Toshiba Semiconductor and Storage CUS357,H3F

Overview

CUS357,H3F from Toshiba Electronic Devices & Storage Corporation is a silicon epitaxial Schottky barrier diode optimized for high-speed switching in compact power management circuits, featuring VF(3) = 0.54 V (typ.), IR(1) = 1 µA (max) at VR = 10 V, and 40 V reverse voltage rating, widely deployed in automotive body control modules and portable DC-DC converters.

For engineers reviewing the CUS357,H3F datasheet, CUS357,H3F pinout, CUS357,H3F application, or CUS357,H3F equivalent, key selection criteria include low forward voltage under 100 mA load, AEC-Q101 qualification status, USC (SOD-323/SC-76) package compatibility, thermal derating guidance, and reverse leakage behavior at elevated junction temperatures.

Technical Context

This Schottky diode leverages a silicon epitaxial structure to achieve fast recovery with negligible minority-carrier storage, enabling operation up to several MHz in flyback and synchronous rectifier topologies. Its low VF(3) = 0.54 V at IF = 100 mA directly reduces conduction loss in 3.3 V–12 V input DC-DC stages.

The device exhibits IR(2) = 5 µA max at VR = 40 V and Ta = 25 °C, with junction temperature limited to 125 °C and storage range from –55 °C to +125 °C - parameters critical for under-hood automotive environments where thermal runaway risk must be mitigated per Toshiba's usage considerations.

Key Specifications

Pinout & Package

Package: USC (TOSHIBA 1-1E1S), equivalent to JEDEC SOD-323 and IEC SC-76 - surface-mount, 2-pin, 1.25 mm × 0.85 mm footprint, 4.5 mg typical weight.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with RB521S-40T1G and NSR0230HT1G, the CUS357,H3F offers AEC-Q101 qualification at the cost of slightly higher VF and IR - making it the preferred choice for automotive-grade designs where reliability validation outweighs marginal efficiency gains.

Availability

CUS357,H3F is available at Aetrix Electronics and suitable for automotive body electronics, portable power delivery systems, and industrial sensor nodes requiring stable component supply across multi-year production cycles.

Supply support for CUS357,H3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on automotive, industrial, and consumer applications.

The CUS357,H3F belongs to Toshiba's USC-packaged Schottky diode product line, engineered specifically for high-reliability, space-constrained automotive power management where AEC-Q101 compliance and thermal robustness are mandatory.

FAQ

Is the CUS357,H3F AEC-Q101 qualified?

Yes, the CUS357,H3F is AEC-Q101 qualified per the official Toshiba datasheet Rev. 4.0.A. This qualification covers stress testing for temperature cycling, humidity bias, and high-temperature operating life - confirming suitability for automotive body electronics and infotainment power supplies. The CUS357,H3F meets Grade 2 temperature requirements (–40 °C to +125 °C junction).

What is the forward voltage of the CUS357,H3F at 100 mA?

The CUS357,H3F has a typical forward voltage of 0.54 V at IF = 100 mA and Ta = 25 °C, as specified in Toshiba's Electrical Characteristics table. This value is measured under pulsed conditions and represents the conduction loss baseline used in efficiency calculations for buck and boost converters where the CUS357,H3F serves as output rectifier or freewheeling diode.

Does the CUS357,H3F have the same footprint as SOD-323?

Yes, the CUS357,H3F uses the USC package, which Toshiba explicitly states is equivalent to SOD-323 and SC-76. Its land pattern dimensions match JEDEC SOD-323 standards (1.25 mm × 0.85 mm), allowing direct PCB footprint reuse without modification - confirmed in Toshiba's Package Dimensions and Land Pattern Dimensions sections.

What is the maximum reverse current for the CUS357,H3F at 10 V?

The CUS357,H3F specifies a maximum reverse current of 1 µA at VR = 10 V and Ta = 25 °C (IR(1) parameter). This value is guaranteed across production lots and forms the basis for low-leakage design in always-on circuits such as battery monitoring or wake-up detection paths where the CUS357,H3F operates in reverse-biased mode.

Can the CUS357,H3F replace a standard PN junction diode in high-frequency switching?

Yes, the CUS357,H3F is specifically designed for high-speed switching applications due to its Schottky barrier construction, which eliminates minority-carrier storage delay. With typical total capacitance of 5 pF at VR = 0 V and f = 1 MHz, the CUS357,H3F supports clean switching up to 1 MHz in DC-DC converters - outperforming standard PN diodes that exhibit slower recovery and higher switching losses.