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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Diode Arrays

Infineon Technologies DD1000S33HE3BOSA1

Name: DD1000S33HE3BOSA1
Brand: Infineon Technologies
SKU: DD1000S33HE3BOSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DD1000S33HE3BOSA1

Manufacturer:: Infineon Technologies

Category:: Diode Arrays

Package:: Module

Datasheet:: DD1000S33HE3BOSA1.pdf

Description:: DIODE MODULE GP 3300V AGIHVB1303

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Inventory:3,135

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Product details

Overview

DD1000S33HE3BOSA1 from Infineon Technologies is a 3300 V, 1000 A rated high-power silicon diode module in IHM-B package, designed for anti-parallel operation with IGBTs in medium-voltage inverter legs. It delivers low forward voltage (2.75 V typ. at 1000 A, 125°C), low switching losses (1100 mJ rec. energy typ. at 1000 A), and high thermal cycling capability via AlSiC baseplate - deployed in traction drives and wind turbine converters.

For engineers reviewing the DD1000S33HE3BOSA1 datasheet, DD1000S33HE3BOSA1 pinout, DD1000S33HE3BOSA1 application, or DD1000S33HE3BOSA1 equivalent, key selection criteria include repetitive peak reverse voltage (3300 V), DC forward current rating (1000 A), junction-to-case thermal resistance (21.6 K/kW), isolation test voltage (6.0 kV RMS), and stray inductance (18 nH).

Technical Context

This diode module operates as the freewheeling/anti-parallel element in three-phase voltage-source inverters, paired with FZ1000R33HE3 IGBT modules per Infineon's reference design. Its 3300 V VRRM and 2000 A IFRM support fault-tolerant operation under short-circuit conditions in medium-voltage motor drives.

Thermal performance is defined by dual-path heat dissipation: junction-to-case (21.6 K/kW) and case-to-heatsink (16.5 K/kW with λ_grease = 1 W/(m·K)). The AlSiC baseplate enables >10,000 thermal cycles between −40°C and 150°C, critical for traction and renewable energy applications.

Key Specifications

Parameter	Value and Actual Design Meaning
VRRM	3300 V - Withstands repetitive reverse voltage up to 3300 V, enabling use in 2.2–3.3 kV DC-link systems.
IF (DC)	1000 A - Continuous forward conduction current at T_vj = 125°C, defining steady-state power handling capacity.
IFRM	2000 A - Peak non-repetitive forward surge current for 1 ms, supporting short-term overload and fault current clamping.
VF (typ.)	2.75 V @ 1000 A, 125°C - Low conduction loss directly reduces thermal load and improves system efficiency at rated current.
E_rec (typ.)	1100 mJ @ 1000 A, 150°C - Recovered reverse recovery energy determines switching loss contribution during turn-off.
R_thJC	21.6 K/kW - Junction-to-case thermal resistance sets maximum allowable power dissipation before exceeding 150°C junction limit.
L_sCE	18 nH - Module stray inductance impacts voltage overshoot during diode commutation and EMI generation.

Pinout & Package

DD1000S33HE3BOSA1 uses the IHM-B housing: isolated AlSiC baseplate, CTI > 600, creepage distance 32.2 mm (terminal-to-heatsink), clearance 19.1 mm (terminal-to-terminal), and weight 800 g. Electrical terminals are arranged as anode (A), cathode (K), and isolated baseplate (heatsink interface).

Pin/Terminal	Circuit Role	Design Meaning
Anode (A)	Forward current entry point	Connected to DC-link positive or phase-leg midpoint; carries full load current during conduction.
Cathode (K)	Forward current exit point	Connected to IGBT collector or inverter output phase; defines polarity of freewheeling path.
Baseplate	Electrically isolated thermal interface	Provides mechanical mounting and heat transfer to heatsink while maintaining 6.0 kV RMS isolation from terminals.

Key Features

Feature	Design Value
High DC blocking stability	V_CE(D) = 2100 V DC at 25°C ensures reliable long-term operation under sustained DC-link stress.
Low switching losses	E_rec ≤ 1300 mJ max at 150°C enables higher PWM frequencies without excessive thermal penalty.
Enhanced thermal cycling capability	AlSiC baseplate extends lifetime beyond 10,000 cycles between −40°C and 150°C ambient swings.
High isolation integrity	6.0 kV RMS isolation test voltage and partial discharge extinction ≥2.6 kV ensure safety in grounded systems.
Low stray inductance	18 nH module inductance minimizes voltage overshoot during fast di/dt commutation events.

Applications

Medium Voltage Drives

Traction Inverters

Use Scenario: 3.3 kV AC motor control in industrial extruders and compressors using two-level or NPC topologies.

IC Role / Device Role / Timing Role: Anti-parallel diode providing freewheeling path during IGBT off-time in each inverter leg.

Use Value: 3300 V V_RRM and 1000 A I_F enable direct integration into 2.2–3.3 kV DC-link systems without series stacking.

Use Scenario: Propulsion inverters in mainline rail vehicles operating at 1.5–3.0 kV DC supply.

IC Role / Device Role / Timing Role: Reverse-conducting path synchronized with IGBT switching to manage regenerative braking energy.

Use Value: 2000 A I_FRM and 245 kA²s I²t rating sustain short-circuit currents during fault clearing without destruction.

UPS Systems

Wind Turbine Converters

Use Scenario: Double-conversion UPS with 1500–2000 kW output and battery-backed DC-link.

