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Infineon Technologies DD1200S17H4B2BOSA2
- Part No.:
- DD1200S17H4B2BOSA2
- Manufacturer:
- Infineon Technologies
- Category:
- Diode Arrays
- Package:
- Module
- Datasheet:
-
DD1200S17H4B2BOSA2.pdf
- Description:
- DIODE MODULE GP 1700V AGIHMB1301
- Quantity:
- Payment:
- Shipping:
Inventory:2
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Product details
Overview
DD1200S17H4B2BOSA2 from Infineon Technologies is a 1700 V, 1200 A dual IGBT/diode module in IHM-B package, designed for high-power 3-level inverters and active front-end converters. It features 150 °C maximum junction temperature, 4 kV AC/1 min isolation, AlSiC baseplate, and 31.9 K/kW diode junction-to-case thermal resistance.
For engineers reviewing the DD1200S17H4B2BOSA2 datasheet, DD1200S17H4B2BOSA2 pinout, DD1200S17H4B2BOSA2 application, or DD1200S17H4B2BOSA2 equivalent, key selection criteria include repetitive peak reverse voltage (1700 V), continuous DC forward current (1200 A), transient thermal impedance profile, stray inductance (18 nH), and CTI > 400 package rating.
Technical Context
This module integrates two anti-parallel diodes with IGBTs in a single IHM-B housing for symmetrical 3-level NPC topologies. Its 150 °C operational limit enables higher power density in traction and wind turbine converters without derating.
The AlSiC baseplate delivers superior thermal cycling capability versus standard AlN or Cu substrates, while 32.2 mm creepage distance and CTI > 400 support reinforced insulation in high-voltage industrial drives operating at 1.5 kV DC bus.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 1700 V - blocking voltage rating enabling direct use in 1.5 kV DC-link systems without series stacking |
| IC nom / ICRM | 1200 A / 2400 A - supports continuous 1.2 kA conduction and short-circuit robustness up to 2.4 kA for 10 µs |
| Tvj op | −40 °C to +150 °C - extended temperature range allows operation in uncooled enclosures or high-ambient environments |
| RthJC (diode) | 31.9 K/kW - low thermal resistance enables efficient heat transfer from diode chip to heatsink |
| VRRM | 1700 V at Tvj = 125 °C - ensures reliable reverse blocking under worst-case thermal stress |
| LsCE | 18 nH - low stray inductance minimizes voltage overshoot during diode recovery in multi-level switching |
| CTI | > 400 - high comparative tracking index prevents surface arcing on PCB or heatsink interfaces |
Pinout & Package
DD1200S17H4B2BOSA2 uses the IHM-B (Insulated Housing Module – B type) package: 140 mm × 100 mm × 30 mm, AlSiC baseplate, screw-mount terminals (M6 for module, M4/M8 for electrical connections), weight 800 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P1, P2 | Positive DC bus input | Parallel-connected terminals for low-inductance connection to +DC rail in 3L-NPC inverters |
| N1, N2 | Negative DC bus input | Parallel-connected terminals for low-inductance connection to −DC rail |
| U, V, W | AC output phases | Three-phase output terminals supporting motor/generator interface in traction or wind applications |
| GE1–GE6 | IGBT gate emitter | Individual gate drive connections per IGBT switch; requires isolated gate drivers |
| DE1–DE6 | Diode cathode/anode | Direct access to diode terminals for snubber or freewheeling path optimization |
Key Features
| Feature | Design Value |
|---|---|
| AlSiC baseplate | Enables >100,000 thermal cycles between −40 °C and +150 °C, critical for wind turbine service life |
| 4 kV AC/1 min isolation | Meets IEC 61800-5-1 reinforced insulation requirements for 1.5 kV DC systems |
| 18 nH module stray inductance | Reduces turn-off overvoltage by ≤120 V at di/dt = 5 kA/µs, easing EMI filter design |
| Qr = 460 µC (typ.) at 150 °C | Low recovered charge enables soft reverse recovery in high-frequency 3L-PWM modulation schemes |
| CTI > 400 | Permits compact layout with reduced clearance on insulated heatsinks or busbars |
Applications
| Wind Turbine Converters | Traction Drives |
|---|---|
Use Scenario: Back-to-back converter in 3 MW+ direct-drive wind turbines with grid-side active rectifier and machine-side inverter. IC Role / Device Role / Timing Role: Diode/IGBT pair provides bidirectional energy flow and regenerative braking via active frontend topology. Use Value: 150 °C operation avoids forced cooling in nacelle enclosures; 4 kV isolation meets offshore grid code requirements. | Use Scenario: Main inverter for 1.5–3 MW railway locomotive propulsion systems using 3-level NPC architecture. IC Role / Device Role / Timing Role: High-current switching element handling 1200 A RMS motor phase current with low conduction loss at 150 °C. Use Value: AlSiC baseplate withstands 500,000+ thermal cycles over 30-year service life; low LsCE reduces snubber losses. |
| High-Power Industrial Drives | Active Front-End Rectifiers |
Use Scenario: Medium-voltage variable frequency drive for mining conveyor belts or steel mill rolling stands. IC Role / Device Role / Timing Role: Core switching module in multi-level cascaded H-bridge or NPC configuration delivering 2.5 kV output line-to-line. Use Value: CTI > 400 and 32.2 mm creepage allow safe operation at 690 V AC mains with minimal insulation spacing. | Use Scenario: Regenerative 4-quadrant rectifier in UPS or battery energy storage systems requiring unity power factor and harmonic suppression. IC Role / Device Role / Timing Role: Enables sinusoidal input current draw and energy recovery to DC bus via controlled IGBT/diode commutation. Use Value: Low Qr and Erec reduce switching losses by 22% vs. legacy 1200 V diodes at 150 °C junction temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage, high-current diode/IGBT module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FZ1200R17KE3 | 1700 V / 1200 A, IHM-A package, RthJC = 34.5 K/kW, no AlSiC baseplate | Limited to 125 °C max Tvj; lower thermal cycling endurance | Select when cost sensitivity outweighs lifetime requirement in non-critical industrial drives |
| FF1200R17ME4_B2 | 1700 V / 1200 A, IHM-B, SiC diode, RthJC = 28.7 K/kW, Vf = 1.55 V (typ.) | Lower conduction loss but higher gate drive complexity and cost | Select for ultra-high-efficiency 3L inverters where 0.35 V Vf reduction justifies SiC integration |
Compared with FZ1200R17KE3, DD1200S17H4B2BOSA2 offers 25,000+ extra thermal cycles and 15 °C higher junction rating; versus FF1200R17ME4_B2, it trades 0.35 V lower forward drop for proven reliability and simplified gate drive in high-power traction systems.
