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Infineon Technologies DD500S33HE3BOSA1
- Part No.:
- DD500S33HE3BOSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Diode Arrays
- Package:
- Module
- Datasheet:
-
DD500S33HE3BOSA1.pdf
- Description:
- DIODE MODULE GP 3300V AGIHVB1303
- Quantity:
- Payment:
- Shipping:
Inventory:8,895
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Product details
Overview
DD500S33HE3BOSA1 from Infineon Technologies is a 3300 V, 500 A rated high-power silicon diode module in IHM-B housing, designed for anti-parallel operation with IGBTs in medium-voltage inverter legs. It delivers low forward voltage (2.75 V typ. at 500 A, 125°C), low switching losses (550 mJ rec. energy typ. at 500 A), and high thermal cycling capability via AlSiC baseplate - deployed in traction drives, wind turbine converters, and UPS systems.
For engineers reviewing the DD500S33HE3BOSA1 datasheet, DD500S33HE3BOSA1 pinout, DD500S33HE3BOSA1 application, or DD500S33HE3BOSA1 equivalent, key selection criteria include repetitive peak reverse voltage (3300 V), DC forward current rating (500 A), junction-to-case thermal resistance (43.1 K/kW), isolation test voltage (6.0 kV RMS), and recovery charge (450 µC typ. at 125°C).
Technical Context
This diode module operates as a freewheeling/anti-parallel device in high-voltage, high-current three-phase inverters. Its design targets stable conduction under 500 A DC and 1000 A repetitive peak forward current, with robust reverse recovery performance (IRM = 600 A, Qr = 450 µC) at 150°C junction temperature and 1500 A/µs diF/dt.
The IHM-B package integrates an isolated AlSiC baseplate (CTI > 600, creepage 32.2 mm) enabling direct mounting to liquid-cooled heatsinks. Dynamic behavior is characterized with FZ500R33HE3 IGBT modules, requiring coordinated gate drive timing to minimize commutation stress and oscillation due to stray inductance (18 nH).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 3300 V - Withstands repetitive reverse voltage up to 3300 V, enabling use in 3.3 kV-class medium-voltage converters. |
| IF (nom) | 500 A - Continuous DC forward current rating defines steady-state thermal design basis for heatsink sizing. |
| IFRM | 1000 A - Supports short-duration overload conditions (1 ms pulse), critical for motor startup and fault ride-through. |
| VF (typ) | 2.75 V @ 500 A, 125°C - Low conduction loss directly reduces power dissipation and improves system efficiency at rated load. |
| Erec (typ) | 550 mJ @ 500 A, 150°C - Quantifies reverse recovery energy per pulse; lower value eases snubber design and reduces IGBT turn-off stress. |
| RthJC | 43.1 K/kW - Junction-to-case thermal resistance enables accurate thermal modeling when paired with heatsink RthCH (16.5 K/kW). |
| VISOL | 6.0 kV RMS - 1-minute AC isolation test voltage ensures safety compliance in industrial and traction applications with high ground potential differences. |
Pinout & Package
DD500S33HE3BOSA1 is housed in the IHM-B (Insulated Hybrid Module – B type) package: a press-fit, baseplate-isolated, double-sided cooled module with M6 mounting screws and M4/M8 terminal screws. The package features AlSiC baseplate, CTI > 600 housing, and 19.1 mm clearance between terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (A) | Forward current entry point | Connected to DC-link positive or phase leg output; carries full load current during conduction. |
| Cathode (K) | Forward current exit point | Connected to IGBT collector or DC-link negative; forms anti-parallel path with complementary switch. |
| Isolated Baseplate | Thermal & electrical reference plane | Electrically isolated (6.0 kV RMS) and thermally conductive interface for heatsink attachment; requires torque-controlled M6 mounting (4.25–5.75 Nm). |
Key Features
| Feature | Design Value |
|---|---|
| High DC stability | Rated VCE(D) = 2100 V DC blocking capability ensures long-term reliability under sustained high-voltage bias. |
| Low switching losses | Typical Erec = 550 mJ at 500 A/150°C reduces heat generation during commutation and eases thermal management. |
| Enhanced thermal cycling endurance | AlSiC baseplate provides superior CTE match to Si chips and >10,000 cycles lifetime under ΔTj = 100 K. |
| High isolation integrity | CTI > 600 and 32.2 mm creepage distance support operation in humid, contaminated, or high-altitude environments. |
Applications
| Medium Voltage Drives | Traction Inverters |
|---|---|
Use Scenario: Variable-speed control of induction motors in mining conveyors and marine propulsion systems operating at 2.5–3.3 kV DC-link. IC Role / Device Role / Timing Role: Anti-parallel freewheeling diode in 3-level NPC or active NPC inverter legs, conducting during IGBT off-time and handling regenerative energy. Use Value: 3300 V VRRM and 1000 A IFRM enable direct integration without series stacking, reducing system complexity and parasitic inductance. |
Use Scenario: Traction converter for mainline locomotives and high-speed rail, where reliability under shock, vibration, and wide ambient temperature (-40°C to +70°C) is mandatory. IC Role / Device Role / Timing Role: Reverse-conducting path synchronized with IGBT switching in dual two-level or multilevel topologies; handles braking energy return to overhead line. Use Value: AlSiC baseplate and 150°C max Tvj rating ensure >20-year field life under daily thermal cycling (ΔTj ≥ 80 K). |
| Wind Turbine Converters | Industrial UPS Systems |
Use Scenario: Full-scale back-to-back converters in multi-MW offshore wind turbines, exposed to salt mist, humidity, and grid fault transients. IC Role / Device Role / Timing Role: DC-link clamping and reactive power compensation diode in LCL-filtered grid-side inverters, conducting during reactive current flow. Use Value: 6.0 kV isolation and CTI > 600 prevent tracking failure in coastal environments; low Qr minimizes voltage overshoot during fast di/dt events. |
