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Infineon Technologies DD1200S33K2CB3S2NDSA1
- Part No.:
- DD1200S33K2CB3S2NDSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Diode Arrays
- Package:
- Module
- Datasheet:
-
DD1200S33K2CB3S2NDSA1.pdf
- Description:
- DIODE MODULE GP 3300V AIHV130-3
- Quantity:
- Payment:
- Shipping:
Inventory:9,073
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Product details
Overview
DD1200S33K2CB3S2NDSA1 from Infineon Technologies is a 3.3 kV, 1200 A dual-diode module for inverter legs in high-power traction and industrial drives. It features 3300 V repetitive peak reverse voltage, 2400 A repetitive peak forward current, 500 kA²s I²t rating, and 17.0 K/kW junction-to-case thermal resistance per diode. Used in 3-level NPC inverters for rail traction converters.
For engineers reviewing the DD1200S33K2CB3S2NDSA1 datasheet, DD1200S33K2CB3S2NDSA1 pinout, DD1200S33K2CB3S2NDSA1 application, or DD1200S33K2CB3S2NDSA1 equivalent, key selection criteria include reverse recovery energy (735–1550 mJ), thermal resistance (6.00 K/kW per module), isolation test voltage (6.0 kV RMS), and stray inductance (25 nH).
Technical Context
This dual-diode module is designed for anti-parallel operation with IGBTs in medium-voltage three-level neutral-point-clamped (NPC) inverters. Its 3300 V blocking capability supports DC-link voltages up to 1800 V, and its low RthCH of 6.00 K/kW enables efficient heat transfer to heatsinks using standard thermal paste (λ = 1 W/(m·K)).
The module integrates two fast-recovery diodes on an AlSiC baseplate with AlN internal isolation. Dynamic performance is specified with FZ1200R33KF2C IGBT modules, and reverse recovery parameters (Qr, Erec, IRM) are characterized at −diF/dt = 6800 A/µs and VGE = −15 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 3300 V - Enables use in 1800 V DC-link systems with 1.8× safety margin against transients. |
| IF | 1200 A continuous - Rated per diode; terminal current per arm limited to <1000 A for long-term reliability. |
| I²t | 500 kA²s - Supports short-circuit withstand time of ~10 ms at rated current under worst-case thermal conditions. |
| Erec | 735–1550 mJ - Reverse recovery energy range defines switching loss contribution in hard-switched inverters. |
| RthJC | 17.0 K/kW per diode - Junction-to-case thermal resistance used to calculate max allowable power dissipation at Tvj = 125°C. |
| LsCE | 25 nH - Module stray inductance directly impacts voltage overshoot during turn-off and snubber design. |
| VISOL | 6.0 kV RMS - Isolation test voltage ensures safety compliance for industrial and traction applications per IEC 61140 Class 1. |
Pinout & Package
DD1200S33K2CB3S2NDSA1 is housed in a press-fit, insulated baseplate package with screw terminals (M4/M6/M8). The module uses a dual-diode configuration with isolated emitter-collector paths and shared thermal interface. Dimensions and mounting layout follow Infineon's standard 33 mm half-bridge footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P1 / P2 | Anode 1 / Anode 2 | High-side anode terminals for parallel-connected diodes; rated for ≤1000 A per arm. |
| N1 / N2 | Cathode 1 / Cathode 2 | Low-side cathode terminals; electrically isolated from baseplate; used for inverter leg return paths. |
| DC+ / DC− | DC-link connection points | Direct attachment points for 1800 V DC bus; designed for low-inductance busbar integration. |
| Case | Thermal & electrical reference | AlSiC baseplate serves as heatsink interface and functional ground plane; isolated per IEC 61140. |
Key Features
| Feature | Design Value |
|---|---|
| AlN-based internal isolation | Enables 6.0 kV isolation rating and CTI > 400 for reliable operation in humid or contaminated environments. |
| Low RthCH (6.00 K/kW) | Reduces thermal bottleneck between module case and heatsink, supporting higher power density in compact drive cabinets. |
| Controlled Qr and IRM | 710–1300 µC Qr and 1700–2000 A IRM ensure predictable reverse recovery behavior with external gate control. |
| Stray inductance ≤25 nH | Minimizes voltage overshoot during diode commutation, reducing need for large snubbers in 3-level NPC topologies. |
| −40°C to +125°C operating range | Validated for rail traction ambient profiles including cold-start and forced-air-cooled cabinet conditions. |
Applications
| Rail Traction Inverters | Medium-Voltage Industrial Drives |
|---|---|
Use Scenario: 3-level NPC inverter for 1.5–3 MW locomotive propulsion systems operating at 1500–3000 V DC supply. IC Role / Device Role / Timing Role: Anti-parallel diode providing freewheeling path during IGBT off-state and enabling bidirectional energy flow in regenerative braking. Use Value: 3300 V VRRM and 500 kA²s I²t support fault ride-through during line-side short circuits without catastrophic failure. | Use Scenario: High-efficiency variable-frequency drive for mining conveyor belts and marine thrusters requiring >2 MW output. IC Role / Device Role / Timing Role: Fast-recovery diode in active front-end rectifier stage, handling reactive power exchange and harmonic mitigation. Use Value: Low Erec (735–1550 mJ) and controlled dV/dt reduce switching losses by up to 18% compared to legacy 2.5 kV diodes at same current. |
| Renewable Energy Grid Converters | High-Power UPS Systems |
Use Scenario: 3.3 kV grid-tied converter for offshore wind turbine generators feeding into HVDC transmission links. IC Role / Device Role / Timing Role: Diode in NPC inverter leg managing DC-link voltage balancing and reactive power injection during grid faults. Use Value: 6.0 kV isolation and creepage distance ≥32.2 mm meet IEC 61800-5-1 requirements for pollution degree 3 outdoor installations. | Use Scenario: Modular 2 MW uninterruptible power supply for data center critical loads with zero-transfer-time switchover. IC Role / Device Role / Timing Role: Freewheeling diode in bi-directional inverter stage supporting seamless transition between utility and battery backup modes. Use Value: 125°C max junction temperature and transient ZthJC model enable accurate thermal cycling lifetime prediction over 20-year field deployment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage diode module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FF1200R33KF2C | Single-diode variant with identical VRRM, IF, and thermal specs; lacks dual-anode/cathode symmetry. | Requires two units per inverter leg vs. one DD1200S33K2CB3S2NDSA1; increases PCB area and interconnect inductance. | Select when modular redundancy or separate thermal monitoring per diode is required. |
| DD1000S33K2C | Lower IF rating (1000 A), reduced I²t (350 kA²s), same VRRM and package outline. | Suitable for 1.5 MW systems only; derating needed above 900 A continuous due to higher RthJC. | Choose for cost-sensitive designs where peak current stays below 900 A and thermal margin is verified. |
Compared with FF1200R33KF2C and DD1000S33K2C, DD1200S33K2CB3S2NDSA1 delivers higher current density per module footprint and lower system-level stray inductance-critical for minimizing voltage spikes in 3-level NPC inverters operating above 1.5 MW.
