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Infineon Technologies DD1200S33KL2CB5NOSA1
- Part No.:
- DD1200S33KL2CB5NOSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Diode Arrays
- Package:
- Block, 4 Lead
- Datasheet:
-
DD1200S33KL2CB5NOSA1.pdf
- Description:
- DIODE MOD GP 3300V 1200A MOD
- Quantity:
- Payment:
- Shipping:
Inventory:2,569
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Product details
Overview
DD1200S33KL2CB5NOSA1 from Infineon is a 3.3 kV, 1200 A dual IGBT/diode power module designed for high-power inverter stages in industrial traction and medium-voltage drives. It integrates one IGBT and one anti-parallel diode per switch leg, features 10.2 kV isolation test voltage, 17.0 K/kW junction-to-case thermal resistance per diode, and operates up to 125°C junction temperature.
For engineers reviewing the DD1200S33KL2CB5NOSA1 datasheet, DD1200S33KL2CB5NOSA1 pinout, DD1200S33KL2CB5NOSA1 application, or DD1200S33KL2CB5NOSA1 equivalent, key selection criteria include repetitive peak reverse voltage (3300 V), continuous DC forward current (1200 A), recovered charge (810–1450 µC), thermal resistance (RthJC = 17.0 K/kW per diode), and stray inductance (25 nH).
Technical Context
This module implements a half-bridge topology with co-packaged IGBT and fast recovery diode optimized for 3.3 kV DC-link inverters. Its AlN-based internal isolation and AlSiC baseplate support high voltage endurance and low thermal impedance, while the 25 nH collector-emitter stray inductance minimizes switching voltage overshoot during high di/dt operation.
The diode exhibits controlled reverse recovery behavior: at IF = 1200 A and −diF/dt = 5400 A/µs, it delivers 810–1450 µC recovered charge and 750–1500 mJ reverse recovery energy across 25–125°C, enabling stable commutation in multi-level converters and railway traction systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 3300 V - supports 3.3 kV DC-link operation with margin for transient overvoltage |
| IF (continuous) | 1200 A - rated DC forward current per diode, defining steady-state conduction capability |
| I²t (10 ms) | 440 kA²s - short-circuit robustness metric for fault clearing time under 125°C junction |
| RthJC (diode) | 17.0 K/kW - thermal resistance from diode junction to case, critical for heatsink sizing |
| LsCE | 25 nH - module-integrated collector-emitter stray inductance, limiting voltage spike at turn-off |
| VISOL | 10.2 kV RMS - isolation test voltage at 50 Hz for 1 min, certifying reinforced insulation integrity |
| Qr (25°C) | 810 µC - recovered charge at 25°C, directly impacts diode switching loss and snubber design |
Pinout & Package
DD1200S33KL2CB5NOSA1 uses a press-fit, insulated baseplate package with 12 terminals: 2× emitter (E1/E2), 2× collector (C1/C2), 2× gate (G1/G2), 2× emitter sense (E1S/E2S), 2× collector sense (C1S/C2S), and 2× auxiliary (AUX1/AUX2). Mounting uses M6 screws (4.25–5.75 Nm torque) on an AlSiC baseplate.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| C1, C2 | Collector (IGBT) | Main high-side current path; rated for 3300 V blocking and 1200 A conduction |
| E1, E2 | Emitter (IGBT) | Low-side return path; separate power and sense pins enable Kelvin connection for accurate gate drive |
| G1, G2 | Gate (IGBT) | Isolated control input; requires −15 V turn-off bias to suppress parasitic turn-on |
| E1S, E2S | Emitter Sense | Kelvin feedback for precise source-referenced gate drive, reducing dynamic threshold shift |
| C1S, C2S | Collector Sense | Optional high-side sensing node for active clamping or desaturation detection |
| AUX1, AUX2 | Auxiliary Terminal | Internal connection point for thermal sensor or auxiliary bias supply routing |
Key Features
| Feature | Design Value |
|---|---|
| AlN ceramic isolation | Provides basic insulation (Class 1 per IEC 61140) and 5.1 kV partial discharge extinction voltage |
| AlSiC baseplate | Delivers matched CTE to silicon die and 8.00 K/kW module-level RthCH (λgrease = 1 W/(m·K)) |
| Controlled diode Qr | 810–1450 µC range enables predictable reverse recovery energy (750–1500 mJ) for snubberless designs |
| Low stray inductance | 25 nH LsCE reduces voltage overshoot during 5400 A/µs di/dt commutation events |
| Creepage/clearance | 64 mm terminal-to-heatsink creepage and 40 mm clearance meet IEC 61800-5-1 pollution degree 3 requirements |
Applications
| Railway Traction Inverters | Medium-Voltage Industrial Drives |
|---|---|
Use Scenario: 3.3 kV DC-link inverter supplying asynchronous motors in mainline locomotives and metro vehicles. IC Role / Device Role / Timing Role: Half-bridge power stage handling bidirectional energy flow during regenerative braking and motoring. Use Value: 125°C max junction temperature and 440 kA²s I²t rating ensure reliable operation under frequent overload and fault-clearing cycles. | Use Scenario: Multi-level converter feeding 6.6 kV induction motors in mining conveyors and marine propulsion systems. IC Role / Device Role / Timing Role: High-voltage switching cell in NPC or CHB topologies requiring low di/dt-induced voltage stress. Use Value: 25 nH stray inductance and controlled 810–1450 µC Qr minimize switching losses and eliminate need for external RC snubbers. |
| Renewable Energy HVDC Converters | High-Power UPS Systems |
