Infineon Technologies DD104N12KAHPSA1

Overview

DD104N12KAHPSA1 from Semikron is a press-pack dual-diode rectifier module rated for 1200 V repetitive peak reverse voltage (VRRM), 104 A average on-state current (IFAVM) at TC = 100°C, and 160 A RMS on-state current (IFRMSM), designed for high-power industrial AC/DC conversion in six-pulse bridge (B6) and two-pulse bridge (B2) configurations.

For engineers reviewing the DD104N12KAHPSA1 datasheet, DD104N12KAHPSA1 pinout, DD104N12KAHPSA1 application, or DD104N12KAHPSA1 equivalent, key selection criteria include junction-to-case thermal resistance (0.185 °C/W per arm), forward voltage drop (1.4 V max at 300 A), surge current rating (2900 A, 10 ms), pressure-contact Si die construction, and AlN internal insulation for high-voltage isolation.

Technical Context

This dual-diode module implements a common-cathode configuration with two independent silicon rectifier arms housed in a single insulated press-pack package. Each arm supports full-wave conduction with matched thermal and electrical characteristics, enabling symmetrical current sharing in B2/B6 rectifier topologies.

It uses silicon pellets with pressure-contact metallization and aluminum nitride (AlN) ceramic for internal isolation, delivering 3.0 kV RMS insulation test voltage (1 sec, 50 Hz). Thermal performance is defined by transient junction-to-case impedance (ZthJC) with analytical R-τ elements for precise loss modeling under non-DC conditions.

Key Specifications

Pinout & Package

DD104N12KAHPSA1 is housed in a press-pack module with two isolated anode terminals (A1, A2), one shared cathode terminal (K), and mechanical mounting interfaces. The package uses pressure-contact Si die on AlN substrate, requiring controlled torque (4 Nm ±15% for M1 mechanical, 4 Nm ±10% for M2 electrical terminals) and delivers 160 g typical mass and 15 mm creepage distance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power rectifier module applications.

Compared with DD104N12KAHPSA1, DD104N16KAHPSA1 trades voltage headroom for identical thermal performance, while DD125N12KHPSA1 increases current capacity at the cost of higher conduction loss and heatsink requirements-neither is pin-compatible, and both require mechanical and thermal revalidation.

Availability

DD104N12KAHPSA1 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, medium-voltage welding systems, and traction converter auxiliary supplies requiring stable component supply across multi-year production cycles.

Supply support for DD104N12KAHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Semikron is a German power semiconductor manufacturer specializing in high-reliability modules for industrial, traction, and renewable energy applications since 1951.

This part belongs to Semikron's DD-series press-pack rectifier modules, engineered for high-current, high-voltage AC/DC conversion where long-term thermal stability and surge robustness are critical.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies TC op from –40°C to +150°C, with IFAVM = 104 A rated at TC = 100°C. Operation at TC = 150°C is permitted only under reduced current conditions defined by the TC = f(IFAVM) curve on page 6; sustained 150°C case temperature requires derating to ≤65 A average current.

Does DD104N12KAHPSA1 include integrated reverse recovery optimization?

No-this is a standard fast-recovery silicon rectifier module without soft-recovery or controlled Qr features. Reverse recovery behavior depends on external circuit inductance and di/dt; Qr is not specified in the datasheet, and designers must characterize recovery under actual operating conditions.

Can this module be used in parallel configurations?

Parallel operation is not recommended without active current-sharing control. While the dual arms are matched, inter-module paralleling introduces imbalance due to thermal coupling differences and layout-induced inductance mismatches; external balancing reactors or master-slave gate control (for thyristor hybrids) are required for reliable parallel use.

What torque values are required for electrical and mechanical terminals?

Electrical terminal torque (M2) is 4 Nm ±10%, and mechanical mounting torque (M1) is 4 Nm ±15%. Exceeding these values risks ceramic fracture or contact deformation; use calibrated torque tools and verify contact resistance <0.5 mΩ after assembly to ensure low-loss conduction paths.