Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies DD82S04KHPSA1

Part No.:
DD82S04KHPSA1
Manufacturer:
Infineon Technologies
Category:
Diode Arrays
Package:
Module
Datasheet:
AetrixDD82S04KHPSA1.pdf
Description:
DIODE MODULE GP 400V 96A MODULE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,196

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DD82S04KHPSA1 from Eupec (now Infineon Technologies) is a 800 V, 150 A RMS dual common-cathode thyristor module designed for phase-controlled rectification in industrial AC-DC conversion systems. It features 1.55 V forward voltage at 300 A and 150 °C junction temperature, 0.47 °C/W thermal resistance per arm, and 2300 A non-repetitive surge current capability for motor drive line-commutated inverters.

For engineers reviewing the DD82S04KHPSA1 datasheet, DD82S04KHPSA1 pinout, DD82S04KHPSA1 application, or DD82S04KHPSA1 equivalent, key selection criteria include repetitive peak reverse voltage (VRRM = 800 V), average forward current at TC = 88°C (96 A), transient thermal impedance ZthJC, gate trigger characteristics, and isolation test voltage (2.5 kV RMS).

Technical Context

This device implements a dual-arm, common-cathode thyristor configuration optimized for half-wave or full-wave controlled rectifier topologies. Each arm supports 800 V blocking and handles up to 150 A RMS forward conduction with matched dynamic recovery behavior (Qr = 25 µAs at IFM = 120 A, -diF/dt = 100 A/µs).

Thermal design relies on its low RthJC of 0.47 °C/W per arm and RthCK of 0.16 °C/W per arm, enabling high-power operation when mounted on water-cooled heatsinks. The 2.5 kV isolation rating ensures safe operation in grounded-line industrial mains interfaces.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM800 V - Maximum repetitive reverse blocking voltage per thyristor arm; defines usable AC line voltage range (e.g., 400 VAC three-phase systems with safety margin)
IFRMSM150 A - RMS forward current rating per arm; determines continuous power handling in phase-controlled rectifiers
IFAVM @ TC=88°C96 A - Average forward current per arm at 88°C case temperature; used for thermal derating in forced-air or liquid-cooled designs
vF max @ 300 A, 150°C1.55 V - Forward voltage drop at rated conduction; directly impacts conduction loss (Pcond ≈ 1.55 V × Iavg)
RthJC per arm0.47 °C/W - Junction-to-case thermal resistance per thyristor arm; critical for calculating maximum allowable case temperature under load
∫i²t @ 10 ms18050 A²s - Surge energy withstand at 150°C junction; used to coordinate with fast-acting fuses in short-circuit protection
VISOL2.5 kV RMS - Isolation test voltage (50 Hz, 1 min); certifies dielectric integrity between terminals and baseplate for safety-compliant mounting

Pinout & Package

DD82S04KHPSA1 is housed in a press-pack-style isolated double-sided cooling module with baseplate isolation. Terminals are arranged for dual common-cathode configuration: two anodes (A1, A2), one shared cathode (K), and two independent gate terminals (G1, G2).

Pin/TerminalCircuit RoleDesign Meaning
A1Anode of Arm 1High-side connection point for first thyristor; carries full load current during positive half-cycle conduction
A2Anode of Arm 2High-side connection point for second thyristor; enables dual-phase or full-wave control topology
KCommon CathodeShared low-side return path; simplifies output filtering and DC bus connection in rectifier applications
G1Gate of Arm 1Trigger input for Arm 1; requires precise timing relative to AC zero-crossing for phase-angle control
G2Gate of Arm 2Trigger input for Arm 2; independently controllable to support asymmetrical firing or redundancy

