Infineon Technologies DD200S33K2CC1NOSA1

Overview

DD200S33K2CC1NOSA1 from Infineon Technologies is a 3.3 kV, 200 A dual-diode module for inverter applications in high-power traction and industrial drives. It features 3300 V repetitive peak reverse voltage, 400 A repetitive peak forward current, 14.0 kA²s I²t rating, and 108 K/kW junction-to-case thermal resistance per diode. Designed for 125°C maximum operating junction temperature, it supports high-voltage DC link snubbing and freewheeling in 3-level NPC inverters.

For engineers reviewing the DD200S33K2CC1NOSA1 datasheet, DD200S33K2CC1NOSA1 pinout, DD200S33K2CC1NOSA1 application, or DD200S33K2CC1NOSA1 equivalent, key selection criteria include reverse recovery energy (125–255 mJ), peak reverse recovery current (275–325 A), thermal resistance (RthJC = 108 K/kW per diode), isolation test voltage (6.0 kV RMS), and stray inductance (58 nH).

Technical Context

This module integrates two fast-recovery, soft-switching anti-parallel diodes optimized for use with FF200R33KF2C IGBT modules in 3.3 kV three-level neutral-point-clamped (NPC) inverters. Its dynamic behavior is characterized by low Qr (120–220 µC) and Erec (125–255 mJ) at IF = 200 A, -diF/dt = 1100 A/µs, and VR = 1800 V.

The AlN-based internal isolation and AlSiC baseplate provide 6.0 kV isolation test voltage (50 Hz, 1 min), 2.6 kV partial discharge extinction voltage, and creepage/clearance distances of 32.2 mm / 19.1 mm. Thermal performance is defined by RthJC = 108 K/kW per diode and RthCH = 33.0 K/kW per diode (λgrease = 1 W/(m·K)).

Key Specifications

Pinout & Package

DD200S33K2CC1NOSA1 is housed in a press-fit, isolated 62 mm x 107 mm module package with copper baseplate and AlN isolation. Electrical terminals are arranged as two independent diode pairs: each diode has dedicated anode (A1, A2) and cathode (K1, K2) terminals, plus mounting screw holes (M6) and terminal screws (M5).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage diode module applications.

Compared with DD200S33K2C and DD1200S33K2C, DD200S33K2CC1NOSA1 delivers tighter Qr/Erec consistency across temperature, improved isolation certification, and optimized thermal resistance for 200 A-rated systems-making it the preferred choice for new 3.3 kV traction and industrial drive platforms.

Availability

DD200S33K2CC1NOSA1 is available at Aetrix Electronics and suitable for rail traction inverters, industrial medium-voltage drives, renewable energy grid converters, and high-power UPS systems requiring stable component supply and long lifecycle support.

Supply support for DD200S33K2CC1NOSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This part belongs to Infineon's PrimePACK™ 3+ high-voltage diode module family, engineered specifically for 3.3 kV three-level NPC and active NPC topologies in traction, grid, and heavy industrial applications.

FAQ

What is the maximum recommended gate-emitter voltage for driving the companion IGBT module?

DD200S33K2CC1NOSA1 is a diode-only module and has no gate terminals. It is designed for pairing with Infineon's FF200R33KF2C IGBT module, which specifies ±20 V maximum gate-emitter voltage. Gate drive design must follow FF200R33KF2C's datasheet recommendations, including negative turn-off bias (–15 V) to ensure reliable diode commutation.

Does this module require external snubbers in 3.3 kV NPC inverters?

No external RC snubbers are required when used with matched FF200R33KF2C IGBTs and proper gate resistors (RGon ≈ 10–30 Ω). The module's 58 nH stray inductance and soft recovery characteristics (Erec ≤ 255 mJ, IRM ≤ 325 A) limit voltage overshoot to within safe operating area limits under typical 3.3 kV switching conditions.

What thermal interface material thickness is validated for RthCH = 33.0 K/kW per diode?

Infineon validates RthCH = 33.0 K/kW per diode using 100 µm nominal bond line thickness of thermal grease with λ = 1 W/(m·K). Thinner layers (<70 µm) increase risk of voids and contact resistance; thicker layers (>150 µm) degrade conductive heat transfer. Mounting torque must be maintained at 4.25–5.75 Nm (M6 screws) to ensure uniform pressure distribution.

Can DD200S33K2CC1NOSA1 be paralleled with another unit for 400 A operation?

Parallel operation is not recommended. The module lacks integrated current-sharing features such as matched VF dispersion or integrated emitter resistors. Dynamic imbalance due to parameter spread (VF: ±0.7 V, Qr: ±100 µC) and layout asymmetry would cause unequal current sharing and thermal runaway. For 400 A systems, use the DD400S33K2C variant instead.