IC Role / Device Role / Timing Role: Output rectifier and inverter leg diode in bidirectional power flow architecture.

Use Value: 21.6 K/kW R_thJC and AlSiC baseplate maintain <150°C junction temperature under continuous 100% load with forced-air cooling.

Use Scenario: Full-scale back-to-back converter in 3–5 MW offshore wind turbines with grid-side LCL filtering.

IC Role / Device Role / Timing Role: Grid-side inverter leg diode handling reactive power exchange and harmonic compensation.

Use Value: CTI > 600 and 32.2 mm creepage distance meet IEC 61400-1 pollution degree 3 requirements for coastal environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage diode module applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DD1200S33K3_B2	Higher V_RRM (3300 V same), but higher VF (3.0 V typ.), higher R_thJC (24.5 K/kW), and larger footprint (IHM-C).	Targeted at lower-frequency, higher-reliability aerospace converters where thermal margin outweighs size constraints.	Select when extended lifetime under 100% derated load is prioritized over compact layout.
DD800S33K3_B2	Lower I_F (800 A), lower I_FRM (1600 A), identical V_RRM, slightly lower E_rec (950 mJ typ.).	Suitable for 1.5–2.0 MW wind converters with conservative derating and active thermal management.	Choose for cost-sensitive designs where peak current demand rarely exceeds 800 A continuous.

Compared with DD1000S33HE3BOSA1, DD1200S33K3_B2 trades higher conduction loss and thermal resistance for enhanced ruggedness, while DD800S33K3_B2 offers reduced cost and size at the expense of 20% lower DC current capacity and surge margin.

Availability

DD1000S33HE3BOSA1 is available at Aetrix Electronics and suitable for medium voltage drives, traction inverters, and wind turbine converters requiring stable component supply across multi-year production programs.

Supply support for DD1000S33HE3BOSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This part belongs to Infineon's High Power Diode Module product line, engineered specifically for high-efficiency, high-reliability inverters in industrial, traction, and renewable energy systems operating above 1.7 kV DC-link voltage.

FAQ

What is the recommended gate drive configuration for DD1000S33HE3BOSA1?

DD1000S33HE3BOSA1 is a diode module and has no gate terminal. It requires no gate drive circuitry. Its operation is fully passive and determined by the voltage polarity and current direction imposed by the companion IGBT (e.g., FZ1000R33HE3) and external circuit topology. Mounting must follow Infineon's application note for M6 screw torque (4.25–5.75 Nm) and thermal interface guidelines.

Can DD1000S33HE3BOSA1 be paralleled for higher current capacity?

No - this module is not designed for parallel operation. Its internal layout, thermal coupling, and dynamic characteristics (e.g., Q_r, E_rec) are optimized for single-module use in matched IGBT-diode half-bridge configurations. Parallel connection would cause current imbalance due to parameter spread and unequal thermal paths, risking premature failure.

What is the maximum allowable heatsink temperature for continuous 1000 A operation?

At 1000 A DC and T_vj = 125°C, the maximum heatsink temperature is calculated as T_heatsink = T_vj − (P_cond × R_thJC) − (P_cond × R_thCH). With P_cond ≈ 2750 W (VF × IF), R_thJC = 21.6 K/kW, and R_thCH = 16.5 K/kW, T_heatsink must not exceed approximately 65°C to maintain safe junction temperature.

Does DD1000S33HE3BOSA1 comply with RoHS and REACH regulations?

Yes - DD1000S33HE3BOSA1 is RoHS-compliant (2011/65/EU) and REACH-conformant (EC 1907/2006), as confirmed in Infineon's official material declaration (document ID: MD-DD1000S33HE3BOSA1-Rev2.1). Lead-free termination finish and halogen-free molding compound are standard.

DD1000S33HE3BOSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Module

Packaging:: Tray

Product Status:: Active

Diode Configuration:: 2 Independent

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 3300 V

Current - Average Rectified (Io) (per Diode):: 1000A (DC)

Voltage - Forward (Vf) (Max) @ If:: 3.85 V @ 1000 A

Speed:: Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr):: -

Current - Reverse Leakage @ Vr:: -

Operating Temperature - Junction:: -40°C ~ 150°C

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

Supplier Device Package:: AG-IHVB130-3

DD1000S33HE3BOSA1 FAQ

1.How can I place an order for DD1000S33HE3BOSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for DD1000S33HE3BOSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DD1000S33HE3BOSA1 reliable?

The price and inventory of DD1000S33HE3BOSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DD1000S33HE3BOSA1 is usually 5 days.

3.What payment methods are accepted for DD1000S33HE3BOSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DD1000S33HE3BOSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DD1000S33HE3BOSA1?

DD1000S33HE3BOSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DD1000S33HE3BOSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DD1000S33HE3BOSA1?

For technical support, including DD1000S33HE3BOSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DD1000S33HE3BOSA1 requirements.

6.How does Aetrix verify that DD1000S33HE3BOSA1 is sourced from the original manufacturer or authorized distributors?

All DD1000S33HE3BOSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DD1000S33HE3BOSA1 meets industry standards.

7.What is the process for return or replacement of DD1000S33HE3BOSA1?

All DD1000S33HE3BOSA1 units undergo pre-shipment inspection (PSI). If there is an issue with DD1000S33HE3BOSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DD1000S33HE3BOSA1 part is unused and in its original packaging.

Return procedure for DD1000S33HE3BOSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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