Diodes Incorporated D4V7S1US2SLP-7B

Overview

D4V7S1US2SLP from Diodes Incorporated is a unidirectional transient voltage suppression (TVS) diode designed for ESD and surge protection of high-speed data lines in portable electronics. It features a 4.7 V reverse working voltage, 90 A peak pulse current (8/20 µs), 290 pF typical capacitance at 1 MHz, ±30 kV IEC 61000-4-2 contact/air ESD rating, and clamps to 7.3 V at 90 A. It is used in USB, HDMI, and audio interfaces of smartphones and digital cameras.

For engineers reviewing the D4V7S1US2SLP datasheet, D4V7S1US2SLP pinout, D4V7S1US2SLP application, or D4V7S1US2SLP equivalent, key selection criteria include low clamping voltage under high IPP, ultra-low capacitance for signal integrity, compact X1-DFN1006-2 footprint, RoHS/Green compliance, and IEC 61000-4-5 surge capability in space-constrained designs.

Technical Context

This TVS operates as a single-channel unidirectional clamp between two terminals, triggered by reverse-biased avalanche breakdown above its 4.8–7.0 V breakdown voltage. Its low 290 pF junction capacitance minimizes signal distortion on high-frequency lines such as USB 2.0 and audio paths.

The device uses a planar silicon junction structure in a lead-free, halogen-free DFN package with matte tin-plated copper leads. Thermal resistance is 500 °C/W (junction-to-ambient), and power derating begins above 25 °C ambient per Figure 1, supporting reliable operation up to +150 °C junction temperature.

Key Specifications

Pinout & Package

Package: X1-DFN1006-2 (Type SA-2), 1.02 mm × 0.62 mm body, 0.50 mm max height, 2-terminal surface-mount package with exposed thermal pad not present (no thermal pad).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar unidirectional TVS protection applications.

Compared with SMAJ4.5A and SP1001-01UTG, D4V7S1US2SLP uniquely balances sub-1 mm² size, 90 A surge rating, and 290 pF capacitance-making it optimal for mid-speed, space-constrained, dual-threat (ESD + surge) applications like smartphone USB and HDMI.

Availability

D4V7S1US2SLP is available at Aetrix Electronics and suitable for cellular handsets, portable electronics, and computers and peripherals requiring stable component supply across production lifecycles.

Supply support for D4V7S1US2SLP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' X1-DFN series of ultra-compact TVS diodes, engineered specifically for ESD and surge protection in next-generation portable and wearable electronics where board space and signal fidelity are critical constraints.

FAQ

What is the polarity configuration of D4V7S1US2SLP?

D4V7S1US2SLP is a unidirectional TVS diode with cathode (Pin 1) connected to the protected line and anode (Pin 2) tied to ground. It conducts only during reverse overvoltage events, making it suitable for DC-biased signal lines like USB D+ and HDMI TMDS pairs where polarity is fixed.

Can D4V7S1US2SLP be used for bidirectional protection?

No-it is inherently unidirectional. For bidirectional protection, two devices may be placed in series opposition (anode-to-anode or cathode-to-cathode), or a dedicated bidirectional TVS such as D4V7S1US2SLP's counterpart D4V7S1US2SLP-B should be selected. Layout must ensure correct orientation relative to signal DC bias.

What is the maximum recommended PCB trace length between D4V7S1US2SLP and the protected connector?

Trace length should be ≤2 mm from device to connector pin to minimize inductance that increases clamping voltage during fast transients. The suggested pad layout (X1-DFN1006-2) specifies 0.7 mm pad width and 0.3 mm solder mask opening to maintain controlled impedance and thermal performance.

Does D4V7S1US2SLP require derating at elevated ambient temperatures?

Yes-power dissipation must be derated linearly above 25 °C ambient per Figure 1. At 85 °C ambient, maximum allowable power drops to ~150 mW. This affects sustained surge repetition rate; for intermittent 8/20 µs pulses, thermal mass provides short-term margin, but system-level thermal design must account for cumulative heating.