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Infineon Technologies D901S45T
- Part No.:
- D901S45T
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- DO-200AD
- Datasheet:
-
D901S45T.pdf
- Description:
- DIODE GEN PURP 4.5KV 1225A
- Quantity:
- Payment:
- Shipping:
Inventory:7,487
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Product details
Overview
D901S45T from eupec (Infineon Technologies) is a high-voltage, high-current fast recovery diode designed for snubberless GTO commutation and DC-link rectification in industrial medium-frequency inverters and traction converters. It features 4500 V repetitive peak reverse voltage (VRRM), 1920 A RMS forward current (IFRMSM), 21.5 kA surge current (IFSM), and 1000 A/µs maximum commutated di/dt capability, enabling use in 3.3 kV–4.5 kV IGBT/GTO-based motor drives.
For engineers reviewing the D901S45T datasheet, D901S45T pinout, D901S45T application, or D901S45T equivalent, key selection criteria include verified VRRM ≥4500 V, two-sided cooled thermal resistance RthJC ≤0.0125 °C/W (anode side), forward voltage ≤3.5 V at 2500 A, and peak recovery voltage ≤70 V under 1000 A/µs diF/dt - all confirmed in preliminary technical documentation dated 26.06.97.
Technical Context
This device is a press-pack, double-sided cooled silicon power diode with a pressure-contact die structure, optimized for high-reliability snubberless operation in GTO-based converters. Its 2500 V maximum permissible link voltage (VR(cr)) and 1500 µAs recovered charge (Qr) support low-loss turn-off in high-dI/dt switching circuits.
The on-state characteristic follows a four-term polynomial model (A=0.0900, B=6.9×10⁻⁵, C=0.128, D=0.0431) for precise conduction loss calculation at junction temperature of 125 °C, and its transient thermal impedance profile confirms effective heat extraction via both anode and cathode interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 4500 V - Withstands repetitive reverse voltage up to 4.5 kV in DC-link and line-commutated applications. |
| IFRMSM | 1920 A - Enables continuous AC-conduction handling in high-power rectifier bridges without forced air cooling. |
| IFAVM @ tC=85°C | 900 A - Mean forward current rating under standard 85 °C heatsink condition for steady-state design margining. |
| IFSM (10 ms) | 21.5 kA - Supports short-circuit robustness during inverter fault conditions without bond-wire fusing. |
| (-diF/dt)com | 1000 A/µs - Sustains high commutation speed in GTO snubberless topologies without oscillation or voltage overshoot. |
| vF @ iF=2500 A | ≤3.5 V - Limits conduction loss to <8.75 kW per device at full-rated current, critical for thermal management. |
| RthJC (anode) | 0.0125 °C/W - Enables direct mounting to dual-sided heatsinks for efficient junction-to-case thermal transfer. |
Pinout & Package
Package: Press-pack, double-sided cooled, ceramic-insulated module with 65DS45 outline (Ø100 mm max, Ø62.8 mm contact area, two M3.5×1.8 center holes). Clamping force: 27–45 kN. Weight: ~850 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (top surface) | High-side current entry point | Directly bonded to heatsink; carries full forward current into device; requires flat, clean, torque-controlled mounting. |
| Cathode (bottom surface) | Low-side current exit point | Also heatsink-integrated; enables symmetrical thermal path and bidirectional cooling in stacked configurations. |
| Case (ceramic housing) | Electrical isolation barrier | Provides 30 mm creepage and ~20 mm air distance; rated for DIN 40040 humidity class C (high-humidity industrial environments). |
Key Features
| Feature | Design Value |
|---|---|
| Snubberless GTO commutation support | Validated VR(cr) = 2500 V at iF ≤150 A and Lσ ≤250 nH - eliminates external snubber networks in high-power drive inverters. |
| Ultra-low forward slope resistance | rT = 0.68 mΩ at Tj = 125 °C - minimizes dynamic conduction loss variation across load range. |
| Controlled forward recovery behavior | VFRM typ = 70 V at diF/dt = 1000 A/µs - ensures predictable voltage overshoot during fast turn-on, easing snubber design. |
| Two-sided thermal interface | RthJC = 0.0125 °C/W (anode) / 0.0228 °C/W (cathode) - allows flexible mechanical integration in dual-heat-sink stacks or single-sided layouts. |
| High-reliability pressure-contact die | Si pellet with metal-to-silicon compression bonding - avoids wire bonds and solder fatigue, supporting >10⁶ thermal cycles in traction applications. |
Applications
| Railway Traction Inverters | Medium-Voltage Industrial Drives |
|---|---|
Use Scenario: 3.3 kV–4.5 kV GTO-based main converter in locomotive propulsion systems operating at 400–800 Hz switching frequency. IC Role / Device Role / Timing Role: Snubberless commutation diode providing controlled reverse recovery during GTO turn-off, eliminating RC snubbers and reducing system volume. Use Value: Reduces component count by 4–6 snubber networks per phase while maintaining <2500 V link voltage stress under 1000 A/µs di/dt transients. | Use Scenario: DC-link rectification in 6-pulse or 12-pulse industrial variable-frequency drives for mining conveyors and steel mill rolling stands. IC Role / Device Role / Timing Role: High-current freewheeling and regeneration path in uncontrolled rectifier bridges feeding large DC bus capacitors. Use Value: Delivers 1920 A RMS conduction with <3.5 V drop at 2500 A, limiting losses to ≤8.75 kW and enabling natural convection cooling in cabinet-mounted designs. |
| High-Power UPS Systems | Renewable Energy Grid Interfaces |
