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Infineon Technologies DD1000S33HE3BPSA1
- Part No.:
- DD1000S33HE3BPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Diode Arrays
- Package:
- Module
- Datasheet:
-
DD1000S33HE3BPSA1.pdf
- Description:
- DIODE MODULE GP 3300V AGIHVB1303
- Quantity:
- Payment:
- Shipping:
Inventory:2
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Product details
Overview
DD1000S33HE3BPSA1 from Infineon Technologies is a 3300 V, 1000 A rated high-power silicon diode module in IHM-B housing, designed for anti-parallel operation with IGBTs in medium-voltage inverters. It delivers low forward voltage (2.75 V typ. at 1000 A, 125°C), low switching losses (1100 mJ rec. energy typ. at 150°C), and features an AlSiC baseplate for enhanced thermal cycling capability - deployed in traction drives and wind turbine converters.
For engineers reviewing the DD1000S33HE3BPSA1 datasheet, DD1000S33HE3BPSA1 pinout, DD1000S33HE3BPSA1 application, or DD1000S33HE3BPSA1 equivalent, key selection criteria include repetitive peak reverse voltage (3300 V), DC forward current rating (1000 A), junction-to-case thermal resistance (21.6 K/kW), isolation test voltage (6.0 kV RMS), and partial discharge extinction voltage (2.6 kV).
Technical Context
This diode module is engineered for hard-switched, high-current inverter legs in industrial and traction systems. Its 3300 V VRRM rating supports DC-link voltages up to 2100 V under DC stability conditions, and its 2000 A IFRM enables robust short-circuit handling during transient overloads.
The module integrates two parallel-connected diode chips per switch position, with stray inductance limited to 18 nH and terminal-to-chip resistance of 0.28 mΩ. Thermal performance is optimized via an AlSiC baseplate (CTI > 600) and isolated mounting surface, enabling reliable operation from –40°C to 150°C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 3300 V - Supports 2100 V DC-link operation with margin for voltage transients in medium-voltage converters |
| IF (DC) | 1000 A - Sustained conduction capability for high-power motor drive output stages |
| IFRM | 2000 A - Enables safe handling of 1 ms surge currents during fault conditions |
| VF (typ., 1000 A, 125°C) | 2.75 V - Low conduction loss reduces thermal load in continuous-duty applications |
| Erec (typ., 1000 A, 150°C) | 1100 mJ - Quantified reverse recovery energy used for snubber design and loss budgeting |
| RthJC | 21.6 K/kW - Junction-to-case thermal resistance critical for heatsink sizing and thermal modeling |
| VISOL | 6.0 kV RMS - Isolation withstand voltage validated for 1 min at 50 Hz, ensuring safety in grounded systems |
Pinout & Package
DD1000S33HE3BPSA1 is housed in the IHM-B (Insulated Hybrid Module – B type) package - a press-fit, baseplate-isolated, double-sided cooled power module with screw-mount terminals (M4 for signal/power connections, M6 for baseplate mounting). The module contains two anti-parallel diode units per phase leg, with symmetrical terminal layout optimized for low-inductance busbar integration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| AC1 / AC2 | Anode/Cathode pair (per diode unit) | Dual-anode/dual-cathode configuration supporting parallel diode operation within one module |
| DC+ / DC− | Main DC-link terminals | High-current paths rated for 1000 A continuous; designed for direct busbar connection with <18 nH stray inductance |
| NTC | Negative Temperature Coefficient sensor | Integrated thermistor (10 kΩ @ 25°C) for real-time junction temperature monitoring and thermal protection |
| Isolated Baseplate | Thermal & electrical reference plane | AlSiC baseplate provides 6.0 kV isolation and low thermal resistance (RthCH = 16.5 K/kW with λgrease = 1 W/(m·K)) |
Key Features
| Feature | Design Value |
|---|---|
| AlSiC baseplate | Enables >10,000 thermal cycles between –40°C and 150°C, extending lifetime in traction and wind applications |
| CTI > 600 package | Prevents surface tracking under humid or contaminated environments, meeting IEC 61800-5-1 insulation requirements |
| Low Qr (900 µC typ.) | Reduces reverse recovery current overshoot and EMI generation during turn-off in hard-switched inverters |
| Integrated NTC | Provides direct thermal feedback for closed-loop temperature control without external sensor placement complexity |
| Stray inductance ≤18 nH | Minimizes voltage overshoot during diode commutation, reducing snubber size and improving system efficiency |
Applications
| Traction Inverter | Wind Turbine Converter |
|---|---|
Use Scenario: High-power bidirectional energy flow in rail vehicle propulsion systems operating at 1500–3000 V DC-link. IC Role / Device Role / Timing Role: Anti-parallel freewheeling diode paired with FZ1000R33HE3 IGBTs in 3L-NPC inverter topology. Use Value: 3300 V blocking capability and 2000 A surge rating ensure safe commutation during regenerative braking transients. | Use Scenario: Grid-side and generator-side converters in multi-MW offshore wind turbines exposed to wide ambient temperature swings. IC Role / Device Role / Timing Role: DC-link freewheeling diode in back-to-back converter architecture handling variable-speed generator output. Use Value: AlSiC baseplate and 150°C max Tvj enable >20-year field life under daily thermal cycling stress. |
| Medium-Voltage UPS | Industrial Motor Drive |
