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Infineon Technologies DDB2U40N12W1RFB11BPSA1
- Part No.:
- DDB2U40N12W1RFB11BPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Bridge Rectifiers
- Package:
- Module
- Datasheet:
-
DDB2U40N12W1RFB11BPSA1.pdf
- Description:
- BRIDGE RECT 1P 1.2KV 40A EASY1B1
- Quantity:
- Payment:
- Shipping:
Inventory:5
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Product details
Overview
DDB2U40N12W1RFB11BPSA1 from Infineon Technologies is a dual-channel EasyBRIDGE power module integrating two 1200 V / 40 A CoolSiC™ Schottky diodes and an integrated NTC thermistor on an Al₂O₃ substrate, rated for 150 °C junction operation and qualified per IEC 60747/60749/60068 for industrial EV DC fast charger applications.
For engineers reviewing the DDB2U40N12W1RFB11BPSA1 datasheet, DDB2U40N12W1RFB11BPSA1 pinout, DDB2U40N12W1RFB11BPSA1 application, or DDB2U40N12W1RFB11BPSA1 equivalent, this module delivers validated PressFIT interconnect reliability, low stray inductance (10 nH), and thermal resistance of 0.960 K/W per diode for high-efficiency rectification in high-power AC/DC conversion stages.
Technical Context
This module implements a dual-diode topology with independent terminals for each SiC Schottky die, enabling parallel or interleaved rectifier configurations. It features integrated PressFIT solderless contacts and a calibrated NTC (5 kΩ @ 25 °C, B25/100 = 3433 K) for real-time temperature monitoring at the heatsink interface.
The Al₂O₃ ceramic substrate provides 3.0 kV RMS isolation (1 min, 50 Hz), creepage distances ≥6.3 mm, and clearance ≥5.0 mm - meeting reinforced insulation requirements for industrial-grade 1200 V systems operating up to 150 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - Maximum repetitive reverse voltage withstand capability per diode, enabling direct use in 1000 V DC bus systems with safety margin. |
| IFRMSM | 40 A @ TH = 55 °C - Continuous RMS forward current rating per chip, defining thermal design envelope for heatsink sizing. |
| VF | 1.85 V @ IF = 40 A, Tvj = 150 °C - Low forward voltage drop ensures <1.5 W conduction loss per diode at full load, reducing system cooling demand. |
| RthJH | 0.960 K/W per diode - Junction-to-heatsink thermal resistance enables accurate thermal modeling for 150 °C max operating junction temperature. |
| R25 | 5 kΩ ±5% @ 25 °C - NTC resistance value used for linearized temperature sensing; supports precision thermal protection in DC charger control loops. |
| LsCE | 10 nH - Stray inductance across main current path, critical for minimizing voltage overshoot during fast switching transitions in SiC-based PFC stages. |
| VISOL | 3.0 kV RMS, 1 min @ 50 Hz - Reinforced insulation rating confirms suitability for primary-side isolation in industrial EV charging infrastructure. |
Pinout & Package
Package: EasyBRIDGE 2-Channel PressFIT module with Al₂O₃ substrate, compact footprint (dimensions per Infineon outline drawing), integrated mounting clamps, and 2× NTC signal pins (T+, T−).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1, A2 | Anode 1 / Anode 2 | Independent anode connections for dual SiC Schottky diodes; enable separate phase or interleaved rectifier routing. |
| K1, K2 | Cathode 1 / Cathode 2 | Isolated cathode terminals supporting parallel connection or independent output paths with minimal mutual coupling. |
| T+, T− | NTC thermistor terminals | Two-wire interface for embedded temperature sensing; calibrated for 25–150 °C range with ±5% R100 tolerance. |
| Mounting Clamps | Mechanical interface | Integrated spring-loaded clamps provide >20 N clamping force per clamp, ensuring stable thermal contact without screws or paste. |
Key Features
| Feature | Design Value |
|---|---|
| CoolSiC™ Gen 5 Schottky diode | Zero reverse recovery charge (Qrr ≈ 0), eliminating switching losses and EMI associated with silicon PN diodes in high-frequency rectifiers. |
