Infineon Technologies D1800N36TVFXPSA1

Overview

D1800N36TVFXPSA1 from Infineon Technologies is a high-power, press-pack silicon rectifier diode designed for industrial AC/DC conversion in medium- to high-voltage traction and grid applications. It delivers 1800 A average on-state current at 100 °C case temperature, supports 3600 V repetitive peak reverse voltage, and withstands 35 kA surge current (10 ms, T_vj = 25 °C), operating up to 160 °C junction temperature.

For engineers reviewing the D1800N36TVFXPSA1 datasheet, D1800N36TVFXPSA1 pinout, D1800N36TVFXPSA1 application, or D1800N36TVFXPSA1 equivalent, key selection criteria include RMS on-state current rating (4000 A), thermal resistance (0.0169 °C/W, two-sided cooling), forward voltage drop (2.82 V at 7.4 kA), and pressure-contact mechanical interface requirements.

Technical Context

This device is a unidirectional, non-controlled, planar-diffused silicon power diode with pressure-contact packaging-no soldered leads or molded case. Its conduction behavior follows a defined on-state characteristic equation (v_F = A + B·i_F + C·ln(i_F) + D·i_F·ln(i_F)) with coefficients validated at T_vj = 160 °C.

Thermal performance is defined by transient junction-to-case impedance (Z_thJC) with analytical RC network modeling across six time constants, supporting both two-sided and single-sided (anode- or cathode-only) heatsink mounting configurations under DC, sinusoidal, and rectangular conduction angles (30°–180°).

Key Specifications

Pinout & Package

Package: Press-pack, double-side cooled, stud-mount diode with isolated anode and cathode metal terminals (see datasheet page 3). Requires controlled clamping force of 24–60 kN and thermal interface material for reliable thermal transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power rectifier diode applications.

Compared with DD900N36K and SKKT 1000/36, D1800N36TVFXPSA1 offers superior thermal efficiency (0.0169 °C/W), higher surge margin (35 kA vs. ≤25 kA), and verified analytical thermal modeling-critical for predictive lifetime estimation in mission-critical infrastructure.

Availability

D1800N36TVFXPSA1 is available at Aetrix Electronics and suitable for railway traction converters, industrial HVDC rectification, and medium-voltage drive systems requiring stable component supply, long-term obsolescence management, and traceable lot-level qualification.

Supply support for D1800N36TVFXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This part belongs to Infineon's "Press-Pack Diodes" product line, engineered for ultra-high-current, high-voltage rectification in utility-scale power conversion where reliability, thermal predictability, and field serviceability are mandatory.

FAQ

What clamping force is required for reliable thermal and electrical contact?

The D1800N36TVFXPSA1 requires a controlled mechanical clamping force between 24 kN and 60 kN, applied uniformly across the anode and cathode studs. Under-torque risks interfacial hotspots and premature failure; over-torque may deform the silicon pellet or housing. Use calibrated hydraulic tools and follow Infineon's mounting procedure (document A41/08) with thermal interface material certified for >160 °C operation.

Can this diode be used in forced-air cooled systems?

No-this device is not rated for forced-air cooling. Its thermal specifications assume direct metal-to-metal contact with a heatsink using two-sided or single-sided mounting. Forced-air cooling introduces uncontrolled thermal gradients and insufficient heat extraction for its 4000 A RMS rating. Liquid cooling or high-mass conductive baseplates with thermal interface materials are mandatory per datasheet section "Thermische Eigenschaften".

Is the recovery charge (Q_r) specified at standard test conditions?

Yes-Q_r is measured at T_vj = 160 °C, v_R ≤ 0.5 V_RRM, v_RM = 0.8 V_RRM, with an RC network (R = 2.7 Ω, C = 1.5 µF) and variable -di/dt from 100 A/µs to 1000 A/µs. Measured values range from 100 µAs (low -di/dt) to 100,000 µAs (high -di/dt), as shown in Figure 7 of the datasheet.

Does this diode support paralleling for higher current capacity?

Yes-but only with strict matching and layout symmetry. Parallel operation requires matched devices from the same manufacturing lot, identical thermal paths (equal R_thCH), and symmetrical busbar inductance (<5 nH difference per branch). Infineon recommends active current balancing via gate-controlled thyristors or external current-sharing reactors for >2-device parallel strings.