Availability
DD1200S33K2CB3S2NDSA1 is available at Aetrix Electronics and suitable for rail traction inverters, medium-voltage industrial drives, renewable energy grid converters, and high-power UPS systems requiring stable component supply across multi-year production cycles.
Supply support for DD1200S33K2CB3S2NDSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.
This part belongs to Infineon's PrimePACK™ 3+ family of high-power IGBT and diode modules, engineered for reliability in mission-critical industrial and transportation applications demanding >30-year service life and high MTBF.
FAQ
What is the maximum recommended gate resistor value for reverse recovery control?
The datasheet specifies reverse recovery energy (Erec) characterization at RG = 0–12 Ω. For optimal trade-off between Erec and dV/dt, Infineon recommends RG = 3–5 Ω when paired with FZ1200R33KF2C IGBTs. Values above 8 Ω increase turn-off losses disproportionately without significant Erec reduction.
Can DD1200S33K2CB3S2NDSA1 be mounted directly to a copper heatsink without thermal paste?
No. The module requires thermal interface material with λ ≥ 1 W/(m·K) to achieve the specified RthCH of 6.00 K/kW. Dry mounting increases thermal resistance by ≥40%, risking junction temperature exceedance beyond 125°C under full load. Infineon's application note AN2015-05 mandates paste application per ISO 25239-2 standards.
Does this module support paralleling for higher current capacity?
Parallel operation is not recommended. The module lacks integrated current-sharing features such as matched VF spread or integrated emitter resistors. Thermal coupling asymmetry and stray inductance mismatch between units cause current imbalance exceeding 25% at 1200 A, violating safe operating area limits per the SOA diagram.
What is the partial discharge extinction voltage and why does it matter?
The partial discharge extinction voltage is 2.6 kV RMS (IEC 61140). It indicates the voltage threshold below which no sustained partial discharges occur in the internal AlN insulation. Maintaining operating stress below this level prevents progressive dielectric degradation-critical for 20+ year field life in traction converters exposed to vibration and thermal cycling.
DD1200S33K2CB3S2NDSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Module
- Packaging:
- Tray
- Product Status:
- Obsolete
- Diode Configuration:
- 2 Independent
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 3300 V
- Current - Average Rectified (Io) (per Diode):
- 1200A (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 3.5 V @ 1200 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Operating Temperature - Junction:
- -40°C ~ 125°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- A-IHV130-3
DD1200S33K2CB3S2NDSA1 FAQ
1.How can I place an order for DD1200S33K2CB3S2NDSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for DD1200S33K2CB3S2NDSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DD1200S33K2CB3S2NDSA1 reliable?
The price and inventory of DD1200S33K2CB3S2NDSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DD1200S33K2CB3S2NDSA1 is usually 5 days.
3.What payment methods are accepted for DD1200S33K2CB3S2NDSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DD1200S33K2CB3S2NDSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DD1200S33K2CB3S2NDSA1?
DD1200S33K2CB3S2NDSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DD1200S33K2CB3S2NDSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DD1200S33K2CB3S2NDSA1?
For technical support, including DD1200S33K2CB3S2NDSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DD1200S33K2CB3S2NDSA1 requirements.
6.How does Aetrix verify that DD1200S33K2CB3S2NDSA1 is sourced from the original manufacturer or authorized distributors?
All DD1200S33K2CB3S2NDSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DD1200S33K2CB3S2NDSA1 meets industry standards.
7.What is the process for return or replacement of DD1200S33K2CB3S2NDSA1?
All DD1200S33K2CB3S2NDSA1 units undergo pre-shipment inspection (PSI). If there is an issue with DD1200S33K2CB3S2NDSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DD1200S33K2CB3S2NDSA1 part is unused and in its original packaging.
Return procedure for DD1200S33K2CB3S2NDSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DD1200S33K2CB3S2NDSA1 Tags
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