Infineon Technologies D452N14EXPSA1

Overview

D452N14EXPSA1 from Infineon Technologies (formerly EUPEC) is a high-power, press-pack, stud-mounted silicon rectifier diode rated for 1400 V repetitive peak reverse voltage and 450 A mean forward current at 130 °C case temperature, with 13.5 kA non-repetitive surge capability and 0.48 mΩ slope resistance - used in industrial DC traction converters and medium-voltage rectification stages of HVDC converter stations.

For engineers reviewing the D452N14EXPSA1 datasheet, D452N14EXPSA1 pinout, D452N14EXPSA1 application, or D452N14EXPSA1 equivalent, key selection criteria include junction-to-case thermal resistance (0.0855 °C/W), pressure-contact Si-pellet construction, anode-case polarity, and 14 mm creepage distance under DIN 40040 Class C humidity conditions.

Technical Context

This device implements a planar, diffusion-controlled, fast-recovery silicon rectifier structure optimized for high-current, low-loss operation in forced-air or liquid-cooled power conversion systems. Its 180 °C maximum junction temperature and 0.77 V threshold voltage enable stable conduction under sustained overload conditions.

The diode features a two-sided cooling-compatible E-F case design with integrated temperature measurement bore (Ø3.2 × 15 mm depth), and its transient thermal impedance Z_thJC is characterized by seven RC network elements for accurate thermal modeling in pulsed-load applications.

Key Specifications

Pinout & Package

Package: E-F type press-pack housing with dual-side cooling capability, anode-integrated case, cathode rope termination (70 mm² E-Cu-rope), and Ø3.2 mm × 15 mm deep temperature-sensing bore. Mounting torque: 5.5 kN.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power rectifier diode applications.

Compared with D452N14EXPSA1, DD450N14K trades 50 A average current capacity for slightly relaxed thermal limits, while SKKT 450/14 replaces press-pack reliability with standardized screw-mount flexibility - neither offers the combined 1400 V / 450 A / 0.0855 °C/W / 14 mm creepage specification set.

Availability

D452N14EXPSA1 is available at Aetrix Electronics and suitable for railway traction rectifiers, industrial HVDC converters, and metal smelting furnace supplies requiring stable component supply across multi-year production programs.

Supply support for D452N14EXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy infrastructure markets.

D452N14EXPSA1 belongs to Infineon's high-power press-pack diode product line, engineered for ultra-high-current, high-voltage industrial rectification where reliability, thermal robustness, and long service life are critical.

FAQ

What is the mounting torque specification for D452N14EXPSA1?

The specified tightening torque is 5.5 kN, applied to the central mounting stud to ensure optimal pressure contact between the silicon pellet and both anode and cathode heat transfer surfaces. Exceeding this value risks ceramic fracture or interfacial delamination, while under-torque increases thermal resistance and accelerates wear under thermal cycling.

Does D452N14EXPSA1 support two-sided cooling?

Yes - its E-F case design explicitly supports two-sided cooling, with thermal paths defined for both anode and cathode interfaces. The datasheet confirms reduced thermal resistance (up to 25% lower Z_thJC) when heatsinks contact both sides, validated by Fig. 7 transient thermal impedance curves labeled "1 - Beidseitige Kühlung".

Is the temperature measurement bore compatible with standard sensors?

Yes - the Ø3.2 mm × 15 mm deep blind bore accepts industry-standard 3.0 mm diameter thermistors or Pt100 RTDs with axial lead configuration. The bore depth ensures sensor tip placement within 2 mm of the silicon die backside, enabling ±2.5 °C junction temperature estimation accuracy under steady-state conditions.

What is the polarity configuration of D452N14EXPSA1?

The device uses anode-case polarity: the metal housing is electrically connected to the anode terminal, while the flexible cathode rope provides the isolated output connection. This configuration mandates electrical isolation of the heatsink and requires careful grounding strategy to prevent stray current paths in multi-diode parallel configurations.