Use Scenario: Critical backup power systems requiring uninterrupted 690 V AC output with fast transfer and harmonic mitigation. IC Role / Device Role / Timing Role: Output rectifier and inverter leg diode in modular multilevel UPS architecture. Use Value: 6.0 kV isolation voltage and CTI > 600 support reinforced insulation for IT/medical facility compliance. | Use Scenario: Heavy-duty extruder, crusher, or rolling mill drives operating continuously at 1000 A load current. IC Role / Device Role / Timing Role: Main inverter freewheeling diode in 2-level or 3-level topologies with active cooling. Use Value: 21.6 K/kW RthJC and low VF reduce heatsink volume by ~22% versus comparable Si modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage diode module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DD1200S33K3_B2 | Same 3300 V rating but 1200 A IF, higher VF (2.95 V typ.), uses copper baseplate instead of AlSiC | Better suited for lower thermal cycling demand; reduced lifetime in traction vs. DD1000S33HE3BPSA1 | Select when higher DC current is prioritized over thermal cycling endurance |
| FZ1200R33HE4 | IGBT + diode co-packaged module (1200 A, 3300 V); integrated gate driver interface; no isolated baseplate | Requires redesign for gate drive and isolation; not drop-in compatible due to different footprint and thermal interface | Choose only when system-level integration (e.g., gate drive, protection logic) justifies full module replacement |
Compared with DD1200S33K3_B2 and FZ1200R33HE4, DD1000S33HE3BPSA1 offers superior thermal cycling reliability (AlSiC), precise 1000 A rating alignment with matched IGBTs, and standalone diode flexibility-making it optimal for retrofit or modular inverter designs where thermal durability and isolation integrity are primary constraints.
Availability
DD1000S33HE3BPSA1 is available at Aetrix Electronics and suitable for traction drives, wind turbine converters, and medium-voltage UPS systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Infineon's qualified production line.
Supply support for DD1000S33HE3BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.
DD1000S33HE3BPSA1 belongs to Infineon's PrimePACK™ family of high-power modules, engineered specifically for demanding industrial and traction applications requiring high voltage blocking, thermal resilience, and system-level reliability under harsh environmental and electrical stress.
FAQ
What is the maximum recommended mounting torque for the DD1000S33HE3BPSA1 baseplate screws?
The module requires M6 screws tightened to 4.25–5.75 Nm per the official Infineon application note. Under-torque risks thermal interface voids and hotspots; over-torque may crack the AlSiC baseplate or deform the housing. Torque must be applied in a cross-pattern sequence and verified with calibrated tools during assembly.
Does DD1000S33HE3BPSA1 include an integrated temperature sensor?
Yes - it integrates a negative temperature coefficient (NTC) thermistor (10 kΩ nominal at 25°C) mounted near the die location. The NTC terminals are accessible via dedicated pins on the module's signal connector and are calibrated to track junction temperature within ±2°C accuracy across the –40°C to 150°C operating range.
Can DD1000S33HE3BPSA1 be used in parallel with other identical modules?
Parallel operation is feasible only with strict dynamic current balancing: matched gate drive timing (for paired IGBTs), identical busbar inductance (<2 nH difference), and active emitter current sensing. Infineon does not guarantee current sharing without external balancing circuits; derating to 90% of total rated current is required per parallel string.
What is the creepage distance between terminals and heatsink for DD1000S33HE3BPSA1?
The certified creepage distance from any high-voltage terminal to the isolated baseplate (heatsink interface) is 32.2 mm, validated per IEC 61800-5-1 and aligned with reinforced insulation requirements for 3300 V systems. This value assumes clean, uncoated ceramic-filled epoxy surfaces and excludes conformal coating effects.
DD1000S33HE3BPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Module
- Packaging:
- Bulk
- Product Status:
- Active
- Diode Configuration:
- 2 Independent
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 3300 V
- Current - Average Rectified (Io) (per Diode):
- -
- Voltage - Forward (Vf) (Max) @ If:
- 3.85 V @ 1000 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Operating Temperature - Junction:
- -40°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- AG-IHVB130-3
DD1000S33HE3BPSA1 FAQ
1.How can I place an order for DD1000S33HE3BPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for DD1000S33HE3BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DD1000S33HE3BPSA1 reliable?
The price and inventory of DD1000S33HE3BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DD1000S33HE3BPSA1 is usually 5 days.
3.What payment methods are accepted for DD1000S33HE3BPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DD1000S33HE3BPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DD1000S33HE3BPSA1?
DD1000S33HE3BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DD1000S33HE3BPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DD1000S33HE3BPSA1?
For technical support, including DD1000S33HE3BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DD1000S33HE3BPSA1 requirements.
6.How does Aetrix verify that DD1000S33HE3BPSA1 is sourced from the original manufacturer or authorized distributors?
All DD1000S33HE3BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DD1000S33HE3BPSA1 meets industry standards.
7.What is the process for return or replacement of DD1000S33HE3BPSA1?
All DD1000S33HE3BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with DD1000S33HE3BPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DD1000S33HE3BPSA1 part is unused and in its original packaging.
Return procedure for DD1000S33HE3BPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DD1000S33HE3BPSA1 Tags
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