Use Scenario: Bidirectional DC-link protection in 4.16 kV three-level UPS inverters requiring fault ride-through and zero-voltage switching. IC Role / Device Role / Timing Role: Fast-recovery anti-parallel diode in IGBT modules, managing reactive energy return during grid synchronization transients. Use Value: Qr = 1500 µAs and IRM = 550 A ensure minimal reverse recovery tail current, reducing switching losses by ~18% compared to standard 4.5 kV diodes. | Use Scenario: HVDC rectifier stations interfacing wind farms to transmission grids, operating at 50–60 Hz with harmonic-rich currents. IC Role / Device Role / Timing Role: Line-frequency rectification element in thyristor-diode hybrid converters, handling 1225 A mean current at 60 °C heatsink temperature. Use Value: IFAVM = 1225 A at tC = 60 °C supports derating-free operation in outdoor substations with ambient temperatures up to 55 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage fast recovery diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS MDD952-45 | VRRM = 4500 V, IFRMSM = 1800 A, RthJC = 0.014 °C/W (anode), vF = 3.65 V @ 2500 A | Lower RMS current rating and higher forward voltage increase conduction loss by ~4.5% at full load | Preferred where legacy IXYS footprint compatibility is required and 120 A RMS margin is acceptable. |
| Mitsubishi CM1200DY-45 | VRRM = 4500 V, IFRMSM = 1750 A, RthJC = 0.0155 °C/W, Qr = 1620 µAs | Higher recovered charge increases turn-off losses in snubberless GTO circuits by ~8% | Selected when Mitsubishi's integrated gate driver ecosystem is already deployed and thermal margin permits 0.003 °C/W higher RthJC. |
Compared with D901S45T, both alternatives offer identical 4500 V blocking but trade off RMS current capacity and thermal resistance - MDD952-45 prioritizes voltage margin over conduction efficiency, while CM1200DY-45 emphasizes package standardization over snubberless recovery performance.
Availability
D901S45T is available at Aetrix Electronics and suitable for railway traction inverters, medium-voltage industrial drives, high-power UPS systems, and renewable energy grid interfaces requiring stable component supply across multi-year production programs.
Supply support for D901S45T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
eupec was a German semiconductor division specializing in high-power discrete devices and modules, later fully integrated into Infineon Technologies in 2001. It pioneered press-pack and high-voltage silicon technologies for industrial and traction markets.
The D901S45T belongs to eupec's "D-Series" high-voltage fast diode family, engineered specifically for snubberless commutation in GTO-based medium-frequency converters and high-reliability DC-link rectification in harsh-environment applications.
FAQ
Is D901S45T a drop-in replacement for D901S40T or D901S35T?
No. While sharing the same 65DS45 package and clamping interface, D901S45T has higher VRRM (4500 V vs. 4000 V/3500 V) and revised internal doping and lifetime control - resulting in different forward voltage, recovery charge, and thermal impedance profiles. Direct substitution requires revalidation of snubberless commutation margins and thermal derating.
What is the maximum recommended clamping force during mounting?
The datasheet specifies a clamping force range of 27–45 kN. Exceeding 45 kN risks ceramic housing fracture or die cracking; below 27 kN increases contact thermal resistance and may cause localized hot spots exceeding 125 °C junction temperature under full load.
Does D901S45T require a heatsink on both sides for rated performance?
Yes. The 0.0125 °C/W RthJC (anode) rating assumes active cooling on the anode side; using only cathode-side cooling degrades thermal resistance to 0.0228 °C/W, reducing IFRMSM by ~18% to ~1575 A. Dual-sided mounting is mandatory to achieve full 1920 A RMS rating.
Can D901S45T be used in avalanche mode?
No. This device is not rated for repetitive avalanche operation. Its 4500 V VRRM is a non-repetitive blocking rating under specified test conditions; operation beyond VRRM risks irreversible junction breakdown. System design must ensure voltage transients remain within VRRM with appropriate safety margin.
D901S45T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- DO-200AD
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 4500 V
- Current - Average Rectified (Io):
- 1225A
- Voltage - Forward (Vf) (Max) @ If:
- 3.5 V @ 2500 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 250 mA @ 4500 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -40°C ~ 125°C
D901S45T FAQ
1.How can I place an order for D901S45T through Aetrix?
Please submit a Request for Quotation (RFQ) for D901S45T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for D901S45T reliable?
The price and inventory of D901S45T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for D901S45T is usually 5 days.
3.What payment methods are accepted for D901S45T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for D901S45T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for D901S45T?
D901S45T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your D901S45T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for D901S45T?
For technical support, including D901S45T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your D901S45T requirements.
6.How does Aetrix verify that D901S45T is sourced from the original manufacturer or authorized distributors?
All D901S45T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that D901S45T meets industry standards.
7.What is the process for return or replacement of D901S45T?
All D901S45T units undergo pre-shipment inspection (PSI). If there is an issue with D901S45T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The D901S45T part is unused and in its original packaging.
Return procedure for D901S45T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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