Diodes Incorporated D5V0H1U2LP1610Q-7

Overview

D5V0H1U2LP1610Q from Diodes Incorporated is a single-channel, AEC-Q101-qualified TVS diode designed for high-surge ESD protection in high-speed data lines. It delivers 5.5V reverse breakdown voltage, 90A peak pulse current (8/20µs), 800pF typical channel capacitance, and ±30kV IEC 61000-4-2 contact/air ESD immunity - deployed in cellular handsets, USB interfaces, and automotive infotainment displays.

For engineers reviewing the D5V0H1U2LP1610Q datasheet, D5V0H1U2LP1610Q pinout, D5V0H1U2LP1610Q application, or D5V0H1U2LP1610Q equivalent, key selection criteria include clamping voltage at 90A (13V), low dynamic resistance (0.05Ω), automotive qualification status, U-DFN1610-2 footprint compatibility, and I/O-to-GND capacitance constraints in high-frequency signal paths.

Technical Context

This unidirectional TVS diode operates as a shunt protector between signal line and ground, triggering at 5.5V (V_BR) to clamp transients while maintaining <1.0µA leakage at 5.0V standoff. Its low 800pF capacitance minimizes signal integrity impact on USB 2.0 and MIPI D-PHY interfaces up to 480Mbps.

The device uses silicon avalanche junction technology with NiPdAu-plated copper leadframe terminals, enabling robust 30kV ESD handling per IEC 61000-4-2 and compliance with AEC-Q101 stress tests including HTGB, TCT, and H3TRB - validated in IATF 16949-certified facilities.

Key Specifications

Pinout & Package

Package: U-DFN1610-2 (Type B), 1.6mm × 1.0mm × 0.5mm body, molded green compound (UL 94V-0), moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar TVS diode applications.

Compared with SMAJ5.0A and SP1001-01UTG, D5V0H1U2LP1610Q uniquely balances 800pF capacitance, 90A surge capability, and AEC-Q101 compliance - making it the only viable option for automotive-grade, high-speed digital interface protection in space-constrained designs.

Availability

D5V0H1U2LP1610Q is available at Aetrix Electronics and suitable for automotive infotainment systems, portable medical devices, and industrial handheld terminals requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for D5V0H1U2LP1610Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' Automotive-Grade TVS portfolio, engineered specifically for ESD and surge protection in safety-critical vehicle subsystems - emphasizing AEC-Q101 validation, PPAP readiness, and IATF 16949 process control.

FAQ

What is the maximum clamping voltage at 90A for D5V0H1U2LP1610Q?

The clamping voltage is 13V at 90A peak pulse current (8/20µs waveform), measured from cathode to anode. This value is specified in the Electrical Characteristics table on page 3 of DS42349 Rev. 1–2 and reflects worst-case transient suppression performance under IEC 61000-4-5 Level 3 surge conditions.

Is D5V0H1U2LP1610Q suitable for bidirectional signal lines like USB D+/D−?

No - it is a unidirectional TVS diode configured for anode-to-ground protection. For bidirectional lines, two devices must be used back-to-back or a dedicated bidirectional TVS (e.g., D5V0H1B2LP1610Q) should be selected to ensure symmetrical clamping on both polarities.

Does the U-DFN1610-2 package require special PCB layout considerations?

Yes - the recommended pad layout (available at diodes.com/package-outlines.html) specifies thermal relief pads and solder mask defined (SMD) openings to ensure proper wetting and void-free reflow. The 0.40mm nominal lead length (L) and 1.10mm pitch (e) demand precise stencil aperture design for consistent paste volume.

How does the 0.05Ω dynamic resistance impact system-level ESD performance?

This low R_DYN reduces voltage overshoot during fast-rising ESD events (e.g., TLP 100ns pulses), resulting in tighter clamping control and lower peak voltage delivered to protected ICs - directly improving pass/fail margin in IEC 61000-4-2 testing at ±30kV contact discharge.