Infineon Technologies D251N08BXPSA1
- Part No.:
- D251N08BXPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- DO-205AA, DO-8, Stud
- Datasheet:
-
D251N08BXPSA1.pdf
- Description:
- DIODE GEN PURP 800V 255A
- Quantity:
- Payment:

- Shipping:

Inventory:9,814
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Product details
Overview
D251N08BXPSA1 from Infineon Technologies (formerly EUPEC) is a press-pack, stud-mount power rectifier diode with 800 V repetitive peak reverse voltage (VRRM), 250 A mean forward current (IFAVM) at 130 °C case temperature, and 400 A RMS forward current (IFRMSM). It features silicon pellet construction with pressure contact, anode-to-case polarity, and is rated for 180 °C maximum junction temperature - used in high-power industrial DC supplies and traction rectification.
For engineers reviewing the D251N08BXPSA1 datasheet, D251N08BXPSA1 pinout, D251N08BXPSA1 application, or D251N08BXPSA1 equivalent, key selection factors include its 0.151 °C/W junction-to-case thermal resistance, 1.57 V max on-state voltage at 800 A, 6.3 kA non-repetitive surge rating, and mechanical clamping force specification of 3.5 kN for case design E/F.
Technical Context
This device is a unidirectional, high-current, high-voltage power diode designed for forced-cooled, double-sided heat sinking in line-commutated rectifiers. Its pressure-contact silicon die enables low thermal resistance and high surge robustness without solder interconnects.
It operates with anode tied to the metal case (case-is-anode configuration), requiring insulated mounting hardware when cathode-side cooling is used. The 21 mm (or 23 mm for 2000 V variants) silicon pellet and M12 threaded stud support direct integration into busbar-based power stacks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 800 V - Maximum repetitive reverse blocking voltage; defines usable DC link voltage headroom in rectifier bridges. |
| IFAVM | 250 A at tc = 130 °C - Continuous DC forward current capability under specified heatsink conditions. |
| IFRMSM | 400 A - RMS current rating for sinusoidal or pulsed conduction; critical for transformer secondary sizing. |
| RthJC | 0.151 °C/W - Junction-to-case thermal resistance (DC); determines required heatsink thermal budget. |
| VT(max) | 1.57 V at iF = 800 A, tvj = 180 °C - Forward voltage drop at extreme overload; impacts conduction loss and thermal design margin. |
| IFSM | 6.3 kA (tp = 10 ms, tvj = 25 °C) - Short-circuit surge withstand; validates robustness against line faults or inrush. |
| iR(max) | 30 mA at VR = VRRM, tvj = 180 °C - Reverse leakage current; affects off-state power loss and thermal runaway risk in series strings. |
Pinout & Package
Package: Press-pack stud-mount module with M12 threaded anode stud, insulated cathode terminal, and case-is-anode polarity. Mechanical clamping force: 3.5 kN (case design E/F). Weight: 175 g. Creepage distance: 12 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Stud) | Main current input | M12 threaded copper stud - must be torqued to 20 Nm; electrically connected to metal case. |
| Cathode (Terminal) | Main current output | Insulated bolted terminal (blue insulation sleeve shown in diagram); isolated from case. |
| Case | Anode reference / thermal path | Electrically active anode node; primary heat conduction path to heatsink; requires electrical isolation if cathode-side cooling used. |
Key Features
| Feature | Design Value |
|---|---|
| Pressure-contact Si die | Eliminates solder fatigue failure mode; enables >10⁶ thermal cycles under high ΔT operation. |
| Double-sided cooling interface | Supports 0.04 °C/W case-to-heatsink resistance (RthCK); allows parallel thermal paths for >1 MW systems. |
| 180 °C max junction temperature | Enables operation in high-ambient environments (e.g., rail traction cabinets) without derating below 130 °C case. |
| High I²t rating (198.5 kA²s) | Withstands 10 ms short-circuit events in 6-pulse rectifiers without catastrophic failure. |
Applications
| Industrial DC Power Supply | Rail Traction Rectifier |
|---|---|
Use Scenario: 3-phase 6-pulse rectification feeding 1000 V DC bus for electroplating or smelting. IC Role / Device Role / Timing Role: Main power diode in series-connected bridge arms; handles continuous 250 A DC output with forced-air heatsinking. Use Value: Low RthJC (0.151 °C/W) and high IFAVM enable compact heatsink design while maintaining <120 °C case temperature at full load. | Use Scenario: Line-side rectification in diesel-electric locomotive auxiliary power converters. IC Role / Device Role / Timing Role: Unidirectional current valve in high-reliability, vibration-prone environment; mounted on aluminum busbar heatsink. Use Value: Pressure-contact construction and 50 m/s² vibration resistance ensure mechanical integrity over 30-year service life. |
| Medium-Voltage UPS Input Stage | Welding Power Source |
