stable operation in noise-sensitive applications; thermal design must account for its 105 °C/W junction-to-ambient resistance on standard FR4 PCBs with 645 mm² copper pad.

Key Specifications

Pinout & Package

Package: US2H - ultra-small surface-mount package (5.4 mg typical weight), dimensions per Toshiba spec, suitable for automated assembly and high-density layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with RB055LAM-40 and SS12, the CUHS15S30 uniquely balances 30 V VR, 1.5 A IO, and US2H compactness-enabling higher-power density in space-limited buck converters without sacrificing thermal margin or leakage control.

Availability

CUHS15S30 is available at Aetrix Electronics and suitable for DC/DC converters, USB power delivery interfaces, industrial sensor power rails, and LED driver snubbers requiring stable component supply and consistent parametric performance across production batches.

Supply support for CUHS15S30 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and miniaturization.

The CUHS15S30 belongs to Toshiba's high-speed Schottky diode product line, engineered specifically for low-loss, high-frequency power conversion in compact consumer, industrial, and automotive-qualified systems.

FAQ

What is the maximum junction temperature for the CUHS15S30?

The CUHS15S30 has a maximum junction temperature (Tj) rating of 150 °C. This limit must not be exceeded during operation to maintain reliability and prevent accelerated degradation. Thermal design should use the specified 105 °C/W junction-to-ambient thermal resistance on an FR4 board with 645 mm² copper pad to calculate allowable power dissipation. The CUHS15S30 datasheet confirms this value under Absolute Maximum Ratings.

Does the CUHS15S30 have a documented pinout, and how is it configured?

Yes, the CUHS15S30 has a confirmed two-terminal pinout in the US2H package: Pin 1 is the cathode and Pin 2 is the anode. This configuration is explicitly defined in Toshiba's official documentation under "Packaging and Internal Circuit." The CUHS15S30 marking code "8D" aligns with this terminal assignment, and the device operates as a unidirectional rectifier with conventional Schottky polarity.

What is the forward voltage of the CUHS15S30 at 1.5 A, and why does it matter?

The CUHS15S30 has a maximum forward voltage (VF) of 0.37 V at 1.5 A and 25 °C, per its Electrical Characteristics table. This low VF directly reduces conduction loss (P = VF × IO), improving power stage efficiency and lowering thermal stress. In a 1.5 A buck converter, this translates to ≤0.56 W dissipation-critical for thermally constrained layouts where the CUHS15S30 is commonly deployed.

Can the CUHS15S30 replace standard PN-junction diodes in high-frequency applications?

Yes, the CUHS15S30 is specifically designed to replace slower PN diodes in high-frequency switching applications such as DC/DC converters. Its Schottky construction eliminates minority-carrier storage delay, enabling near-zero reverse recovery time. Unlike PN diodes, the CUHS15S30 avoids switching losses associated with reverse recovery charge-making it suitable for >500 kHz topologies where the CUHS15S30 delivers measurable efficiency gains.

Is the CUHS15S30 RoHS compliant and lead-free?

Yes, the CUHS15S30 is RoHS compliant and lead-free, as confirmed by Toshiba's environmental compliance documentation and product markings. It meets EU Directive 2011/65/EU requirements and contains no restricted substances above threshold limits. For full material declarations and test reports, refer to Toshiba's official environmental data portal-where the CUHS15S30 is listed with full substance disclosure and conformity statements.