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Infineon Technologies DD1200S33K2CB3NOSA1
- Part No.:
- DD1200S33K2CB3NOSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Diode Arrays
- Package:
- Module
- Datasheet:
-
DD1200S33K2CB3NOSA1.pdf
- Description:
- DIODE MODULE GP 3300V AIHV130-3
- Quantity:
- Payment:
- Shipping:
Inventory:6,187
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Product details
Overview
DD1200S33K2CB3NOSA1 from Infineon Technologies is a 3.3 kV, 1200 A dual-diode module for high-power inverter legs in industrial traction and medium-voltage drives. It features 3300 V repetitive peak reverse voltage, 2400 A repetitive peak forward current, 500 kA²s I²t rating, and 17.0 K/kW junction-to-case thermal resistance per diode. Used in 3-level NPC inverters for rail propulsion systems.
For engineers reviewing the DD1200S33K2CB3NOSA1 datasheet, DD1200S33K2CB3NOSA1 pinout, DD1200S33K2CB3NOSA1 application, or DD1200S33K2CB3NOSA1 equivalent, key selection criteria include reverse recovery energy (735–1550 mJ), thermal resistance (6.00 K/kW per module), isolation test voltage (6.0 kV RMS), and stray inductance (25 nH) - all critical for high-reliability 3.3 kV converter design.
Technical Context
This module integrates two fast-recovery, soft-switching anti-parallel diodes optimized for synchronous operation with FZ1200R33KF2C IGBTs in 3-level neutral-point-clamped (NPC) topologies. Its AlN-based internal isolation and AlSiC baseplate support stable thermal performance under 125°C junction operation.
Dynamic behavior is characterized at 1800 V blocking voltage and -diF/dt = 6800 A/µs, with reverse recovery charge ranging from 710 µC (25°C) to 1300 µC (125°C). The 25 nH module stray inductance directly impacts turn-off overshoot and snubber sizing in high-dI/dt applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 3300 V - Maximum repetitive reverse blocking voltage per diode; defines usable DC-link voltage headroom in 3.3 kV systems. |
| IF | 1200 A - Continuous DC forward current per diode; sets steady-state conduction capability in inverter arms. |
| I²t | 500 kA²s - Short-circuit withstand capability at 10 ms; determines fuse coordination and protection timing margins. |
| RthJC | 17.0 K/kW per diode - Junction-to-case thermal resistance; used with heatsink RthCH to calculate max junction temperature rise. |
| LsCE | 25 nH - Module collector-emitter stray inductance; directly impacts voltage overshoot during diode commutation. |
| VISOL | 6.0 kV RMS - Isolation test voltage at 50 Hz for 1 minute; certifies reinforced insulation for safety-critical drive systems. |
| Qr | 710–1300 µC - Reverse recovery charge range across temperature; governs switching loss and EMI generation in hard-switched converters. |
Pinout & Package
DD1200S33K2CB3NOSA1 is housed in a press-fit, insulated baseplate package with 6 main terminals: two anodes (A1, A2), two cathodes (K1, K2), and two isolated mounting screw holes (M6) for thermal and electrical grounding. Baseplate material is AlSiC; internal isolation uses AlN ceramic.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1 | Anode 1 | High-side diode anode; connects to positive DC-link in upper inverter leg. |
| K1 | Cathode 1 | High-side diode cathode; ties to IGBT collector node in NPC topology. |
| A2 | Anode 2 | Low-side diode anode; connects to neutral point or mid-rail in 3-level configuration. |
| K2 | Cathode 2 | Low-side diode cathode; routes to negative DC-link or phase output node. |
| Baseplate | Thermal & Electrical Reference | Electrically isolated AlSiC baseplate; requires conductive thermal paste (λ = 1 W/(m·K)) and M6 mounting torque 4.25–5.75 Nm. |
Key Features
| Feature | Design Value |
|---|---|
| Soft reverse recovery | Peak reverse recovery current limited to 2000 A at 125°C; reduces EMI and stress on gate drivers. |
| Low thermal resistance | 6.00 K/kW case-to-heatsink (per module); enables compact heatsink design in space-constrained traction cabinets. |
| High isolation integrity | 2.6 kV partial discharge extinction voltage and CTI > 400; ensures long-term reliability in humid or contaminated environments. |
| Controlled stray inductance | 25 nH CE loop inductance; supports predictable snubberless switching up to 2 kHz in 3.3 kV converters. |
| Robust mechanical interface | M6 mounting screws with defined torque range (4.25–5.75 Nm); prevents baseplate warping and maintains thermal contact pressure. |
Applications
| Rail Traction Inverters | Medium-Voltage Industrial Drives |
|---|---|
Use Scenario: 3.3 kV 3-level NPC inverter for main propulsion of metro and light rail vehicles. IC Role / Device Role / Timing Role: Anti-parallel diode providing freewheeling path during IGBT turn-off and regenerative braking. Use Value: 500 kA²s I²t rating enables fault ride-through during line-side short circuits without catastrophic failure. | Use Scenario: Variable-frequency drive for 3.3 kV induction motors in mining conveyors and marine thrusters. IC Role / Device Role / Timing Role: Diode conducting reactive current during motor deceleration and supplying reactive power to DC-link capacitors. Use Value: 17.0 K/kW RthJC per diode allows sustained 1200 A conduction at 125°C junction temperature with standard forced-air cooling. |
| Renewable Energy Grid Converters | High-Power UPS Systems |