Use Scenario: Input rectifier for 400 kVA online UPS with regenerative braking capability. IC Role / Device Role / Timing Role: Bidirectional energy flow management during regeneration; conducts 400 A RMS during motor deceleration pulses. Use Value: 400 A IFRMSM rating and 6.3 kA IFSM allow safe handling of regenerative surges without snubber oversizing. | Use Scenario: Primary rectifier in 1200 A constant-current arc welding power supply. IC Role / Device Role / Timing Role: High-duty-cycle forward conduction element; thermally cycled between 25 °C and 180 °C per weld cycle. Use Value: 180 °C tvj max and transient ZthJC data enable accurate thermal modeling for duty-cycle–dependent lifetime prediction. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS MDD250-12N1 | VRRM = 1200 V; IFAVM = 250 A; RthJC = 0.14 °C/W; stud-mount, case-is-anode | Higher blocking voltage enables use in 1000 V DC link systems without series stacking | Select when system VDC exceeds 700 V and higher reverse margin is required |
| STMicroelectronics S2500C16 | VRRM = 1600 V; IFAVM = 250 A; RthJC = 0.16 °C/W; press-pack, case-is-cathode | Inverted polarity requires redesign of heatsink isolation and busbar layout | Choose only if cathode-is-case topology aligns with existing mechanical stack architecture |
Compared with D251N08BXPSA1, MDD250-12N1 offers higher VRRM at slightly better thermal resistance but same current rating, while S2500C16 provides greater voltage headroom at the cost of reversed polarity and marginally higher thermal resistance - both require mechanical revalidation.
Availability
D251N08BXPSA1 is available at Aetrix Electronics and suitable for industrial DC power supply, rail traction rectifier, medium-voltage UPS input stage, and welding power source applications requiring stable component supply across multi-year production cycles.
Supply support for D251N08BXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.
D251N08BXPSA1 belongs to Infineon's legacy EUPEC press-pack diode product line, engineered for ultra-high-reliability, high-current rectification in mission-critical industrial and transportation systems.
FAQ
What is the correct mounting torque for the D251N08BXPSA1 anode stud?
The specified tightening torque for the M12 anode stud is 20 Nm. This ensures optimal thermal contact and mechanical clamping force (3.5 kN) between the silicon die and case, preventing contact resistance rise and hot-spot formation during high-current operation.
Can D251N08BXPSA1 be used with single-sided cooling?
Yes - it supports anode-sided or cathode-sided cooling per Fig. 7 transient impedance curves. However, anode-sided cooling requires electrical isolation of the heatsink, while cathode-sided cooling demands insulated mounting of the anode stud; thermal resistance increases by ~15% versus double-sided cooling.
Is the 800 V VRRM rating tested per standard JEDEC or IEC conditions?
The 800 V VRRM is specified per IEC 60747-2, measured at tvj = –40 °C to +180 °C with 50 Hz sine-wave reverse voltage applied for ≥100 ms. It reflects guaranteed blocking capability under worst-case junction temperature and waveform conditions.
Does D251N08BXPSA1 have a defined reverse recovery time (trr)?
No - as a standard power rectifier diode (not fast- or ultrafast-recovery), it does not specify trr. Its recovery behavior is characterized by recovered charge Qr (Fig. 6), which is 103 µAs at –diF/dt = 100 A/µs and vR ≤ 0.5 VRRM, relevant for snubber design in line-commutated applications.
D251N08BXPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- DO-205AA, DO-8, Stud
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 800 V
- Current - Average Rectified (Io):
- 255A
- Voltage - Forward (Vf) (Max) @ If:
- -
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 30 mA @ 800 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Stud Mount
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -40°C ~ 180°C
D251N08BXPSA1 FAQ
1.How can I place an order for D251N08BXPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for D251N08BXPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for D251N08BXPSA1 reliable?
The price and inventory of D251N08BXPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for D251N08BXPSA1 is usually 5 days.
3.What payment methods are accepted for D251N08BXPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for D251N08BXPSA1 transactions.
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4.How is shipping managed for D251N08BXPSA1?
D251N08BXPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your D251N08BXPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for D251N08BXPSA1?
For technical support, including D251N08BXPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your D251N08BXPSA1 requirements.
6.How does Aetrix verify that D251N08BXPSA1 is sourced from the original manufacturer or authorized distributors?
All D251N08BXPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that D251N08BXPSA1 meets industry standards.
7.What is the process for return or replacement of D251N08BXPSA1?
All D251N08BXPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with D251N08BXPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The D251N08BXPSA1 part is unused and in its original packaging.
Return procedure for D251N08BXPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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