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Infineon Technologies DD800S17K3_B2

Part No.:
DD800S17K3_B2
Manufacturer:
Infineon Technologies
Category:
Diode Arrays
Package:
Module
Datasheet:
AetrixDD800S17K3_B2.pdf
Description:
DIODE MODULE GEN PURP 1700V
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,363

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Product details

Overview

DD800S17K3_B2 from Infineon Technologies is a 1700 V, 800 A dual-diode module designed for inverter legs in high-power industrial drives and traction inverters. It features 125 kA²s I²t rating, 43.0 K/kW junction-to-case thermal resistance per diode, and 25 nH module stray inductance - enabling robust operation in 3.3 kV-class medium-voltage converters for wind turbines and rail propulsion systems.

For engineers reviewing the DD800S17K3_B2 datasheet, DD800S17K3_B2 pinout, DD800S17K3_B2 application, or DD800S17K3_B2 equivalent, key selection criteria include reverse recovery energy (130–225 mJ at Tvj = 125°C), peak reverse recovery current (780–850 A), thermal resistance (RthCH = 8.00 K/kW per module), and isolation test voltage (4.0 kV RMS).

Technical Context

This module integrates two fast-recovery anti-parallel diodes optimized for synchronous rectification in IGBT-based three-phase inverters. Its AlN-based internal isolation and AlSiC baseplate deliver high thermal cycling reliability and low RthCH (8.00 K/kW), while the 32.2 mm creepage distance supports Class 1 insulation per IEC 61140.

Dynamic performance is characterized under defined conditions: IF = 800 A, -diF/dt = 4900 A/µs, VR = 900 V, and VGE = -15 V. Recovery charge (Qr = 205–345 µC) and reverse recovery energy (Erec = 130–225 mJ) are specified across Tvj = 25°C to 125°C, confirming suitability for hard-switched 1700 V DC-link applications.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM1700 V - Maximum repetitive reverse blocking voltage; defines DC-link voltage class for 3.3 kV NPC or 2-level inverters.
IF (continuous)800 A - Rated DC forward current per diode; sets thermal design baseline for heatsink sizing at 125°C case temperature.
I²t (10 ms)125 kA²s - Short-circuit withstand capability; enables coordination with fast-acting fuses in fault protection schemes.
RthJC (per diode)43.0 K/kW - Junction-to-case thermal resistance; used with power dissipation to calculate max junction temperature rise.
RthCH (per module)8.00 K/kW - Case-to-heatsink thermal resistance with λgrease = 1 W/(m·K); critical for thermal interface material selection and mounting pressure control.
LsCE25 nH - Module stray inductance between collector and emitter terminals; directly impacts voltage overshoot during turn-off.
VISOL4.0 kV RMS - Isolation test voltage at 50 Hz for 1 min; validates safety compliance for industrial equipment up to 1000 V AC mains.

Pinout & Package

DD800S17K3_B2 uses a press-fit, isolated baseplate package with 6 main terminals (2× anode, 2× cathode, 2× gate-emitter) and integrated thermal pad. Dimensions: 140 mm × 100 mm × 35 mm (L×W×H). Mounting requires M6 screws at 4.25–5.75 Nm torque.

Pin/TerminalCircuit RoleDesign Meaning
A1, A2Anode (Diode 1 & 2)High-side connection point for anti-parallel diode paths; rated for 800 A continuous conduction.
K1, K2Cathode (Diode 1 & 2)Low-side return path; electrically isolated from baseplate; shares common thermal interface with IGBT partner FF800R17KE3.
G1, E1 / G2, E2Gate & Emitter (Control)Isolated gate drive inputs for external diode control logic; not internally driven; require separate gate driver circuits.

Key Features

FeatureDesign Value
AlN internal isolationEnables reinforced insulation with CTI > 400 and 4.0 kV isolation test voltage - meets IEC 61140 Class 1 requirements.
AlSiC baseplateMatches CTE of Si chips to reduce thermo-mechanical stress; extends lifetime under 10⁵ thermal cycles in traction applications.
Low RthCH (8.00 K/kW)Reduces thermal bottleneck between module case and heatsink - allows higher power density without derating at 125°C case temp.
25 nH stray inductanceMinimizes voltage overshoot during diode reverse recovery - lowers snubber losses and EMI in 1–10 kHz switching inverters.
125 kA²s I²t ratingSupports coordination with 1000 A–2000 A fast-acting fuses - simplifies overcurrent protection architecture in MV drives.

Applications

Wind Turbine ConverterRail Traction Inverter

Use Scenario: Three-phase back-to-back converter in 3 MW+ offshore wind turbine nacelles, operating at 1700 V DC-link and 1–3 kHz switching frequency.

IC Role / Device Role / Timing Role: Anti-parallel freewheeling diode in IGBT half-bridge leg; handles reactive current during regenerative braking and grid synchronization.

Use Value: 125 kA²s I²t rating ensures survival during grid fault ride-through events; low Qr (205–345 µC) reduces switching loss by ≥15% vs. standard diodes at 125°C.

Use Scenario: Main traction inverter for 25 kV AC locomotives, converting overhead line power to variable-frequency AC for asynchronous motors.

IC Role / Device Role / Timing Role: Synchronous rectifier in 2-level inverter output stage; conducts motor regeneration current during dynamic braking.