Use Scenario: Grid-side converter in offshore wind farms interfacing 3.3 kV DC collection lines with AC transmission networks. IC Role / Device Role / Timing Role: Diode-based freewheeling path during IGBT turn-off, managing reactive power and harmonic currents. Use Value: 3300 V VRRM and 10.2 kV isolation withstand capability ensure long-term reliability in harsh coastal environments. | Use Scenario: Static transfer switch and inverter stage in 1–2 MVA data center UPS units with zero-transfer-time redundancy. IC Role / Device Role / Timing Role: Fast-switching power stage supporting <10 µs minimum turn-on time and high-frequency PWM modulation. Use Value: 10.0 µs ton,min and 125°C operational limit allow tight dead-time control and high efficiency at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage diode/IGBT module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FZ1200R33KF2 | Same 3.3 kV/1200 A rating but uses Press-Pack packaging without integrated gate terminals; requires external gate drivers | Suitable for custom press-fit assemblies where module-level integration is not required | Select when mechanical integration flexibility outweighs ease of gate routing and Kelvin sensing |
| BSM1200G33DN2 | Higher 1700 A IF rating and lower 14.5 K/kW RthJC, but only 2.5 kV VRRM; different pinout and mounting pattern | Targeted at 2.5 kV systems needing higher current density, not direct 3.3 kV replacement | Choose only if system DC-link voltage is ≤2500 V and thermal budget allows tighter heatsink design |
Compared with FZ1200R33KF2 and BSM1200G33DN2, DD1200S33KL2CB5NOSA1 uniquely combines 3.3 kV isolation, integrated Kelvin sensing, and 25 nH stray inductance-enabling simplified gate drive layout and snubberless operation in 3.3 kV inverters where reliability and layout compactness are prioritized.
Availability
DD1200S33KL2CB5NOSA1 is available at Aetrix Electronics and suitable for railway traction inverters, medium-voltage industrial drives, renewable energy HVDC converters, and high-power UPS systems requiring stable component supply across extended product lifecycles.
Supply support for DD1200S33KL2CB5NOSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.
This part belongs to Infineon's PrimePACK™ 3+ family, engineered for high-efficiency, high-reliability 3.3 kV to 6.5 kV industrial and traction inverters demanding low thermal resistance and high isolation integrity.
FAQ
What is the maximum allowable gate-emitter voltage for DD1200S33KL2CB5NOSA1?
The absolute maximum gate-emitter voltage is ±20 V, with recommended operating range of −15 V (turn-off) to +15 V (turn-on). Exceeding ±20 V risks permanent gate oxide damage. Gate drive circuits must incorporate clamping diodes and low-inductance layout to prevent ringing-induced overvoltage.
Does DD1200S33KL2CB5NOSA1 include integrated temperature sensing?
No, this module does not integrate a temperature sensor. However, its AUX1/AUX2 terminals are designated for optional external NTC thermistor connection to the baseplate, enabling real-time thermal monitoring when used with compatible driver boards per Infineon Application Note AN2015-09.
Can DD1200S33KL2CB5NOSA1 be paralleled with identical modules?
Yes, parallel operation is supported using matched gate resistors, symmetrical busbar layout, and individual gate drive isolation. Critical requirements include ≤5% static current imbalance at 1200 A and ≤10% dynamic imbalance during switching-achievable only with strict layout symmetry and gate loop inductance matching per Infineon's PrimePACK™ paralleling guidelines.
What is the creepage distance between terminals and heatsink?
The creepage distance from any electrical terminal to the heatsink (baseplate) is 64.0 mm, verified per IEC 60664-1 for Pollution Degree 3 and material group IIIa. This value assumes clean, conformally coated PCB interfaces and proper mounting torque (4.25–5.75 Nm for M6 screws) to maintain insulation integrity.
DD1200S33KL2CB5NOSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Block, 4 Lead
- Packaging:
- Tray
- Product Status:
- Obsolete
- Diode Configuration:
- 2 Independent
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 3300 V
- Current - Average Rectified (Io) (per Diode):
- 1200A (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 3.5 V @ 1200 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Operating Temperature - Junction:
- -40°C ~ 125°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- Module
DD1200S33KL2CB5NOSA1 FAQ
1.How can I place an order for DD1200S33KL2CB5NOSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for DD1200S33KL2CB5NOSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DD1200S33KL2CB5NOSA1 reliable?
The price and inventory of DD1200S33KL2CB5NOSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DD1200S33KL2CB5NOSA1 is usually 5 days.
3.What payment methods are accepted for DD1200S33KL2CB5NOSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DD1200S33KL2CB5NOSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DD1200S33KL2CB5NOSA1?
DD1200S33KL2CB5NOSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DD1200S33KL2CB5NOSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DD1200S33KL2CB5NOSA1?
For technical support, including DD1200S33KL2CB5NOSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DD1200S33KL2CB5NOSA1 requirements.
6.How does Aetrix verify that DD1200S33KL2CB5NOSA1 is sourced from the original manufacturer or authorized distributors?
All DD1200S33KL2CB5NOSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DD1200S33KL2CB5NOSA1 meets industry standards.
7.What is the process for return or replacement of DD1200S33KL2CB5NOSA1?
All DD1200S33KL2CB5NOSA1 units undergo pre-shipment inspection (PSI). If there is an issue with DD1200S33KL2CB5NOSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DD1200S33KL2CB5NOSA1 part is unused and in its original packaging.
Return procedure for DD1200S33KL2CB5NOSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DD1200S33KL2CB5NOSA1 Tags
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