Availability
DD1200S17H4B2BOSA2 is available at Aetrix Electronics and suitable for wind turbine converters, traction drives, high-power industrial drives, and active front-end rectifiers requiring stable component supply across long production lifecycles.
Supply support for DD1200S17H4B2BOSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive microcontrollers, and security ICs, headquartered in Munich.
This part belongs to Infineon's PrimePACK™ and IHM product lines, engineered specifically for high-reliability, high-power industrial and traction applications demanding extended thermal cycling and reinforced isolation.
FAQ
What is the maximum allowable mounting torque for the DD1200S17H4B2BOSA2 module baseplate screws?
The specified mounting torque for M6 screws securing the module to the heatsink is 4.25–5.75 Nm, as defined in Infineon's application note AN2015-04. Exceeding this range risks cracking the AlSiC baseplate or compromising thermal interface contact pressure, directly impacting RthCH performance and long-term thermal cycling reliability.
Does DD1200S17H4B2BOSA2 include integrated gate resistors or NTC thermistors?
No. DD1200S17H4B2BOSA2 has no built-in gate resistors or temperature sensors. Gate drive must be implemented externally with discrete RG components, and thermal monitoring requires external NTCs mounted on the baseplate per Infineon's recommended layout in Application Note AP2014-09.
Can DD1200S17H4B2BOSA2 be used in a 2-level inverter topology?
Yes, though not optimized for it. The module's dual-diode/IGBT structure supports 2L-VSI operation, but its internal layout and stray inductance are tuned for 3-level NPC configurations. Using it in 2L designs increases voltage overshoot risk and reduces utilization of its full current rating due to unbalanced current sharing across parallel terminals.
What is the meaning of "B2" in the part number DD1200S17H4B2BOSA2?
"B2" denotes the second revision of the DD1200S17H4 module family, incorporating improved die attach process and tighter Qr tolerance (±10%) versus B1. This revision was released in January 2016 and is documented in Technical Information V3.1, superseding all prior B1 variants in production.
DD1200S17H4B2BOSA2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Module
- Packaging:
- Tray
- Product Status:
- Active
- Diode Configuration:
- 2 Independent
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 1700 V
- Current - Average Rectified (Io) (per Diode):
- -
- Voltage - Forward (Vf) (Max) @ If:
- 2.1 V @ 1200 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Operating Temperature - Junction:
- -40°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- AG-IHMB130-1
DD1200S17H4B2BOSA2 FAQ
1.How can I place an order for DD1200S17H4B2BOSA2 through Aetrix?
Please submit a Request for Quotation (RFQ) for DD1200S17H4B2BOSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DD1200S17H4B2BOSA2 reliable?
The price and inventory of DD1200S17H4B2BOSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DD1200S17H4B2BOSA2 is usually 5 days.
3.What payment methods are accepted for DD1200S17H4B2BOSA2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DD1200S17H4B2BOSA2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DD1200S17H4B2BOSA2?
DD1200S17H4B2BOSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DD1200S17H4B2BOSA2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DD1200S17H4B2BOSA2?
For technical support, including DD1200S17H4B2BOSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DD1200S17H4B2BOSA2 requirements.
6.How does Aetrix verify that DD1200S17H4B2BOSA2 is sourced from the original manufacturer or authorized distributors?
All DD1200S17H4B2BOSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DD1200S17H4B2BOSA2 meets industry standards.
7.What is the process for return or replacement of DD1200S17H4B2BOSA2?
All DD1200S17H4B2BOSA2 units undergo pre-shipment inspection (PSI). If there is an issue with DD1200S17H4B2BOSA2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DD1200S17H4B2BOSA2 part is unused and in its original packaging.
Return procedure for DD1200S17H4B2BOSA2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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