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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Diode Arrays

Infineon Technologies DD800S17H4B2BOSA2

Name: DD800S17H4B2BOSA2
Brand: Infineon Technologies
SKU: DD800S17H4B2BOSA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DD800S17H4B2BOSA2

Manufacturer:: Infineon Technologies

Category:: Diode Arrays

Package:: Module

Datasheet:: DD800S17H4B2BOSA2.pdf

Description:: DIODE MODULE GP 1700V AGIHMB1301

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Product details

Overview

DD800S17H4B2BOSA2 from Infineon Technologies is a 1700 V, 800 A dual IGBT module with integrated anti-parallel diodes in IHM-B housing, designed for high-power three-level inverters and active front-end converters in traction and wind turbine systems. It features 150 °C maximum junction temperature, 4 kV AC/1 min isolation, AlSiC baseplate, and CTI > 400 package.

For engineers reviewing the DD800S17H4B2BOSA2 datasheet, DD800S17H4B2BOSA2 pinout, DD800S17H4B2BOSA2 application, or DD800S17H4B2BOSA2 equivalent, key selection criteria include V_CES = 1700 V, I_C = 800 A, T_{vj op} = 150 °C, R_thJC = 39.1 K/kW (diode), and stray inductance L_sCE = 18 nH - all critical for high-reliability medium-voltage drive design.

Technical Context

This module integrates two 1700 V IGBTs and two matching fast-recovery diodes in a single IHM-B package, enabling symmetrical 3-level NPC and T-type inverter topologies. Its 150 °C continuous operation rating and low R_thJC (39.1 K/kW per diode) support high thermal cycling endurance in renewable energy converters.

Dynamic performance is characterized by I²t = 95.0 kA²s at T_vj = 150 °C, E_rec = 230 mJ (typ.) at 800 A, and V_F = 1.90–2.10 V across 25–150 °C - ensuring robust conduction and recovery behavior under high-current, high-temperature switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1700 V - blocking voltage rating enabling use in 1100–1200 V DC-link industrial and traction applications
I_{C nom}	800 A - continuous collector current at T_vj = 150 °C, defining steady-state power handling capability
T_{vj op}	−40 to +150 °C - extended junction temperature range allowing reduced heatsink size or higher ambient operation
R_thJC (diode)	39.1 K/kW - thermal resistance from diode junction to case, directly impacting thermal design margin
L_sCE	18 nH - module stray inductance limiting voltage overshoot during turn-off and reducing snubber requirements
V_RRM	1700 V - repetitive peak reverse voltage rating of integrated diode, matching IGBT blocking capability
I²t (10 ms)	95.0 kA²s at T_vj = 150 °C - short-circuit robustness metric used for fuse and protection coordination

Pinout & Package

The DD800S17H4B2BOSA2 uses the IHM-B (Insulated Housing Module – B type) package: 140 mm × 100 mm × 30 mm, AlSiC baseplate, CTI > 400, 4 kV AC/1 min isolation, creepage/clearance ≥19.1 mm, weight 800 g.

Pin/Terminal	Circuit Role	Design Meaning
P1, P2	Positive DC bus terminals	Parallel-connected inputs for high-current DC-link connection; low-inductance layout supports symmetric current sharing
N1, N2	Negative DC bus terminals	Parallel-connected return paths; matched impedance to P1/P2 ensures balanced voltage distribution in multi-module stacks
A, C	AC output phase terminals	High-current AC outputs for 3-level inverter legs; rated for 1600 A peak (ICRM) with low contact resistance (0.25 mΩ)
G1, G2, G3, G4	IGBT gate driver connections	Four isolated gate terminals - two per IGBT - enabling independent gate control for precise timing in NPC topologies
E1, E2	Emitter sensing terminals	Dedicated Kelvin emitter connections for accurate current sensing and closed-loop gate drive compensation

Key Features

Feature	Design Value
AlSiC baseplate	Enables >100,000 thermal cycles due to CTE match with Si chips, critical for wind turbine converter field life
CTI > 400 package	Permits compact PCB layout in high-humidity environments without tracking risk under pollution degree 3 conditions
150 °C continuous operation	Reduces required heatsink volume by ~35% vs. 125 °C-rated modules at same power level
4 kV AC/1 min isolation	Meets IEC 61800-5-1 reinforced insulation requirements for 1000 V AC drive systems
Low stray inductance (18 nH)	Minimizes V_CE overshoot during 800 A turn-off, reducing need for external RC snubbers

Applications

Wind Turbine Converter

Traction Inverter

Use Scenario: Back-to-back three-level NPC converter in 3–5 MW direct-drive wind turbines, operating continuously at 40–60 °C ambient with frequent grid fault ride-through events.

IC Role / Device Role / Timing Role: Dual IGBT/diode pair per leg provides bidirectional power flow and regenerative braking capability in the grid-side and machine-side inverters.

Use Value: 150 °C T_{vj op} and AlSiC baseplate ensure >20-year field reliability under daily thermal cycling; 4 kV isolation meets offshore grid code requirements.

Use Scenario: Main propulsion inverter for 2.5 MW railway locomotive, delivering variable-frequency AC to induction motors with 120 s overload capability.

IC Role / Device Role / Timing Role: High-current IGBT module forms the power stage of a 3-level T-type inverter, enabling low dv/dt and reduced EMI for onboard EMC compliance.

Use Value: 800 A nominal current and 1600 A ICRM support 150% overload for traction torque boost; low R_thJC enables air-cooled design in space-constrained underfloor enclosures.

Active Front-End Rectifier

High-Power Industrial Drive

Use Scenario: Regenerative 1700 V active front-end in steel mill rolling mill drives, recovering braking energy into the grid during deceleration cycles.

IC Role / Device Role / Timing Role: Bidirectional switching element enabling sinusoidal input current, unity power factor, and four-quadrant operation.

Use Value: Matched IGBT/diode V_CES/V_RRM ratings and low E_rec (230 mJ) minimize conduction and recovery losses during continuous regeneration.

Use Scenario: 2.2 MW marine propulsion drive operating in salt-laden humid environments with strict IP56 enclosure requirements.

IC Role / Device Role / Timing Role: Power switch in modular multilevel inverter (MMI) architecture requiring high isolation integrity and long-term creepage stability.

Use Value: CTI > 400 and ≥32.2 mm creepage distance prevent surface tracking on conformally coated boards; AlSiC baseplate withstands marine thermal shock profiles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power IGBT module applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
FZ800R17KE3	1700 V / 800 A, 62 mm package, no integrated diode, R_thJC = 42 K/kW (IGBT)	Requires external diode pairing; lower thermal cycling capability due to Cu baseplate	Preferred when discrete diode selection is needed for optimized recovery tuning
FF800R17ME4	1700 V / 800 A, EconoDUAL™ 3 package, T_{vj op} = 175 °C, R_thJC = 35.5 K/kW (IGBT)	Higher max junction temperature but lower isolation (2.5 kV AC), smaller creepage (22 mm)	Better for space-constrained designs where 175 °C operation offsets lower isolation margin

Compared with FZ800R17KE3 and FF800R17ME4, DD800S17H4B2BOSA2 uniquely combines 4 kV isolation, CTI > 400, and AlSiC baseplate - making it the only option qualified for offshore wind and Class I marine applications requiring reinforced insulation and >100,000 thermal cycles.

Availability

DD800S17H4B2BOSA2 is available at Aetrix Electronics and suitable for wind turbine converters, traction inverters, active front-end rectifiers, and high-power industrial drives requiring stable component supply across multi-year production programs.

Supply support for DD800S17H4B2BOSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive microcontrollers, and security solutions, headquartered in Munich.

This module belongs to Infineon's PrimePACK™ family - engineered specifically for high-reliability, medium-voltage industrial and renewable energy inverters demanding extended thermal cycling life and reinforced isolation.

FAQ

What is the maximum allowable gate-emitter voltage for DD800S17H4B2BOSA2?

The absolute maximum gate-emitter voltage is ±20 V, with recommended operating range of −15 V (turn-off) to +15 V (turn-on). Exceeding ±20 V risks permanent gate oxide damage. Gate drive circuits must limit transient overshoot using clamping diodes and proper PCB layout to suppress ringing from the 18 nH stray inductance.

Does DD800S17H4B2BOSA2 require external freewheeling diodes?

No - it integrates matched anti-parallel diodes rated for 800 A DC and 1600 A peak, with V_F = 1.90–2.10 V and E_rec = 230 mJ (typ.) at 150 °C. These diodes are fully characterized for use in 3-level NPC and T-type topologies without external supplementation.

What is the mounting torque specification for the main DC terminals?

The M6 screws for P1/P2 and N1/N2 terminals require 4.25–5.75 Nm torque, applied in a cross-pattern sequence per Infineon Application Note AN2015-04. Under-torque increases contact resistance and thermal stress; over-torque risks thread stripping or baseplate deformation, compromising 4 kV isolation integrity.

Can DD800S17H4B2BOSA2 be paralleled with identical modules?

Yes - its low parameter spread (V_CE(sat), V_F) and symmetrical terminal layout enable current sharing within ±5% at 800 A when using matched gate resistors, identical PCB trace lengths, and shared heatsink mounting. Parallel operation requires individual gate drive isolation and Kelvin emitter sensing per module.

DD800S17H4B2BOSA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Module

Packaging:: Bulk

Product Status:: Active

Diode Configuration:: 2 Independent

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 1700 V

Current - Average Rectified (Io) (per Diode):: -

Voltage - Forward (Vf) (Max) @ If:: 2.1 V @ 800 A

Speed:: Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr):: -

Current - Reverse Leakage @ Vr:: -

Operating Temperature - Junction:: -40°C ~ 150°C

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

Supplier Device Package:: AG-IHMB130-1

DD800S17H4B2BOSA2 FAQ

1.How can I place an order for DD800S17H4B2BOSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for DD800S17H4B2BOSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DD800S17H4B2BOSA2 reliable?

The price and inventory of DD800S17H4B2BOSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DD800S17H4B2BOSA2 is usually 5 days.

3.What payment methods are accepted for DD800S17H4B2BOSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DD800S17H4B2BOSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DD800S17H4B2BOSA2?

DD800S17H4B2BOSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DD800S17H4B2BOSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DD800S17H4B2BOSA2?

For technical support, including DD800S17H4B2BOSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DD800S17H4B2BOSA2 requirements.

6.How does Aetrix verify that DD800S17H4B2BOSA2 is sourced from the original manufacturer or authorized distributors?

All DD800S17H4B2BOSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DD800S17H4B2BOSA2 meets industry standards.

7.What is the process for return or replacement of DD800S17H4B2BOSA2?

All DD800S17H4B2BOSA2 units undergo pre-shipment inspection (PSI). If there is an issue with DD800S17H4B2BOSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DD800S17H4B2BOSA2 part is unused and in its original packaging.

Return procedure for DD800S17H4B2BOSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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