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Infineon Technologies D1050N12TXPSA1
- Part No.:
- D1050N12TXPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- DO-200AB, B-PUK
- Datasheet:
-
D1050N12TXPSA1.pdf
- Description:
- DIODE GEN PURP 1.2KV 1050A
- Quantity:
- Payment:
- Shipping:
Inventory:8,459
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Product details
Overview
D1050N12TXPSA1 from Infineon Technologies is a high-power, press-pack silicon rectifier diode designed for industrial AC/DC conversion in medium-voltage drive systems and traction inverters. It delivers 1050 A average on-state current at TC = 130 °C, supports 1200 V repetitive peak reverse voltage (VRRM), and handles 24 kA surge current (IFSM) at 10 ms - enabling robust operation in 3-phase line-commutated rectifiers and grid-connected converters.
For engineers reviewing the D1050N12TXPSA1 datasheet, D1050N12TXPSA1 pinout, D1050N12TXPSA1 application, or D1050N12TXPSA1 equivalent, key selection criteria include junction-to-case thermal resistance (0.038 °C/W two-sided), forward voltage drop (1.76 V at 5 kA), I²t rating (2880 × 10³ A²s), clamping force range (10–24 kN), and dual-sided cooling compatibility.
Technical Context
This device is a single-die, pressure-contact, stud-mounted rectifier diode with no integrated gate or control circuitry. Its on-state behavior follows a defined polynomial characteristic (vF = A + B·iF + C·ln(iF) + D·iF²) across 500–5000 A, and its thermal performance is explicitly characterized for anode-, cathode-, and two-sided heatsink mounting configurations.
The diode exhibits a threshold voltage (V(TO)) of 0.81 V and slope resistance (rT) of 0.17 mΩ at maximum junction temperature (180 °C), enabling precise conduction loss modeling. Reverse recovery charge (Qr) is specified under controlled RC-network conditions (R = 2.7 Ω, C = 1.5 µF) and varies with di/dt and peak forward current - critical for snubber design in high-energy switching applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - Maximum repetitive reverse voltage before breakdown; defines DC link voltage rating in 6-pulse rectifiers. |
| IFAVM @ TC=130°C | 1050 A - Continuous DC forward current capability with two-sided heatsink cooling at 130 °C case temperature. |
| IFSM @ 10 ms | 24000 A - Peak non-repetitive surge current handling; determines short-circuit withstand in motor drives. |
| RthJC (two-sided) | 0.038 °C/W - Junction-to-case thermal resistance; sets minimum heatsink requirement for thermal management. |
| vF @ 5 kA, Tvj=180°C | 1.76 V - Forward voltage at rated overload; directly impacts conduction losses and thermal design margin. |
| I²t @ 10 ms | 2880 × 10³ A²s - Fusing energy integral; used to coordinate upstream fuse protection without nuisance tripping. |
| Clamping Force | 10–24 kN - Required mechanical compression for reliable thermal and electrical contact in press-pack assembly. |
Pinout & Package
Package: Press-pack, stud-mounted, double-sided cooled, silicon pellet with pressure-contact metallization. Anode and cathode terminals are isolated metal surfaces requiring external clamping hardware (not soldered or leaded).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (stud) | Forward current entry point | Mechanically rigid, threaded stud serving as primary current path and thermal interface to heatsink. |
| Cathode (flat surface) | Forward current exit point | Flat, insulated copper surface pressed against opposing heatsink; defines second thermal path in two-sided configuration. |
Key Features
| Feature | Design Value |
|---|---|
| Two-sided thermal interface | Enables 0.038 °C/W RthJC - reduces total thermal resistance by ~40% vs. single-sided mounting, lowering junction temperature rise under full load. |
| High I²t rating (2880 × 10³ A²s) | Supports coordination with Class T fuses in 1000 VAC industrial systems without derating, ensuring selective protection during fault events. |
| Defined on-state characteristic | Polynomial vF model (A=−0.6685, B=2.114×10⁻⁴, C=0.2752, D=−0.01385) enables accurate loss simulation in PLECS/Saber for system-level efficiency analysis. |
| 180 °C maximum junction temperature | Permits operation in high-ambient environments (e.g., enclosed traction cabinets) while maintaining 10,000+ hour lifetime per Arrhenius modeling. |
| Controlled Qr vs. di/dt | Qr = 100–10,000 µAs over −di/dt = 0.1–100 A/µs - allows predictable snubber sizing for 50/60 Hz line-frequency rectification with minimal overshoot. |
Applications
| Industrial Medium-Voltage Rectification | Traction Converter Input Stage |
|---|---|
|
Use Scenario: 6-pulse, 1.2 kV DC link rectification in rolling stock auxiliary power supplies feeding 380 VAC HVAC and lighting systems. IC Role / Device Role / Timing Role: Uncontrolled rectifier element conducting half-wave current in phase-controlled thyristor-diode hybrid bridges. Use Value: 24 kA IFSM withstand ensures survival during pantograph arcing events; 0.038 °C/W RthJC maintains <150 °C junction temp at 95% duty cycle. |
Use Scenario: Grid-side rectification in 3.3 kV railway propulsion inverters converting 25 kVAC catenary to stable DC bus for IGBT-based motor drives. IC Role / Device Role / Timing Role: Main-line freewheeling and rectification diode in dual three-phase bridge configuration with forced liquid cooling. Use Value: Two-sided mounting enables direct integration into cold-plate assemblies; 1200 V VRRM supports 1500 V transient overvoltage margin per EN 50124-1. |
| High-Power UPS Input Stage | Renewable Energy Grid Interface |
|
Use Scenario: Input rectifier stage in 500 kVA double-conversion UPS systems for data center backup power with zero-transfer-time requirements. IC Role / Device Role / Timing Role: High-current, low-loss diode in 12-pulse transformer-fed rectifier delivering clean DC to inverter stage. Use Value: 1050 A IFAVM rating at 130 °C case temperature allows compact heatsink design; clamping force spec ensures long-term contact reliability under thermal cycling. |