Use Scenario: Bidirectional grid-tie converter in 3.3 kV solar/wind farm central inverters. IC Role / Device Role / Timing Role: Diode supporting four-quadrant power flow during reactive power injection and grid fault support. Use Value: 6.0 kV isolation voltage meets IEC 61800-5-1 requirements for functional safety in grid-connected equipment. | Use Scenario: Static transfer switch and double-conversion UPS for data center power distribution. IC Role / Device Role / Timing Role: Diode enabling seamless bypass and regeneration during AC mains failure and battery recharge cycles. Use Value: 25 nH stray inductance minimizes voltage spikes during microsecond-scale transfer events, protecting downstream capacitors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage diode module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DD1200S33K2C | No "B3NOSA1" suffix; lacks extended creepage distance (32.2 mm) and enhanced partial discharge performance. | Approved for general industrial use but not certified for rail-specific environmental stress profiles. | Select when cost sensitivity outweighs rail certification requirements and creepage margin is sufficient. |
| DD1000S33K2C | Rated for 1000 A continuous forward current; lower I²t (380 kA²s) and higher RthJC (19.5 K/kW). | Suitable for lower-power 3.3 kV inverters where derating to 800 A is acceptable. | Choose for retrofit or legacy designs where thermal margin exists and peak current demand is ≤1000 A. |
Compared with DD1200S33K2C and DD1000S33K2C, DD1200S33K2CB3NOSA1 delivers higher current density, tighter thermal resistance, and rail-grade isolation - making it optimal for new-build traction systems requiring full EN 50124 compliance and 1200 A continuous operation.
Availability
DD1200S33K2CB3NOSA1 is available at Aetrix Electronics and suitable for rail traction inverters, medium-voltage industrial drives, renewable energy grid converters, and high-power UPS systems requiring stable component supply and long lifecycle support.
Supply support for DD1200S33K2CB3NOSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global R&D and manufacturing infrastructure.
This part belongs to Infineon's PrimePACK™ 3+ family of high-voltage power modules, engineered specifically for 3.3 kV industrial and traction applications demanding high reliability, low losses, and certified isolation.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The DD1200S33K2CB3NOSA1 is rated for continuous operation up to 125°C junction temperature, as confirmed by its Tvj op specification and transient thermal impedance curves. Operation beyond this limit risks accelerated degradation of the AlN isolation layer and solder joint fatigue. Thermal design must ensure junction temperature remains ≤125°C under worst-case load and ambient conditions.
Does this module require external gate resistors for diode operation?
No - the DD1200S33K2CB3NOSA1 contains only diodes and has no gate terminals. Gate resistors apply only to companion IGBTs (e.g., FZ1200R33KF2C). However, the module's 25 nH stray inductance interacts with external snubber networks, so RC snubbers may be needed depending on switching frequency and layout parasitics.
Can this diode module be paralleled with another identical unit?
Parallel operation is not recommended without active current balancing. The module's forward voltage spread (2.80–3.50 V at 1200 A) and thermal coupling limitations mean unbalanced current sharing can exceed ±15% between units. For higher current needs, use a single larger-rated module or consult Infineon Application Note AN2015-04 for forced-balancing techniques.
What torque value should be used for the M4 terminal screws?
The M4 terminal screws require a torque of 1.8–2.1 Nm, as specified in the technical documentation. Under-torquing risks contact resistance rise and localized heating; over-torquing may strip threads or deform terminal lugs. Use a calibrated torque screwdriver and verify torque after thermal cycling during qualification testing.
DD1200S33K2CB3NOSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Module
- Packaging:
- Tray
- Product Status:
- Obsolete
- Diode Configuration:
- 2 Independent
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 3300 V
- Current - Average Rectified (Io) (per Diode):
- 1200A (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 3.5 V @ 1200 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Operating Temperature - Junction:
- -40°C ~ 125°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- A-IHV130-3
DD1200S33K2CB3NOSA1 FAQ
1.How can I place an order for DD1200S33K2CB3NOSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for DD1200S33K2CB3NOSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DD1200S33K2CB3NOSA1 reliable?
The price and inventory of DD1200S33K2CB3NOSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DD1200S33K2CB3NOSA1 is usually 5 days.
3.What payment methods are accepted for DD1200S33K2CB3NOSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DD1200S33K2CB3NOSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DD1200S33K2CB3NOSA1?
DD1200S33K2CB3NOSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DD1200S33K2CB3NOSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DD1200S33K2CB3NOSA1?
For technical support, including DD1200S33K2CB3NOSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DD1200S33K2CB3NOSA1 requirements.
6.How does Aetrix verify that DD1200S33K2CB3NOSA1 is sourced from the original manufacturer or authorized distributors?
All DD1200S33K2CB3NOSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DD1200S33K2CB3NOSA1 meets industry standards.
7.What is the process for return or replacement of DD1200S33K2CB3NOSA1?
All DD1200S33K2CB3NOSA1 units undergo pre-shipment inspection (PSI). If there is an issue with DD1200S33K2CB3NOSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DD1200S33K2CB3NOSA1 part is unused and in its original packaging.
Return procedure for DD1200S33K2CB3NOSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DD1200S33K2CB3NOSA1 Tags
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