Taiwan Semiconductor Corporation D2SB10

Overview

D2SB10 from Taiwan Semiconductor is a 2A, 100V repetitive peak reverse voltage (V_RRM) standard quad bridge rectifier in GBL package, featuring 80A surge capability and 150°C max junction temperature - used in AC/DC front-end stages of compact switching mode power supplies.

For engineers reviewing the D2SB10 datasheet, D2SB10 pinout, D2SB10 application, or D2SB10 equivalent, key selection criteria include V_RRM=100V, I_F=2A, I_FSM=80A, R_θJL=10°C/W, and AEC-Q101 qualification availability (D2SB10H variant).

Technical Context

The D2SB10 integrates four silicon diodes in a single-phase bridge configuration with common-cathode/common-anode topology. Its GBL package enables surface-mount assembly on PCBs while maintaining 2.00g mass and UL 94V-0 flammability compliance.

Rated for continuous 2A forward current at 150°C junction temperature, it delivers 1.1V max forward voltage per diode at 2A/25°C and limits reverse leakage to 10µA at 25°C and 500µA at 125°C under rated reverse voltage.

Key Specifications

Pinout & Package

Package: GBL - molded plastic body with matte tin-plated leads, UL 94V-0 rated, 2.00g weight, polarity marked on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bridge rectifier applications.

Compared with GBU2K and GBU2A, the D2SB10 offers superior thermal performance (R_θJL=10°C/W vs. ~15°C/W) and optional AEC-Q101 qualification - making it preferred for high-density, thermally demanding, or automotive-adjacent power supplies.

Availability

D2SB10 is available at Aetrix Electronics and suitable for switching mode power supplies, AC/DC adapters, and LED lighting drivers requiring stable component supply with consistent parametric performance across production lots.

Supply support for D2SB10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global industrial, computing, and consumer markets since 1979.

The D2SB10 belongs to TSC's standard bridge rectifier product line, engineered for high-reliability AC/DC conversion in cost-sensitive, high-volume power supply applications with emphasis on thermal efficiency and regulatory compliance.

FAQ

What is the maximum repetitive peak reverse voltage (V_RRM) for D2SB10?

The D2SB10 has a V_RRM rating of 100 V, meaning it can block up to 100 volts of reverse voltage repeatedly without breakdown. This value is confirmed in the Absolute Maximum Ratings table of the official Taiwan Semiconductor datasheet (Version K2103). The D2SB10 is part of a family spanning 50V to 800V, and its specific marking "D2SB10" directly encodes the 100V rating.

Does D2SB10 have automotive qualification?

The base D2SB10 is not AEC-Q101 qualified; however, the D2SB10H variant - indicated by the "H" suffix in the ordering code - is fully AEC-Q101 qualified. This distinction is explicitly defined in the Ordering Information section of the datasheet. For automotive applications, designers must specify D2SB10H to ensure compliance with stress-test requirements for temperature cycling, humidity, and mechanical shock.

What package type does D2SB10 use, and what are its key mechanical properties?

The D2SB10 uses the GBL package: a molded plastic body with matte tin-plated leads, UL 94V-0 flammability rating, and polarity markings on the top surface. Its weight is approximately 2.00 g, and it complies with JESD201 Class 2 whisker testing. The GBL outline dimensions and marking diagram are documented in Version K2103 of the Taiwan Semiconductor datasheet.

What is the forward voltage drop (V_F) specification for D2SB10 at rated current?

The D2SB10 has a maximum forward voltage drop of 1.1 V per diode at I_F = 2 A and T_J = 25°C, as specified in the Electrical Specifications table. This value is measured under pulsed conditions (PW = 0.3 ms) to minimize self-heating effects. At elevated junction temperatures, V_F decreases slightly due to negative temperature coefficient behavior typical of silicon diodes.

How does D2SB10 handle surge current, and what is its I_FSM rating?

The D2SB10 is rated for 80 A peak non-repetitive forward surge current (I_FSM) under an 8.3 ms single half-sine wave condition, as stated in the Absolute Maximum Ratings table. This surge capability supports inrush current during power-up of capacitive-input SMPS designs. Its I²t rating is 26 A²s, providing a time-current integral metric for fusing analysis in protection circuit design.