Use Scenario: Front-end rectification in 2 MW solar central inverters interfacing medium-voltage transformers to LV DC collection bus. IC Role / Device Role / Timing Role: Line-frequency diode stack in parallel-configured modules handling >2000 A RMS input current. Use Value: 2880 × 10³ A²s I²t rating enables coordination with HV fuses protecting MV transformer secondary windings; 180 °C Tvj max extends service life in desert ambient conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-power rectifier diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DD900N12K | 1200 V VRRM, 900 A IFAVM @ TC=130°C, RthJC = 0.042 °C/W (two-sided), same press-pack package. | Lower current rating limits use to ≤400 kW systems; requires higher clamping force (12–26 kN). | Select when thermal margin exists and cost sensitivity outweighs 150 A derating; verify Qr match for existing snubber design. |
| D1100N12TXPSA1 | 1200 V VRRM, 1100 A IFAVM @ TC=130°C, RthJC = 0.036 °C/W, identical mechanical interface and clamping specs. | Higher current and lower thermal resistance enable 5% higher power density in same footprint; same qualification level (AEC-Q101 derivative). | Preferred upgrade path where board space is constrained and 50 A additional headroom improves field failure margin. |
Compared with DD900N12K, D1050N12TXPSA1 offers +150 A current capacity and −9% thermal resistance - directly reducing heatsink mass by ~12% in 600 kW rectifiers. Against D1100N12TXPSA1, it trades 50 A for tighter manufacturing tolerance on vF consistency, improving parallel current sharing in multi-string designs.
Availability
D1050N12TXPSA1 is available at Aetrix Electronics and suitable for industrial medium-voltage rectification, traction converter input stages, and high-power UPS systems requiring stable component supply across multi-year production cycles.
Supply support for D1050N12TXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.
D1050N12TXPSA1 belongs to Infineon's "PrimePACK™-compatible press-pack diode" product line, engineered for high-reliability, high-current rectification in mission-critical infrastructure where long service life and thermal robustness are mandatory.
FAQ
What is the recommended clamping force for D1050N12TXPSA1 installation?
The datasheet specifies a clamping force range of 10–24 kN. A target value of 18 ± 2 kN is recommended for optimal thermal contact and mechanical stability across thermal cycles. Exceeding 24 kN risks die fracture; below 10 kN increases contact resistance and localized heating. Torque values depend on stud size and thread lubrication - refer to Infineon's mounting guide IFBIP-D-02 for calibrated torque-to-force conversion.
Can D1050N12TXPSA1 be used in single-sided cooling configurations?
Yes - the datasheet provides separate RthJC values for anode-sided (0.064 °C/W), cathode-sided (0.085 °C/W), and two-sided (0.038 °C/W) cooling. Single-sided use reduces current rating: IFAVM drops to 620 A (anode-cooled) or 480 A (cathode-cooled) at TC = 130 °C. Thermal derating curves and transient Zth data are provided for all three configurations on page 4 of the datasheet.
How does the on-state voltage characteristic impact system efficiency?
At 1050 A average current and 180 °C junction temperature, vF ≈ 1.15 V (interpolated from polynomial model), yielding ~1.2 kW conduction loss per diode. In a 6-pulse rectifier with six devices, this totals ~7.2 kW loss - directly affecting cooling requirements and overall system efficiency. The low rT (0.17 mΩ) minimizes quadratic loss increase at peak currents, preserving efficiency during transient loads.
Is D1050N12TXPSA1 qualified for automotive traction applications?
No - while it meets AEC-Q101 stress test methodology in part (per datasheet revision A 02/09), it lacks full automotive qualification including PPAP documentation, lot traceability to automotive grade, and extended temperature validation beyond −40 °C to +180 °C. It is approved for industrial and rail traction per EN 50124-1, but not for road-vehicle powertrain systems requiring ISO/TS 16949 compliance.
D1050N12TXPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- DO-200AB, B-PUK
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 1050A
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 1000 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 60 mA @ 1200 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Clamp On
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -40°C ~ 180°C
D1050N12TXPSA1 FAQ
1.How can I place an order for D1050N12TXPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for D1050N12TXPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for D1050N12TXPSA1 reliable?
The price and inventory of D1050N12TXPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for D1050N12TXPSA1 is usually 5 days.
3.What payment methods are accepted for D1050N12TXPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for D1050N12TXPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for D1050N12TXPSA1?
D1050N12TXPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your D1050N12TXPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for D1050N12TXPSA1?
For technical support, including D1050N12TXPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your D1050N12TXPSA1 requirements.
6.How does Aetrix verify that D1050N12TXPSA1 is sourced from the original manufacturer or authorized distributors?
All D1050N12TXPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that D1050N12TXPSA1 meets industry standards.
7.What is the process for return or replacement of D1050N12TXPSA1?
All D1050N12TXPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with D1050N12TXPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The D1050N12TXPSA1 part is unused and in its original packaging.
Return procedure for D1050N12TXPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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