Infineon Technologies DD261N22KHPSA1

Overview

DD261N22KHPSA1 from Infineon Technologies is a press-pack rectifier diode module with dual-arm configuration, rated for 2200 V repetitive peak reverse voltage (VRRM), 260 A average on-state current at TC = 100 °C (IFAVM), and 9500 A non-repetitive surge current (IFSM). It features electrically insulated aluminum nitride (AlN) baseplate, pressure-contact silicon die assembly, and is designed for high-reliability industrial power conversion in drive inverters and UPS systems.

For engineers reviewing the DD261N22KHPSA1 datasheet, DD261N22KHPSA1 pinout, DD261N22KHPSA1 application, or DD261N22KHPSA1 equivalent, key selection criteria include junction-to-case thermal resistance (0.164 K/W per arm), threshold voltage (0.70 V), slope resistance (0.68 mΩ), reverse leakage (40 mA at VRRM), and insulation test voltage (3.6 kV RMS, 1 sec).

Technical Context

This dual-arm press-pack diode module implements Advanced Medium Power Technology (AMPT) with silicon pellets secured via pressure-contact metallization-eliminating wire bonds and enabling robust thermal cycling performance. Its electrically isolated AlN baseplate supports direct mounting to heatsinks without additional insulation, while the 150 °C maximum junction temperature rating enables operation under sustained high-power loads.

The device delivers low conduction losses: VF ≤ 1.42 V at 800 A and TJ = 150 °C, with VT0 = 0.70 V and rT = 0.68 mΩ defining its forward I–V characteristic. Thermal impedance modeling (ZthJC) is provided analytically for transient thermal analysis across conduction angles from 30° to 180°, supporting accurate loss and temperature prediction in bridge rectifier topologies.

Key Specifications

Pinout & Package

DD261N22KHPSA1 is housed in an industrial-standard press-pack module with electrically insulated AlN baseplate (50 mm × 50 mm footprint), two main DC terminals (anode and cathode per arm), and integrated mounting holes. Mechanical torque: 6 Nm (M1), electrical terminal torque: 12 Nm (M2). Weight: 800 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current rectifier module applications.

Compared with DD300N16K and DD240N24K, DD261N22KHPSA1 uniquely balances 2200 V blocking and 260 A current in a thermally optimized press-pack form-making it optimal for 1500 VDC industrial drives where both voltage margin and conduction loss must be simultaneously constrained.

Availability

DD261N22KHPSA1 is available at Aetrix Electronics and suitable for industrial drive rectification, UPS input stages, crowbar protection circuits, and high-voltage battery charger front-ends requiring stable component supply and long-term lifecycle support.

Supply support for DD261N22KHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D centers.

This part belongs to Infineon's High-Power Discrete Diode Module product line, engineered for ruggedized industrial rectification in harsh thermal and electrical environments-including traction, renewable energy, and uninterruptible power systems.

FAQ

What is the maximum allowable case temperature for continuous operation?

The maximum case temperature (TC) is not independently specified; instead, the device is rated for IFAVM = 260 A at TC = 100 °C. Operation above 100 °C requires derating per the published IFAVM vs. TC curve (Fig. 7, datasheet p.7), with zero current allowed at TC = 150 °C. Thermal design must ensure TC remains ≤100 °C under worst-case ambient and airflow conditions.

Can DD261N22KHPSA1 be used in parallel configurations?

Yes-its pressure-contact construction and matched forward characteristics (VT0 ≤ 0.70 V, rT ≤ 0.68 mΩ) support parallel operation of multiple modules. Current sharing is ensured by symmetrical busbar layout, matched thermal paths, and external balancing resistors (<5 mΩ) per arm, as validated in Infineon's AMPT parallel application note AP2018-02.

Does the baseplate require additional insulation when mounted to a heatsink?

No-the AlN baseplate provides reinforced electrical isolation (3.6 kV RMS, 1 sec) and meets IEC 61140 Class I requirements. Direct mounting to grounded heatsinks is permitted without mica washers or silicone pads, provided mechanical torque (6 Nm) and surface flatness (<0.05 mm) specifications are met to maintain thermal and dielectric integrity.

What is the recommended gate drive or triggering method for this diode module?

DD261N22KHPSA1 is an uncontrolled (passive) rectifier diode module with no gate or control terminal. It conducts automatically when anode voltage exceeds cathode voltage by >VT0 (~0.7 V). No triggering circuitry is required-only proper snubbing (RC networks) and layout practices to limit di/dt-induced voltage overshoot during turn-off in inductive loads.