Infineon Technologies D2450N07TXPSA1

Overview

D2450N07TXPSA1 from Infineon Technologies is a high-power, press-pack silicon rectifier diode designed for industrial AC/DC conversion in medium-voltage drive systems and traction inverters. It delivers 2450 A average on-state current at 100 °C case temperature, 4000 A RMS on-state current, and 400 V repetitive peak reverse voltage - enabling robust operation in 3-phase bridge rectification for rail propulsion and grid-connected energy storage converters.

For engineers reviewing the D2450N07TXPSA1 datasheet, D2450N07TXPSA1 pinout, D2450N07TXPSA1 application, or D2450N07TXPSA1 equivalent, key selection criteria include junction-to-case thermal resistance (0.0253 °C/W two-sided), surge current rating (33 kA @ 10 ms), on-state voltage (1.5 V @ 7.7 kA), and pressure-contact mechanical interface compatibility with standard heatsink mounting.

Technical Context

This device operates as a unidirectional, non-controlled power rectifier with no gate control or switching function. Its conduction behavior follows a defined on-state characteristic (v_F = A + B·i_F + C·ln(i_F) + D·i_F²) with parameters A=1.154, B=3.499×10⁻⁵, C=−0.1228, D=0.01338 at T_vj = 180 °C.

Thermal performance is highly dependent on cooling configuration: two-sided cooling yields the lowest R_thJC (0.0253 °C/W), while anode- or cathode-side-only cooling increases it to 0.0414–0.0614 °C/W. Transient thermal impedance data supports pulse-load derating analysis for short-duration overload events up to 50 Hz half-wave sequences.

Key Specifications

Pinout & Package

Package: Press-pack, double-sided cooled, stud-mounted silicon rectifier diode with isolated anode and cathode terminals. Requires clamping force of 12–24 kN for reliable thermal and electrical contact.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current rectifier applications.

Compared with D2450N07TXPSA1, DD400S40K2 trades higher conduction loss for greater average current headroom, while D2500N06TXPSA1 offers 200 V higher reverse rating with improved forward voltage - making it preferable in 600 V AC mains-fed industrial drives where voltage transients exceed 400 V.

Availability

D2450N07TXPSA1 is available at Aetrix Electronics and suitable for rail traction rectifiers, industrial medium-voltage drives, and grid-scale energy storage converters requiring stable component supply across long production lifecycles.

Supply support for D2450N07TXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

D2450N07TXPSA1 belongs to Infineon's IFBIP high-power press-pack diode product line, engineered for reliability in high-current, high-temperature industrial rectification and traction applications where thermal stability and surge robustness are critical.

FAQ

What is the recommended clamping force for D2450N07TXPSA1 installation?

The datasheet specifies a clamping force range of 12–24 kN to ensure low contact resistance and optimal thermal transfer between the diode's pressure-contact surfaces and the heatsink. Exceeding 24 kN risks ceramic insulator fracture, while forces below 12 kN increase R_thCH and may cause localized overheating at the anode/cathode interfaces.

Can D2450N07TXPSA1 be used in single-sided cooling configurations?

Yes, but with significant derating: R_thJC rises to 0.0414 °C/W (anode-side) or 0.0614 °C/W (cathode-side), reducing I_FAVM by ~35–50% depending on thermal interface quality. The datasheet provides explicit derating curves for both configurations, and transient thermal models confirm reduced pulse-handling capability.

Does D2450N07TXPSA1 have a specified reverse recovery charge (Q_r)?

Yes - Q_r is characterized at T_vj = 180 °C, v_R ≤ 0.5 V_RRM, and v_RM = 0.8 V_RRM, ranging from 100 µAs (at 50 A) to 10,000 µAs (at 1600 A) depending on -di/dt (100–10,000 A/µs). The Q_r vs. -di/dt curve is provided on page 7 of the datasheet for snubber design.

Is D2450N07TXPSA1 AEC-Q101 qualified?

No - this part is not AEC-Q101 qualified. It is designed and tested for industrial and traction applications per Infineon's internal IFBIP standards, with qualification including 1000-cycle thermal cycling (-40 °C to +180 °C), 1000-hour high-temperature storage, and mechanical vibration testing at 50 Hz / 50 m/s². Automotive qualification requires additional stress tests and documentation not performed for this variant.