Infineon Technologies D452N12EVFXPSA1

Overview

D452N12EVFXPSA1 from Infineon Technologies (formerly EUPEC) is a high-power, press-pack silicon rectifier diode rated for 1200 V repetitive peak reverse voltage and 450 A mean forward current at 130 °C case temperature, with 13.5 kA non-repetitive surge capability and 0.48 mΩ slope resistance - used in industrial medium-voltage DC link rectification for traction converters and HVDC substations.

For engineers reviewing the D452N12EVFXPSA1 datasheet, D452N12EVFXPSA1 pinout, D452N12EVFXPSA1 application, or D452N12EVFXPSA1 equivalent, key selection criteria include junction-to-case thermal resistance (0.0855 °C/W), pressure-contact Si-pellet construction, anode-case polarity, and RMS forward current rating (710 A) under sinusoidal conduction.

Technical Context

This device is a two-terminal, unidirectional power rectifier with planar junction structure and diffusion-controlled carrier lifetime. It operates without gate control, relying on inherent PN-junction physics for conduction and recovery, and features a built-in temperature measurement bore (Ø3.2 × 15 mm) for direct junction monitoring in forced-cooled assemblies.

Its transient thermal impedance Z_thJC is characterized by seven RC network elements (e.g., R_th1 = 0.00059 °C/W, τ₁ = 0.175 s), enabling accurate short-time overload modeling. Recovery charge Q_r varies with di/dt (e.g., 1600 µAs at −di_F/dt = 100 A/µs), and forward voltage exhibits linear slope behavior above threshold (V_T(TO) = 0.77 V).

Key Specifications

Pinout & Package

Package: Press-pack, E-F case style with dual-side cooling interface, anode-integrated copper rope (70 mm²), cathode-integrated flexible tubing (red/blue), and Ø3.2 × 15 mm temperature probe bore. Polarity: Anode = case (metal housing). Mounting: Requires 5.5 kN clamping force.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power rectifier applications.

Compared with DD450N12K and SKKT 500/12, D452N12EVFXPSA1 uniquely combines built-in temperature sensing, pressure-contact reliability, and optimized two-sided thermal path - making it preferred for mission-critical, high-vibration, or thermally constrained rectifier designs where junction temperature fidelity directly impacts system availability.

Availability

D452N12EVFXPSA1 is available at Aetrix Electronics and suitable for railway traction converters, HVDC substation rectifiers, and industrial medium-voltage drives requiring stable component supply across extended product lifecycles.

Supply support for D452N12EVFXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with roots in Siemens' semiconductor division and legacy EUPEC high-power devices.

D452N12EVFXPSA1 belongs to Infineon's legacy EUPEC press-pack diode family, engineered for ultra-high-current, high-reliability rectification in utility-scale power conversion systems where mechanical robustness and thermal predictability are critical.

FAQ

What is the recommended clamping force for D452N12EVFXPSA1 installation?

The datasheet specifies a tightening torque corresponding to 5.5 kN clamping force. This value ensures optimal thermal contact between the Si-pellet and both anode and cathode heat transfer surfaces while avoiding pellet fracture. Use calibrated hydraulic presses or torque-controlled fixtures - never standard wrenches - and verify force with load-indicating washers during qualification.

Does D452N12EVFXPSA1 support reverse conduction or bidirectional operation?

No. D452N12EVFXPSA1 is a unidirectional power rectifier diode with fixed anode-case polarity. It conducts only from case (anode) to cathode rope under forward bias and blocks up to 1200 V in reverse. It cannot be used as a bidirectional switch or in synchronous rectification topologies without external commutation circuitry.

Can the temperature bore accept standard industrial thermocouples?

Yes - the Ø3.2 mm × 15 mm blind bore accommodates standard K-type or T-type miniature thermocouples with sheath diameters ≤3.0 mm. For best accuracy, use thermocouples with grounded junctions and ensure full insertion depth (15 mm); avoid epoxy fillers that impede thermal response. Calibration offset must account for bore wall conduction path.

How does the 0.48 mΩ slope resistance impact system efficiency calculations?

The slope resistance r_T defines the linear portion of the forward I–V curve beyond threshold (V_T(TO) = 0.77 V). At 1.35 kA, conduction loss = (1.35 kA)² × 0.48 mΩ = 875 W - a deterministic value independent of junction temperature, unlike exponential diode drop. This simplifies thermal modeling and enables precise loss budgeting in multi-device parallel configurations.