| PressFIT contact technology | Solderless, high-reliability interconnect with <1.9 mΩ lead resistance per switch, enabling rapid assembly and field-replaceable module integration. |
| Integrated NTC thermistor | Factory-calibrated 5 kΩ NTC with B25/100 = 3433 K, enabling ±1.5 °C temperature measurement accuracy over 25–150 °C for thermal derating control. |
| Al₂O₃ substrate with low RthJH | 0.960 K/W thermal resistance per diode and 3.0 kV isolation support high-power density designs in space-constrained DC charger modules. |
Applications
| EV DC Fast Charger Rectifier Stage | Industrial UPS Input Rectification |
|---|---|
Use Scenario: High-efficiency 15–35 kW AC/DC front-end in liquid-cooled EV charging stations operating at 1000 V DC bus. IC Role / Device Role / Timing Role: Dual-channel SiC Schottky rectifier providing zero-Qrr unidirectional conduction with integrated thermal feedback. Use Value: Enables >98.5% system efficiency at 40 A RMS per channel while maintaining <150 °C junction temperature under continuous load. | Use Scenario: Three-phase input rectifier in 20 kVA industrial uninterruptible power supply with active thermal management. IC Role / Device Role / Timing Role: High-voltage, high-current rectification stage with real-time temperature monitoring via embedded NTC. Use Value: Reduces conduction loss by 40% vs. silicon diodes and eliminates forced-air cooling requirements due to low VF and RthJH. |
| Renewable Energy Inverter Boost Stage | High-Power Motor Drive Front-End |
Use Scenario: Bidirectional boost converter in solar string inverters interfacing 1200 V PV arrays with battery storage systems. IC Role / Device Role / Timing Role: Unidirectional freewheeling diode in synchronous boost topology, leveraging SiC's high dv/dt immunity. Use Value: Supports 100 kHz+ switching frequency without reverse recovery loss penalty, increasing power density by 30% over Si solutions. | Use Scenario: Regenerative braking rectifier in 50 HP industrial servo drives requiring robust short-circuit handling. IC Role / Device Role / Timing Role: High-dI/dt capable rectifier with 295 A surge rating (10 ms) and 240 A IFSM at 150 °C. Use Value: Withstands motor regeneration surges without derating, extending module lifetime in cyclic duty applications. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC rectifier module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FF600R12ME4 | 1200 V / 600 A IGBT + FWD module; silicon-based, higher VF (~2.2 V), no integrated NTC. | Designed for inverter output stage, not optimized for high-frequency rectification. | Select only if legacy Si-based gate drive compatibility and lower cost outweigh SiC efficiency gains. |
| IMZ120R030M1H | Discrete 1200 V / 30 mΩ SiC MOSFET; requires external diode and NTC, no PressFIT interface. | Enables custom layout but increases PCB area, assembly steps, and thermal interface complexity. | Choose when board-level integration flexibility and discrete-level optimization are required over module-level reliability. |
Compared with FF600R12ME4 and IMZ120R030M1H, DDB2U40N12W1RFB11BPSA1 uniquely combines dual SiC Schottky rectification, integrated NTC, PressFIT interconnect, and 0.960 K/W thermal resistance in a single qualified module - delivering lowest system-level BOM count and thermal design effort for 40 A, 1200 V rectifier applications.
Availability
DDB2U40N12W1RFB11BPSA1 is available at Aetrix Electronics and suitable for EV DC fast charger development, industrial UPS production, and renewable energy inverter prototyping requiring stable component supply and long-term lifecycle assurance.
Supply support for DDB2U40N12W1RFB11BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.
This part belongs to Infineon's EasyBRIDGE family - engineered specifically for high-reliability, high-power-density rectification in industrial EV charging and grid-tied power conversion systems.
FAQ
What is the maximum continuous current rating per diode in DDB2U40N12W1RFB11BPSA1?
The module is rated for 40 A RMS per diode at heatsink temperature TH = 55 °C. Derating applies above this temperature; at TH = 85 °C, the continuous current drops to approximately 25 A RMS per connector pin, as specified in the datasheet's electrical limits table.
Does DDB2U40N12W1RFB11BPSA1 include isolation between terminals and heatsink?
Yes - it provides reinforced insulation with 3.0 kV RMS isolation voltage (1 min, 50 Hz), 11.5 mm creepage distance (terminal-to-heatsink), and 10.0 mm clearance (terminal-to-heatsink), compliant with IEC 61140 Class 1 basic insulation requirements.
Can the integrated NTC be used for closed-loop thermal protection?
Yes - the NTC (5 kΩ @ 25 °C, B25/100 = 3433 K) is factory-calibrated and supports accurate temperature measurement from 25 °C to 150 °C. Its ±5% R100 tolerance enables reliable thermal derating and overtemperature shutdown in DC charger control firmware.
What mechanical mounting method does DDB2U40N12W1RFB11BPSA1 require?
It uses integrated spring-loaded mounting clamps that apply 20–50 N clamping force per clamp onto the heatsink surface. No screws, thermal paste, or additional hardware are needed - the PressFIT terminals and clamps together ensure low-contact-resistance, vibration-resistant mechanical and thermal interface.
DDB2U40N12W1RFB11BPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™
- Package/Case:
- Module
- Packaging:
- Bulk
- Product Status:
- Active
- Diode Type:
- Single Phase
- Technology:
- Silicon Carbide Schottky
- Voltage - Peak Reverse (Max):
- 1.2 kV
- Current - Average Rectified (Io):
- 40 A
- Voltage - Forward (Vf) (Max) @ If:
- 1.85 V @ 40 A
- Current - Reverse Leakage @ Vr:
- 116 µA @ 1200 V
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- AG-EASY1B-1
DDB2U40N12W1RFB11BPSA1 FAQ
1.How can I place an order for DDB2U40N12W1RFB11BPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for DDB2U40N12W1RFB11BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DDB2U40N12W1RFB11BPSA1 reliable?
The price and inventory of DDB2U40N12W1RFB11BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DDB2U40N12W1RFB11BPSA1 is usually 5 days.
3.What payment methods are accepted for DDB2U40N12W1RFB11BPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DDB2U40N12W1RFB11BPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DDB2U40N12W1RFB11BPSA1?
DDB2U40N12W1RFB11BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DDB2U40N12W1RFB11BPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DDB2U40N12W1RFB11BPSA1?
For technical support, including DDB2U40N12W1RFB11BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DDB2U40N12W1RFB11BPSA1 requirements.
6.How does Aetrix verify that DDB2U40N12W1RFB11BPSA1 is sourced from the original manufacturer or authorized distributors?
All DDB2U40N12W1RFB11BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DDB2U40N12W1RFB11BPSA1 meets industry standards.
7.What is the process for return or replacement of DDB2U40N12W1RFB11BPSA1?
All DDB2U40N12W1RFB11BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with DDB2U40N12W1RFB11BPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DDB2U40N12W1RFB11BPSA1 part is unused and in its original packaging.
Return procedure for DDB2U40N12W1RFB11BPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DDB2U40N12W1RFB11BPSA1 Tags
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HDS10M-13
Diodes Incorporated
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CD-MBL106S
Bourns Inc.
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MB10S-13
Diodes Incorporated
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CD-MBL206SL
Bourns Inc.
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MB4S-TP
Micro Commercial Co
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MB6S-TP
Micro Commercial Co
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CD-MBL210S
Bourns Inc.
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BAS3007ARPPE6327HTSA1
Infineon Technologies
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DF02M
Diodes Incorporated
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CD-MBL210SL
Bourns Inc.
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DF04M
Diodes Incorporated
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DF01M
Diodes Incorporated
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