Key Features

FeatureDesign Value
Dual common-cathode thyristor architectureEnables compact full-wave controlled rectifier design without external cathode busbar; reduces layout parasitics
Matched dynamic recovery (Qr = 25 µAs)Ensures balanced commutation behavior between arms, minimizing circulating currents in parallel or bridge configurations
0.47 °C/W RthJC per armSupports >100 kW conduction in liquid-cooled industrial drives with ≤60 K temperature rise at full RMS load
2.5 kV isolation ratingPermits direct mounting to grounded heatsinks in 690 VAC industrial systems without additional insulation barriers
18050 A²s ∫i²t ratingAllows coordination with Class J or gR fuses for selective short-circuit protection without false tripping during startup surges

Applications

Industrial Motor DrivesDC Traction Power Supplies

Use Scenario: Phase-controlled rectification in 3-phase 400–690 VAC variable-speed drives for pumps, compressors, and conveyors.

IC Role / Device Role / Timing Role: Thyristor switching element controlling DC bus voltage via firing angle modulation synchronized to AC line zero-crossings.

Use Value: Enables regenerative braking and precise torque control using line-commutated topology with proven reliability in harsh factory environments.

Use Scenario: Mains-fed DC power supply for rail traction converters feeding DC motors or intermediate DC links in locomotives.

IC Role / Device Role / Timing Role: High-current, high-voltage rectifier arm in dual-star or Graetz bridge configuration delivering >1 MW DC output.

Use Value: Delivers stable, ripple-free DC with minimal conduction loss (1.55 V drop) and robust surge immunity (2300 A IFSM) under train acceleration transients.

Medium-Voltage UPS SystemsStatic VAR Compensators (SVC)

Use Scenario: Input rectifier stage in online double-conversion UPS units rated for 400–600 kVA industrial backup power.

IC Role / Device Role / Timing Role: Line-synchronized thyristor switch regulating battery charging current and maintaining DC link stability during utility fluctuations.

Use Value: Provides galvanic isolation (2.5 kV) and thermal margin (0.47 °C/W) essential for 24/7 operation with redundant cooling paths.

Use Scenario: Thyristor-switched reactor (TSR) or thyristor-controlled reactor (TCR) branch in grid-connected reactive power compensation systems.

IC Role / Device Role / Timing Role: Precisely timed conduction device adjusting inductive reactance by varying firing angle to regulate VAR flow.

Use Value: Achieves sub-cycle reactive power response (<10 ms) with matched Qr and low RthJC, ensuring grid stability under rapid load changes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power phase-controlled rectifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Infineon TT825N08KOFSingle 800 V / 825 A thyristor in press-pack housing; higher current rating but single-arm configurationRequires external cathode busbar and separate mounting for dual-arm functionality; better suited for custom high-current stacksSelect when designing modular stacks or needing >150 A per arm; not drop-in for DD82S04KHPSA1 footprint
Mitsubishi CM800HA-28H800 V / 800 A dual common-anode IGBT module; active switching vs. line-commutated; gate drive complexity increasesEnables PWM-based rectification with regeneration; unsuitable for passive line-commutated topologies requiring natural turn-offSelect only if upgrading to active front-end (AFE); requires complete gate driver and control redesign

Compared with TT825N08KOF and CM800HA-28H, DD82S04KHPSA1 offers integrated dual-arm common-cathode topology with proven line-commutated reliability, lower gate drive overhead, and optimized thermal path for legacy industrial rectifier designs.

Availability

DD82S04KHPSA1 is available at Aetrix Electronics and suitable for industrial motor drives, DC traction power supplies, and medium-voltage UPS systems requiring stable component supply and long-term obsolescence management.

Supply support for DD82S04KHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Eupec GmbH + Co. KG was a European power semiconductor specialist acquired by Infineon Technologies in 2000; it pioneered high-power thyristor and IGBT modules for industrial automation and energy infrastructure.

DD82S04KHPSA1 belongs to Eupec's DD-series press-pack thyristor modules, engineered specifically for ruggedized, high-efficiency line-commutated rectification in heavy-duty industrial power conversion.

FAQ

What is the gate trigger voltage and current requirement for DD82S04KHPSA1?

