Infineon Technologies D970N08TXPSA1

Overview

D970N08TXPSA1 from Infineon Technologies is a high-power, press-pack silicon rectifier diode rated for 800 V repetitive peak reverse voltage (VRRM), 970 A average on-state current at TC = 100 °C (IFAVM), and 10.3 kA non-repetitive surge current (IFSM) with 10 ms pulse width. It features low on-state voltage (1.45 V max at 2.3 kA, Tvj = 180 °C), 0.31 mΩ slope resistance, and is designed for industrial AC/DC conversion in medium-voltage traction and grid-connected power supplies.

For engineers reviewing the D970N08TXPSA1 datasheet, D970N08TXPSA1 pinout, D970N08TXPSA1 application, or D970N08TXPSA1 equivalent, key selection criteria include junction-to-case thermal resistance (0.057 °C/W two-sided), clamping force range (3.8–7.6 kN), and transient thermal impedance behavior under 50 Hz half-wave overload conditions.

Technical Context

This device is a single-die, pressure-contact, stud-mounted rectifier diode with symmetrical double-sided cooling capability. Its on-state characteristic follows a four-parameter logarithmic model (A=0.4891, B=1.323×10⁻⁴, C=2.391×10⁻³, D=1.340×10⁻²) valid over 200–4000 A, enabling precise conduction loss modeling in high-current converters.

Thermal performance is defined by dual-mode transient impedance: two-sided cooling yields lowest ZthJC (0.057 °C/W DC), while anode- or cathode-only cooling increases RthJC to 0.094/0.134 °C/W respectively. Reverse recovery charge Qr ranges from 25 µAs to 10,000 µAs depending on di/dt (1–1000 A/µs) and forward current (25–800 A).

Key Specifications

Pinout & Package

Package: Press-pack, stud-mounted, double-sided cooling capable, Si pellet with pressure contact, clamping force 3.8–7.6 kN, weight ≈ 75 g, creepage distance 10 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power rectifier diode applications.

Compared with MDD950-12N1 and STTH2008TV, D970N08TXPSA1 delivers 4.85× higher IFAVM and 5.4× lower RthJC in a mechanically robust press-pack form factor-making it uniquely suited for single-device, high-current, high-reliability industrial rectification where thermal interface control and surge immunity are paramount.

Availability

D970N08TXPSA1 is available at Aetrix Electronics and suitable for rail traction rectification, medium-voltage UPS input stages, and grid-scale battery charging requiring stable component supply, long-life thermal cycling endurance, and certified industrial-grade surge robustness.

Supply support for D970N08TXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and energy markets.

D970N08TXPSA1 belongs to Infineon's IFBIP series of high-power press-pack rectifier diodes, engineered for reliability in mission-critical AC/DC conversion systems operating under extreme thermal and electrical stress.

FAQ

What is the recommended clamping force for D970N08TXPSA1 installation?

The datasheet specifies a clamping force range of 3.8–7.6 kN for optimal thermal and electrical contact. Applying force below 3.8 kN risks increased RthJC and localized hot spots; exceeding 7.6 kN may deform the copper housing or damage the silicon die. Use calibrated torque tools and follow Infineon's mounting sequence: pre-torque to 50%, then final torque in cross-pattern increments.

Can D970N08TXPSA1 be used in single-sided cooling configurations?

Yes, but with significant derating: RthJC rises to 0.094 °C/W (anode-side cooled) or 0.134 °C/W (cathode-side cooled). At 970 A IFAVM, this increases junction temperature rise by 35–75 °C versus two-sided cooling. Single-sided use requires verified thermal simulation and validation of Tvj < 180 °C under worst-case ambient and load conditions.

Does D970N08TXPSA1 have AEC-Q101 qualification?

No. Although the datasheet references "AEC" in its revision header, this denotes internal Infineon Automotive Electronics Committee documentation alignment-not formal AEC-Q101 qualification. The device is qualified per industrial standards (IEC 60747-2) and carries no automotive-specific stress test certification for temperature cycling, humidity, or vibration.

What is the maximum allowable di/dt during turn-off for reliable operation?

The datasheet does not specify a maximum di/dt limit, but Qr data shows recovery behavior degrades above 1000 A/µs: Qr increases nonlinearly beyond that point, raising voltage overshoot risk. For robust snubberless operation, keep di/dt ≤ 500 A/µs; for snubber-assisted designs, validate with oscilloscope measurements using the RC network (R = 3.9 Ω, C = 1 µF) specified in the Qr test setup.