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Infineon Technologies DDB2U20N12W1RFB11BPSA1
- Part No.:
- DDB2U20N12W1RFB11BPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Bridge Rectifiers
- Package:
- Module
- Datasheet:
-
DDB2U20N12W1RFB11BPSA1.pdf
- Description:
- BRIDGE RECT 1P 1.2KV 20A EASY1B1
- Quantity:
- Payment:
- Shipping:
Inventory:8
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Product details
Overview
DDB2U20N12W1RFB11BPSA1 from Infineon Technologies is an EasyBRIDGE power module integrating a 1200 V / 20 A CoolSiC™ Gen 5 Schottky diode and an embedded NTC thermistor, housed in a PressFIT-mountable Al₂O₃-substrate package. It delivers high dynamic robustness with 150 °C maximum junction temperature and supports DC fast charging systems requiring low thermal resistance (1.56 K/W per diode) and surge capability up to 130 A at 150 °C.
For engineers reviewing the DDB2U20N12W1RFB11BPSA1 datasheet, DDB2U20N12W1RFB11BPSA1 pinout, DDB2U20N12W1RFB11BPSA1 application, or DDB2U20N12W1RFB11BPSA1 equivalent, this module is selected for high-reliability EV DC charger rectification stages where press-fit mounting, integrated temperature sensing, and SiC-based low-loss conduction are critical design requirements.
Technical Context
This module implements a dual-diode configuration optimized for single-phase or three-phase bridge rectification in high-voltage DC charging systems. Its CoolSiC™ Gen 5 Schottky diode enables zero reverse recovery charge (Qrr ≈ 0), eliminating switching losses and reducing EMI during commutation.
The integrated NTC thermistor (R₂₅ = 5 kΩ, B₂₅/₁₀₀ = 3433 K) provides real-time die temperature monitoring directly at the heatsink interface, while the Al₂O₃ substrate ensures 1.56 K/W thermal resistance from junction to heatsink and meets IEC 61140 basic insulation requirements with 3.0 kV RMS isolation voltage.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - Maximum repetitive reverse blocking voltage; enables operation in 1000 V DC bus systems with safety margin. |
| IFRMSM | 20 A @ TH = 70 °C - Continuous RMS forward current rating per chip; defines thermal derating envelope for sustained rectifier output. |
| VF @ 20 A, 150 °C | 1.85 V - Forward voltage drop under worst-case operating temperature; determines conduction loss (Pcond ≈ 37 W per diode). |
| RthJH | 1.56 K/W - Junction-to-heatsink thermal resistance per diode; enables accurate thermal modeling for heatsink sizing. |
| R25 (NTC) | 5 kΩ - Rated resistance at 25 °C; used with standard NTC lookup tables or Steinhart-Hart calibration for precise temperature feedback. |
| Visol | 3.0 kV RMS - Isolation test voltage (50 Hz, 1 min); certifies compliance with functional insulation requirements for industrial EV infrastructure. |
| LsCE | 10 nH - Stray inductance of module internal connections; minimizes voltage overshoot during di/dt transients in high-frequency rectifier switching. |
Pinout & Package
Package: EasyBRIDGE module with PressFIT terminals, Al₂O₃ ceramic substrate, integrated mounting clamps, and embedded NTC sensor. Dimensions and terminal layout conform to Infineon's standardized EasyBRIDGE outline (see Figure 3, Datasheet Rev. 1.10).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1, A2 | Anode terminals (dual parallel diodes) | High-current input nodes for AC phase inputs; rated for 25 A RMS per pin; designed for PressFIT insertion into PCB without soldering. |
| K1, K2 | Cathode terminals (dual parallel diodes) | DC output nodes; electrically common internally; support bidirectional current flow in bridge configurations. |
| NTC+ | NTC thermistor positive lead | Provides access to one end of integrated 5 kΩ NTC; requires external bias resistor for voltage divider readout. |
| NTC− | NTC thermistor negative lead | Reference node for NTC measurement; tied internally to cathode potential in standard implementation. |
| Heatsink pad | Thermal & electrical reference plane | Electrically isolated Al₂O₃ baseplate; provides mechanical mounting surface and primary heat path; rated for 3.0 kV isolation from terminals. |
Key Features
| Feature | Design Value |
|---|---|
| CoolSiC™ Gen 5 Schottky diode | Zero Qrr and soft reverse recovery eliminate snubber circuits and reduce system EMI in high-frequency rectifiers. |
| Integrated NTC thermistor | Direct die-temperature sensing (R₂₅ = 5 kΩ, B-value = 3433 K) enables closed-loop thermal protection without external sensors. |
| PressFIT contact technology | Eliminates solder reflow process; supports high-reliability interconnects in automotive-grade production with >20 N clamp force per terminal. |
| Al₂O₃ substrate with low RthJH | 1.56 K/W junction-to-heatsink resistance enables compact thermal design for 20 A continuous operation at 150 °C TJ. |
| IEC-qualified industrial reliability | Validated per IEC 60747 (semiconductors), IEC 60749 (discrete reliability), and IEC 60068 (environmental stress) for EV charger deployment. |
Applications
| EV DC Fast Charging Rectifier | Industrial AC-DC Power Supply |
|---|---|
Use Scenario: High-efficiency front-end rectification in 10–150 kW liquid-cooled EV DC chargers operating from 3-phase 400–690 V AC input. IC Role / Device Role / Timing Role: Dual parallel SiC Schottky diode performing uncontrolled rectification with zero reverse recovery, enabling >98% conversion efficiency at full load. Use Value: Reduces conduction loss by ~40% vs. silicon diodes and eliminates snubber losses, lowering heatsink mass by 30% in 150 kW designs. |
Use Scenario: High-reliability rectification stage in industrial UPS and motor drive power supplies exposed to wide ambient temperature swings (-40 to +85 °C). IC Role / Device Role / Timing Role: Main rectifier module delivering stable DC bus voltage with integrated thermal monitoring for overtemperature shutdown coordination. Use Value: Integrated NTC and 150 °C TJ rating allow continuous operation at elevated ambient without derating, improving system uptime in harsh environments. |
| Renewable Energy Inverter Input Stage | High-Voltage Test Equipment Power Stage |
Use Scenario: Grid-tied solar/wind inverter AC input rectification where low leakage and high dv/dt immunity are required for islanding detection. IC Role / Device Role / Timing Role: Uncontrolled rectifier providing galvanically isolated DC link with <0.058 mA reverse leakage at 1200 V and 150 °C. Use Value: Ultra-low Ir ensures minimal standby power loss and reliable voltage hold-up during grid interruptions. |
Use Scenario: Precision high-voltage DC source in semiconductor test equipment requiring stable, low-noise rectified output up to 1000 V DC. IC Role / Device Role / Timing Role: Low-stray-inductance (10 nH) rectifier minimizing transient overshoot during rapid load switching and step-response testing. Use Value: Predictable 10 nH LsCE enables accurate output voltage regulation and reduces need for external RC snubbers in Class I test fixtures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC rectifier module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS MUBW20-12E1 | 1200 V / 20 A SiC Schottky module; uses solder-mount TO-247-4L package; no integrated NTC; RthJH = 2.1 K/W. | Requires external temperature sensing; less suitable for space-constrained press-fit assemblies; higher thermal resistance limits peak power density. | Select when legacy PCB layout supports through-hole soldering and thermal management allows higher Rth. |
| Wolfspeed C3M0065120K | 1200 V / 20 A discrete SiC Schottky diode in TO-247-2L; no integrated NTC or PressFIT; VF = 1.7 V @ 20 A, 150 °C. | Demands external NTC placement and custom heatsink interface; lacks module-level creepage/clearance certification (dCreep = 6.3 mm). | Select for cost-sensitive designs where board-level integration and certification overhead can be managed externally. |
Compared with MUBW20-12E1 and C3M0065120K, DDB2U20N12W1RFB11BPSA1 uniquely combines PressFIT mountability, certified 3.0 kV isolation, integrated NTC, and 1.56 K/W thermal resistance-enabling faster time-to-market for IEC-compliant EV DC charger modules without custom thermal or sensing subsystems.
Availability
DDB2U20N12W1RFB11BPSA1 is available at Aetrix Electronics and suitable for EV DC fast charging systems, industrial AC-DC power supplies, and renewable energy inverter input stages requiring stable component supply, long lifecycle support, and certified high-voltage isolation.
Supply support for DDB2U20N12W1RFB11BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.
