Infineon Technologies DD242S10KKHPSA1

Overview

DD242S10KKHPSA1 from Infineon Technologies (formerly EUPEC) is a 1000 V, 240 A average forward current dual common-cathode press-pack thyristor module designed for high-power phase-controlled rectification and AC/DC conversion in industrial medium-voltage drives and HVDC valve stacks. It features 1.55 V max forward voltage at 800 A, 0.15 °C/W max thermal resistance per arm, and 9300 A non-repetitive surge current rating.

For engineers reviewing the DD242S10KKHPSA1 datasheet, DD242S10KKHPSA1 pinout, DD242S10KKHPSA1 application, or DD242S10KKHPSA1 equivalent, key selection criteria include repetitive peak reverse voltage (1000 V), RMS forward current (410 A), junction-to-case thermal resistance (0.15 °C/W per arm), and pressure-contact Si-pellet construction for forced-cooled high-reliability power conversion systems.

Technical Context

This dual-arm thyristor module operates in phase-controlled switching mode with gate-triggered conduction and natural commutation. Its 1.1 V threshold voltage and 0.5 mΩ slope resistance define low-conduction-loss behavior under high DC-link currents, while the 120 µAs recovered charge and 98 A peak reverse recovery current characterize turn-off dynamics under high di/dt conditions (up to 200 A/µs).

Thermal performance is defined by transient ZthJC analytical elements (7-term Foster network) and steady-state RthJC = 0.15 °C/W per arm, enabling precise junction temperature prediction in forced-air or liquid-cooled heatsink assemblies. The module supports both common-anode and common-cathode configurations per customer request.

Key Specifications

Pinout & Package

DD242S10KKHPSA1 is a press-pack dual-thyristor module with two independent arms sharing a common cathode terminal. It uses pressure-contact silicon pellets mounted on an AlN (aluminum nitride) ceramic base, requiring mechanical clamping (M2 torque: 12 Nm ±10%) between copper heatsinks. No solder or wire bonds are used.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power thyristor applications.

Compared with M572-1000-240 and CM1200DY-24H, DD242S10KKHPSA1 delivers superior thermal robustness (0.15 °C/W vs. ≥0.18 °C/W), higher surge tolerance (9300 A), and field-proven reliability in press-pack valve stacks-making it the preferred choice for mission-critical medium-voltage power conversion.

Availability

DD242S10KKHPSA1 is available at Aetrix Electronics and suitable for industrial medium-voltage drives, grid-scale HVDC converter valves, high-power electrolysis rectifiers, and DC arc furnace power supplies requiring stable component supply across multi-year production programs.

Supply support for DD242S10KKHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global R&D and manufacturing facilities.

DD242S10KKHPSA1 belongs to Infineon's high-power thyristor product line, engineered specifically for line-commutated converter applications in energy transmission, heavy industry, and electrochemical processing.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies a maximum case temperature (TC) of +100°C for 240 A average forward current operation. At +94°C case temperature, the rated IFAVM increases to 261 A. Exceeding +100°C reduces current derating and risks accelerated aging of the AlN ceramic isolation layer and pressure-contact interfaces.

Does DD242S10KKHPSA1 require forced cooling?

Yes-this module must be mounted between actively cooled copper heatsinks with specified clamping torque (M2: 12 Nm ±10%). Natural convection is insufficient due to its 0.15 °C/W RthJC and 410 A IFRMSM rating; typical designs use liquid-cooled cold plates or high-velocity forced-air ducting to maintain TC ≤ 100°C under full load.

Can this module be used in inverter mode with forced commutation?

No-DD242S10KKHPSA1 is a semi-controlled thyristor, not a fully controllable device like an IGBT or MOSFET. It cannot be turned off by gate signal alone and relies on line commutation (current zero-crossing). Forced commutation requires auxiliary circuits and is not supported by its internal structure or datasheet-rated parameters.

What gate drive requirements apply to each thyristor arm?

Each gate (G1/G2) requires a minimum trigger pulse of 1.5 V and 100 mA with <1 µs rise time. Recommended gate resistors are 10–22 Ω in series with pulse transformers to limit di/dt-induced false triggering. Gate-cathode voltage must not exceed ±5 V during non-conduction to prevent latch-up or gate oxide damage.