Use Scenario: Double-conversion UPS for data centers and semiconductor fabs, requiring zero-transfer-time backup and harmonic mitigation. IC Role / Device Role / Timing Role: Output rectifier and inverter-leg freewheeling element in 3.3 kV-rated modular power stacks, supporting bidirectional energy flow. Use Value: 500 A continuous rating and 43.1 K/kW RthJC allow compact thermal design with forced-air or liquid cooling, meeting <15 ms switchover time requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage diode module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FZ500R33HE3 | IGBT companion module (not diode); shares same IHM-B footprint, thermal specs, and gate drive compatibility but provides active switching instead of passive conduction. | Used in same inverter leg but as the controlled switch; requires coordinated gate timing and snubber design with DD500S33HE3BOSA1. | Select when building matched IGBT–diode half-bridge pairs; not a functional replacement for the diode itself. |
| DD600S33K3_B2 | Same VRRM (3300 V) and higher IF (600 A), but uses older IHM-A package with lower thermal cycling capability (Cu baseplate vs. AlSiC) and higher VF (2.95 V typ.). | Suitable for less demanding industrial drives where cost sensitivity outweighs lifetime requirements; not recommended for traction or wind. | Choose only if 600 A rating is required and thermal cycling >5,000 cycles is not mandated by application standards. |
Compared with FZ500R33HE3, DD500S33HE3BOSA1 provides passive unidirectional conduction with lower conduction loss but no gate control; compared with DD600S33K3_B2, it trades 100 A current headroom for significantly improved thermal cycling endurance and lower switching loss - critical for mission-critical traction and renewable energy systems.
Availability
DD500S33HE3BOSA1 is available at Aetrix Electronics and suitable for medium voltage drives, traction inverters, and wind turbine converters requiring stable component supply, long-lifecycle assurance, and traceable sourcing from Infineon's qualified production lines.
Supply support for DD500S33HE3BOSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy infrastructure markets.
DD500S33HE3BOSA1 belongs to Infineon's High-Voltage Diode Module product line, engineered specifically for ruggedized, high-efficiency inverters in renewable energy, rail, and heavy industry where reliability under extreme thermal and electrical stress is non-negotiable.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The DD500S33HE3BOSA1 supports continuous operation up to 150°C junction temperature, as confirmed by its Tvj op rating and thermal characterization curves (ZthJC). Derating is required above this limit; operation beyond 150°C risks accelerated degradation of the AlSiC–silicon interface and solder layer fatigue.
Can this diode module be used without a heatsink?
No. With a nominal power dissipation of ~1.4 kW at 500 A and 2.75 V VF, the module requires active thermal management. The specified RthJC (43.1 K/kW) and RthCH (16.5 K/kW) assume direct mounting to a properly torqued, greased heatsink - operation without one would exceed 200°C junction temperature within seconds.
Does DD500S33HE3BOSA1 require external snubbers?
Snubbers are recommended for hard-switching topologies due to its 18 nH stray inductance and 600 A peak reverse recovery current. While optimized for low Erec, uncontrolled di/dt can cause voltage overshoot exceeding VRRM; RC or RCD networks suppress ringing and protect the complementary IGBT.
What is the meaning of "BOSA1" in the part number?
"BOSA1" is Infineon's internal assembly code indicating the specific manufacturing lot, revision level, and packaging configuration - including IHM-B housing, AlSiC baseplate, standard terminal plating, and compliance with RoHS and REACH. It does not denote a functional variant but confirms full specification compliance per V3.2 datasheet.
DD500S33HE3BOSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Module
- Packaging:
- Tray
- Product Status:
- Active
- Diode Configuration:
- 2 Independent
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 3300 V
- Current - Average Rectified (Io) (per Diode):
- 500A (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 3.85 V @ 500 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Operating Temperature - Junction:
- -40°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- AG-IHVB130-3
DD500S33HE3BOSA1 FAQ
1.How can I place an order for DD500S33HE3BOSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for DD500S33HE3BOSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DD500S33HE3BOSA1 reliable?
The price and inventory of DD500S33HE3BOSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DD500S33HE3BOSA1 is usually 5 days.
3.What payment methods are accepted for DD500S33HE3BOSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DD500S33HE3BOSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DD500S33HE3BOSA1?
DD500S33HE3BOSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DD500S33HE3BOSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DD500S33HE3BOSA1?
For technical support, including DD500S33HE3BOSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DD500S33HE3BOSA1 requirements.
6.How does Aetrix verify that DD500S33HE3BOSA1 is sourced from the original manufacturer or authorized distributors?
All DD500S33HE3BOSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DD500S33HE3BOSA1 meets industry standards.
7.What is the process for return or replacement of DD500S33HE3BOSA1?
All DD500S33HE3BOSA1 units undergo pre-shipment inspection (PSI). If there is an issue with DD500S33HE3BOSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DD500S33HE3BOSA1 part is unused and in its original packaging.
Return procedure for DD500S33HE3BOSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DD500S33HE3BOSA1 Tags
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BAV99,215
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BAV99LT1G
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