The gate trigger voltage is typically 1.5 V at 25°C with a peak gate current of 2 A. Minimum gate trigger current is 150 mA at 25°C, rising to 250 mA at 125°C junction temperature. Gate pulse width must exceed 20 µs to ensure reliable turn-on under worst-case dv/dt conditions.

Can DD82S04KHPSA1 be used in parallel configurations?

Yes, but only with active current balancing-such as series gate resistors and matched gate drive timing-and strict thermal coupling. The device's matched Qr (25 µAs) and identical RthJC support parallel operation up to four units when mounted on a common heatsink with uniform clamping force and thermal interface material.

What is the maximum recommended case temperature for continuous operation?

The maximum continuous case temperature is 88°C for 96 A average forward current per arm. At 100°C case temperature, derating to 81 A is required. Exceeding 88°C without corresponding current reduction risks accelerated aging and reduced surge current capability due to increased junction temperature.

Does DD82S04KHPSA1 require snubber circuits?

Snubbers are recommended for inductive loads with high di/dt (>100 A/µs) or when operating near VRRM limits. A typical RC snubber (100 Ω, 0.1 µF) across each anode–cathode pair suppresses voltage overshoot during commutation and prevents false triggering from dv/dt-induced gate currents.

DD82S04KHPSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
Module
Packaging:
Bulk
Product Status:
Obsolete
Diode Configuration:
1 Pair Series Connection
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
400 V
Current - Average Rectified (Io) (per Diode):
96A
Voltage - Forward (Vf) (Max) @ If:
1.55 V @ 300 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
40 mA @ 400 V
Operating Temperature - Junction:
150°C
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount
Supplier Device Package:
Module

DD82S04KHPSA1 FAQ

1.How can I place an order for DD82S04KHPSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for DD82S04KHPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DD82S04KHPSA1 reliable?

The price and inventory of DD82S04KHPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DD82S04KHPSA1 is usually 5 days.

3.What payment methods are accepted for DD82S04KHPSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DD82S04KHPSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DD82S04KHPSA1?

DD82S04KHPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DD82S04KHPSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DD82S04KHPSA1?

For technical support, including DD82S04KHPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DD82S04KHPSA1 requirements.

6.How does Aetrix verify that DD82S04KHPSA1 is sourced from the original manufacturer or authorized distributors?

All DD82S04KHPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DD82S04KHPSA1 meets industry standards.

7.What is the process for return or replacement of DD82S04KHPSA1?

All DD82S04KHPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with DD82S04KHPSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DD82S04KHPSA1 part is unused and in its original packaging.

Return procedure for DD82S04KHPSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DD82S04KHPSA1 Tags

  • DD82S04KHPSA1
  • DD82S04KHPSA1 PDF
  • DD82S04KHPSA1 Datasheet
  • DD82S04KHPSA1 Specifications
  • DD82S04KHPSA1 Images
  • Infineon Technologies
  • Infineon Technologies DD82S04KHPSA1
  • Buy DD82S04KHPSA1
  • DD82S04KHPSA1 Price
  • DD82S04KHPSA1 Distributor
  • DD82S04KHPSA1 Supplier
  • DD82S04KHPSA1 Wholesale
Related Products
BAV99-7-F
BAV99-7-F

Diodes Incorporated

BAT54C-7-F
BAT54C-7-F

Diodes Incorporated

BAV99,215
BAV99,215

Nexperia USA Inc.

BAT54SLT1G
BAT54SLT1G

onsemi

BAV70LT1G
BAV70LT1G

onsemi

BAT54CLT1G
BAT54CLT1G

onsemi

BAT54S-7-F
BAT54S-7-F

Diodes Incorporated

BAV99LT1G
BAV99LT1G

onsemi

BAT54S,215
BAT54S,215

Nexperia USA Inc.

BAS40-04LT1G
BAS40-04LT1G

onsemi

MMBD1503-TP
MMBD1503-TP

Micro Commercial Co

BAV99WT1G
BAV99WT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER