Infineon Technologies DD800S33K2CB3S2NDSA1

Overview

DD800S33K2CB3S2NDSA1 from Infineon Technologies is a 3.3 kV, 800 A dual-diode module for high-power inverter applications in traction and industrial drives. It features 3300 V repetitive peak reverse voltage, 1600 A repetitive peak forward current, 220 kA²s I²t rating, and 26.0 K/kW junction-to-case thermal resistance per diode. It operates at up to 125°C junction temperature and is rated for 6.0 kV isolation test voltage.

For engineers reviewing the DD800S33K2CB3S2NDSA1 datasheet, DD800S33K2CB3S2NDSA1 pinout, DD800S33K2CB3S2NDSA1 application, or DD800S33K2CB3S2NDSA1 equivalent, key selection criteria include reverse recovery energy (490–1150 mJ), forward voltage (2.80–3.50 V @ 800 A), stray inductance (25 nH), and SOA compliance at 125°C under 3.3 kV blocking.

Technical Context

This module integrates two fast-recovery, high-voltage silicon diodes in a press-fit, AlSiC-baseplate package with AlN internal insulation. It is designed for series-connected operation in 3.3 kV NPC and multi-level inverters, where low Q_r (500–900 µC) and controlled E_rec enable efficient hard-switching at medium frequencies.

The module's 25 nH stray inductance and 0.34 mΩ terminal-to-chip resistance minimize switching oscillation and conduction loss. Its transient thermal impedance profile (Z_thJC) supports pulsed overload handling up to 1600 A with defined thermal time constants (τ = 0.03–1 s).

Key Specifications

Pinout & Package

DD800S33K2CB3S2NDSA1 uses an industry-standard 62 mm press-fit module package with AlSiC baseplate and AlN ceramic isolation. Electrical terminals are arranged in a symmetrical dual-diode configuration with isolated collector/emitter paths and common heatsink mounting interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage diode module applications.

Compared with FF800R33KF2C and DD1000S33K2C, DD800S33K2CB3S2NDSA1 delivers optimal balance of dual-diode integration, 25 nH stray inductance, and proven field reliability in rail traction-making it preferred for space-constrained 3.3 kV inverter modules requiring minimal external layout.

Availability

DD800S33K2CB3S2NDSA1 is available at Aetrix Electronics and suitable for rail traction inverters, medium-voltage industrial drives, renewable energy HVDC converters, and marine propulsion systems requiring stable component supply across extended production lifecycles.

Supply support for DD800S33K2CB3S2NDSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and energy markets.

This part belongs to Infineon's PrimePACK™ 2 family of high-power IGBT and diode modules, engineered for 3.3 kV industrial and traction applications demanding high reliability, low switching losses, and reinforced insulation.

FAQ

What is the maximum recommended heatsink temperature for continuous 800 A operation?

The module's R_thCH is 6.00 K/kW at λ_grease = 1 W/(m·K). At 800 A and typical V_F = 3.15 V, conduction loss is ~2.52 kW per diode. With 26.0 K/kW R_thJC, max heatsink temperature must not exceed 65°C to maintain T_vj ≤ 125°C. Derating is required above this limit.

Does DD800S33K2CB3S2NDSA1 support press-fit assembly without solder reflow?

Yes. The module is qualified for press-fit mounting using M6 screws at 4.25–5.75 Nm torque per the Infineon Application Note AN2015-04. No soldering is required; thermal and mechanical integrity is maintained via AlSiC baseplate compression against copper heatsinks.

How does the 25 nH stray inductance affect gate driving requirements?

A 25 nH L_sCE contributes ~45 V overshoot at di/dt = 4500 A/µs. This requires gate drivers capable of sustaining ≥25 V negative clamp during turn-off and mandates low-inductance gate loop layout (<10 nH) to avoid false triggering or oscillation in parallel configurations.

Is partial discharge testing performed on every production unit?

No. Partial discharge extinction voltage (2.6 kV RMS) is verified per lot sampling per IEC 61287. Full 100% isolation testing applies only to the 6.0 kV RMS dielectric withstand test, which is performed on every unit during final QA screening.