DDB2U20N12W1RFB11BPSA1 belongs to the EasyBRIDGE family-designed specifically for high-efficiency, high-reliability power conversion in electric vehicle infrastructure, emphasizing press-fit assembly, integrated thermal sensing, and SiC performance in compact module formats.
FAQ
What is the maximum continuous current rating for DDB2U20N12W1RFB11BPSA1?
The module is rated for 20 A RMS forward current per diode at heatsink temperature TH = 70 °C. Under forced-air or liquid cooling, it supports 25 A RMS per connector pin, but total module current must remain within thermal limits defined by RthJH = 1.56 K/W and TJ ≤ 150 °C. Derating curves are provided in Figure 5 of the datasheet.
Does DDB2U20N12W1RFB11BPSA1 require external gate driving or control circuitry?
No. As a passive SiC Schottky diode module, it operates without gate drive or control signals. It functions as an uncontrolled rectifier-conducting when anode voltage exceeds cathode voltage by ≥1.85 V-and requires only proper heatsinking, PressFIT mounting, and NTC biasing for temperature monitoring.
How is the NTC thermistor calibrated in DDB2U20N12W1RFB11BPSA1?
The NTC has R₂₅ = 5 kΩ ±5%, B₂₅/₁₀₀ = 3433 K, and is characterized per IEC 60539-1. Calibration uses the Steinhart-Hart equation with coefficients derived from R₂₅, R₁₀₀, and B-values. Application Note AN2019-07 provides recommended bias resistor values and ADC scaling for Infineon's XMC microcontrollers.
Can DDB2U20N12W1RFB11BPSA1 be used in parallel configurations?
Yes-its matched forward voltage (VF) and low thermal resistance enable current sharing across parallel modules. Design requires symmetrical PCB layout, identical heatsink contact pressure, and individual NTC monitoring. Parallel operation beyond two units requires active current balancing per Infineon's Application Note AP21002.
DDB2U20N12W1RFB11BPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™
- Package/Case:
- Module
- Packaging:
- Bulk
- Product Status:
- Active
- Diode Type:
- Single Phase
- Technology:
- Silicon Carbide Schottky
- Voltage - Peak Reverse (Max):
- 1.2 kV
- Current - Average Rectified (Io):
- 20 A
- Voltage - Forward (Vf) (Max) @ If:
- 1.85 V @ 20 A
- Current - Reverse Leakage @ Vr:
- 58 µA @ 1200 V
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- AG-EASY1B-1
DDB2U20N12W1RFB11BPSA1 FAQ
1.How can I place an order for DDB2U20N12W1RFB11BPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for DDB2U20N12W1RFB11BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DDB2U20N12W1RFB11BPSA1 reliable?
The price and inventory of DDB2U20N12W1RFB11BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DDB2U20N12W1RFB11BPSA1 is usually 5 days.
3.What payment methods are accepted for DDB2U20N12W1RFB11BPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DDB2U20N12W1RFB11BPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DDB2U20N12W1RFB11BPSA1?
DDB2U20N12W1RFB11BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DDB2U20N12W1RFB11BPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DDB2U20N12W1RFB11BPSA1?
For technical support, including DDB2U20N12W1RFB11BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DDB2U20N12W1RFB11BPSA1 requirements.
6.How does Aetrix verify that DDB2U20N12W1RFB11BPSA1 is sourced from the original manufacturer or authorized distributors?
All DDB2U20N12W1RFB11BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DDB2U20N12W1RFB11BPSA1 meets industry standards.
7.What is the process for return or replacement of DDB2U20N12W1RFB11BPSA1?
All DDB2U20N12W1RFB11BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with DDB2U20N12W1RFB11BPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DDB2U20N12W1RFB11BPSA1 part is unused and in its original packaging.
Return procedure for DDB2U20N12W1RFB11BPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DDB2U20N12W1RFB11BPSA1 Tags
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HDS10M-13
Diodes Incorporated
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CD-MBL106S
Bourns Inc.
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MB10S-13
Diodes Incorporated
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CD-MBL206SL
Bourns Inc.
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Micro Commercial Co
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Micro Commercial Co
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CD-MBL210S
Bourns Inc.
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BAS3007ARPPE6327HTSA1
Infineon Technologies
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Diodes Incorporated
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CD-MBL210SL
Bourns Inc.
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DF04M
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DF01M
Diodes Incorporated
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