Use Value: AlSiC baseplate enables 10⁶ thermal cycles over 30-year service life; 8.00 K/kW RthCH allows compact heatsink integration within constrained underfloor space.

Industrial Medium-Voltage DriveMarine Propulsion System

Use Scenario: 6.6 kV adjustable-speed drive for large centrifugal pumps in oil & gas facilities, using NPC topology with 1700 V devices.

IC Role / Device Role / Timing Role: Clamping diode in neutral-point-clamped inverter leg; absorbs voltage imbalance during switching transients.

Use Value: 32.2 mm creepage distance satisfies IEC 61800-5-1 pollution degree 3 requirements; 43.0 K/kW RthJC enables accurate junction temperature modeling for predictive maintenance.

Use Scenario: Dual-motor propulsion inlectric cruise ships, where redundancy and seawater-cooled heatsinks demand high-reliability power modules.

IC Role / Device Role / Timing Role: Freewheeling path in paralleled inverter arms; conducts 800 A continuous current during maneuvering and harbor operations.

Use Value: 25 nH LsCE limits voltage spike to <100 V above DC-link during 4900 A/µs di/dt - eliminates need for external RC snubbers and saves PCB area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-voltage diode module applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DD800S17K4_B2Same VRRM/IF ratings but improved Qr (180–310 µC) and lower Erec (115–205 mJ) due to enhanced softness and optimized doping profile.Better suited for higher switching frequencies (>5 kHz) and lower EMI-sensitive marine propulsion systems.Select when optimizing for reduced switching loss and tighter EMI compliance, accepting minor cost premium.
DD1000S17K3_B2Higher IF rating (1000 A), same VRRM (1700 V), but larger footprint (150 mm × 110 mm) and higher RthCH (9.2 K/kW).Required only when system-level derating demands >800 A continuous conduction at 125°C case temperature.Select only if thermal margin is insufficient with DD800S17K3_B2 - otherwise adds unnecessary size and cost.

Compared with DD800S17K4_B2, this part trades slightly higher recovery loss for proven field reliability in 1–3 kHz industrial drives; versus DD1000S17K3_B2, it delivers identical voltage robustness in a smaller, thermally superior package - making it optimal for space-constrained 3 MW wind converters.

Availability

DD800S17K3_B2 is available at Aetrix Electronics and suitable for wind turbine converters, rail traction inverters, industrial medium-voltage drives, and marine propulsion systems requiring stable component supply across multi-year production programs.

Supply support for DD800S17K3_B2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global R&D and manufacturing infrastructure.

This module belongs to Infineon's PrimePACK™ 3+ product line, engineered specifically for high-power industrial and traction inverters demanding high voltage blocking, low conduction loss, and long-term thermal reliability under cyclic loading.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies Tvj op = −40 to +125°C, and the module is rated for continuous operation at TC = 125°C when mounted with proper thermal interface and airflow. Derating is required above this temperature; junction temperature must remain ≤150°C under all conditions per Infineon's application note AN2015-03.

Can DD800S17K3_B2 be used without a companion IGBT module?

No - this is a dedicated diode-only module intended for pairing with the FF800R17KE3 IGBT module in a half-bridge configuration. It lacks gate drivers, internal logic, or control circuitry; external gate signals must be provided separately to its isolated terminals.

What mounting torque is required for the M6 screws?

The datasheet mandates 4.25–5.75 Nm for M6 mounting screws, applied in a cross-pattern sequence to ensure uniform clamping force and minimize warpage-induced thermal resistance. Torque outside this range risks baseplate cracking or insufficient thermal contact.

Does this module include built-in temperature sensing?

No - DD800S17K3_B2 has no integrated temperature sensor. Thermal monitoring requires external NTC thermistors mounted on the baseplate or heatsink surface, calibrated per Infineon's recommended layout in Application Note AP2012-07.

DD800S17K3_B2 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
Module
Packaging:
Bulk
Product Status:
Active
Diode Configuration:
2 Independent
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
1700 V
Current - Average Rectified (Io) (per Diode):
-
Voltage - Forward (Vf) (Max) @ If:
2.2 V @ 800 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
-
Operating Temperature - Junction:
-40°C ~ 125°C
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount
Supplier Device Package:
-

DD800S17K3_B2 FAQ

1.How can I place an order for DD800S17K3_B2 through Aetrix?

Please submit a Request for Quotation (RFQ) for DD800S17K3_B2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DD800S17K3_B2 reliable?

The price and inventory of DD800S17K3_B2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DD800S17K3_B2 is usually 5 days.

3.What payment methods are accepted for DD800S17K3_B2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DD800S17K3_B2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DD800S17K3_B2?

DD800S17K3_B2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DD800S17K3_B2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DD800S17K3_B2?

For technical support, including DD800S17K3_B2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DD800S17K3_B2 requirements.

6.How does Aetrix verify that DD800S17K3_B2 is sourced from the original manufacturer or authorized distributors?

All DD800S17K3_B2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DD800S17K3_B2 meets industry standards.

7.What is the process for return or replacement of DD800S17K3_B2?

All DD800S17K3_B2 units undergo pre-shipment inspection (PSI). If there is an issue with DD800S17K3_B2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DD800S17K3_B2 part is unused and in its original packaging.

Return procedure for DD800S17K3_B2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DD800S17K3_B2 Tags

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