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Infineon Technologies DDB2U60N07W1RFB58BPSA1
- Part No.:
- DDB2U60N07W1RFB58BPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Bridge Rectifiers
- Package:
- -
- Datasheet:
-
DDB2U60N07W1RFB58BPSA1.pdf
- Description:
- EASY STANDARD
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Product details
Overview
DDB2U60N07W1RFB58BPSA1 from Infineon is an EasyBRIDGE power module integrating a 650 V CoolSiC™ Schottky diode and a 1200 V SiC MOSFET in a single PressFIT package, rated for 60 A forward current and 15 A continuous drain current. It features integrated NTC thermistor (5 kΩ @ 25 °C), Al₂O₃ substrate (RthJH = 1.25 K/W diode, 2.02 K/W MOSFET), and 3.0 kV isolation. Used in high-efficiency DC fast chargers for EVs requiring compact, thermally robust bidirectional power conversion.
For engineers reviewing the DDB2U60N07W1RFB58BPSA1 datasheet, DDB2U60N07W1RFB58BPSA1 pinout, DDB2U60N07W1RFB58BPSA1 application, or DDB2U60N07W1RFB58BPSA1 equivalent, key selection criteria include its dual-device integration, PressFIT mounting compatibility, NTC-based thermal monitoring capability, and IEC-qualified industrial reliability for high-voltage DC/DC stages.
Technical Context
This module implements a half-bridge topology with discrete CoolSiC™ Gen 5 Schottky diode (VR = 650 V, IF = 60 A) and trench-gate SiC MOSFET (VDSS = 1200 V, RDS(on) = 52.9–114 mΩ across 25–175 °C). The integrated NTC (B25/100 = 3433 K) enables real-time junction temperature estimation via voltage divider readout.
Electrical isolation is achieved via Al₂O₃ ceramic substrate (CTI > 200, RTI = 140 °C) with 3.0 kV RMS test voltage. Stray inductance is minimized to 15 nH, and terminal-to-chip resistances are specified at 2.2 mΩ (AA′+CC′) and 3.8 mΩ (CC′+EE′), supporting low-loss high-frequency switching up to 100 kHz in DC charger PFC and output rectification stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VR / VDSS | 650 V (diode reverse blocking), 1200 V (MOSFET drain-source) - supports 800 V DC bus systems with margin for transients |
| IF / ID | 60 A (diode RMS), 15 A (MOSFET DC) - defines continuous conduction capability in bidirectional DC/DC converters |
| RDS(on) | 52.9 mΩ typ. @ 25 °C, 114 mΩ max. @ 175 °C - determines conduction loss and thermal derating envelope |
| VF (diode) | 1.45 V @ 60 A, 25 °C - sets forward conduction loss and thermal load on diode die |
| NTC R25 | 5 kΩ ±5% @ 25 °C - enables calibrated temperature sensing with standard ADC interface circuits |
| Isolation voltage | 3.0 kV RMS, 1 min - meets reinforced insulation requirements for EV charging safety standards |
| Stray inductance | 15 nH - limits voltage overshoot during turn-off, enabling reliable 100 kHz+ switching |
Pinout & Package
Package: EasyBRIDGE 12-pin PressFIT module with integrated clamps, Al₂O₃ ceramic substrate, and 24 g mass. Designed for direct press-in mounting onto copper baseplates without soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1, A2 | Diode anode | High-current input for freewheeling path; dual-pin parallel reduces current density and contact resistance |
| K1, K2 | Diode cathode | Connects to DC link node; paired pins minimize loop inductance in high-di/dt operation |
| D1, D2 | MOSFET drain | High-side switch output; tied internally to diode anodes in half-bridge configuration |
| S1, S2 | MOSFET source | Power ground reference; also serves as body diode cathode and NTC return path |
| G1, G2 | MOSFET gate | Dual gate terminals reduce gate loop inductance and improve switching consistency |
| T1, T2 | NTC terminals | Direct access to integrated thermistor; enables two-wire Kelvin sensing for accurate thermal feedback |
Key Features
| Feature | Design Value |
|---|---|
| Integrated CoolSiC™ Schottky + SiC MOSFET | Enables zero-recovery-loss diode operation and high-temperature MOSFET switching in one footprint |
| PressFIT contact technology | Eliminates solder reflow process; ensures repeatable thermal interface resistance and mechanical stability under thermal cycling |
| Embedded NTC thermistor (5 kΩ) | Provides direct die-adjacent temperature monitoring without external sensor placement uncertainty |
| Al₂O₃ substrate with RthJH = 1.25 K/W (diode) | Reduces thermal bottleneck between SiC die and heatsink, enabling higher power density in compact chargers |
| 3.0 kV isolation & CTI > 200 | Meets reinforced insulation requirements for 1000 V DC EV charging systems per IEC 62109 and UL 62368 |
Applications
| EV DC Fast Charger Output Stage | Industrial Bidirectional DC/DC Converter |
|---|---|
|
Use Scenario: 15–350 kW DC output stage converting isolated 800 V bus to vehicle battery voltage with regenerative capability. IC Role / Device Role / Timing Role: Dual-device power stage performing synchronous rectification and active clamping using shared gate drive timing. Use Value: 650 V diode + 1200 V MOSFET pairing enables 1000 V system compliance while minimizing conduction loss and thermal stress during 60 A continuous output. |
Use Scenario: 48–800 V bidirectional converter in energy storage systems requiring galvanic isolation and high efficiency across load ranges. IC Role / Device Role / Timing Role: Half-bridge power switch with integrated NTC enabling adaptive dead-time control based on real-time die temperature. Use Value: Integrated 5 kΩ NTC allows closed-loop thermal management without PCB space penalty, improving long-term reliability under partial-load cycling. |
| Onboard Charger (OBC) PFC Boost Stage | Renewable Energy Grid-Tie Inverter |
|
Use Scenario: Active front-end PFC stage in 11 kW OBCs operating at 100 kHz with THD < 5%. IC Role / Device Role / Timing Role: High-voltage boost switch with body diode used for zero-voltage switching (ZVS) transitions. Use Value: Low 15 nH stray inductance and 52.9 mΩ RDS(on) reduce switching losses and EMI generation, meeting CISPR-25 Class 5 limits. |
Use Scenario: Medium-voltage string inverter stage interfacing PV arrays to 1000 V DC grids with reactive power support. IC Role / Device Role / Timing Role: Unidirectional power switch in NPC or T-type inverter topologies requiring high blocking voltage and low conduction loss. Use Value: 1200 V VDSS rating and 2.02 K/W MOSFET RthJH allow operation at 175 °C junction, increasing inverter uptime in desert deployments. |
Availability
DDB2U60N07W1RFB58BPSA1 is available at Aetrix Electronics and suitable for EV DC fast chargers, industrial bidirectional DC/DC converters, and onboard charger PFC stages requiring stable component supply, qualified industrial reliability, and PressFIT assembly compatibility.
Supply support for DDB2U60N07W1RFB58BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensors for automotive, industrial, and renewable energy applications.
This part belongs to the EasyBRIDGE family of integrated power modules, designed specifically for high-efficiency, high-reliability EV charging and industrial power conversion where compactness, thermal performance, and system-level qualification are critical.
FAQ
What gate driver voltage range is recommended for the MOSFET in DDB2U60N07W1RFB58BPSA1?
The MOSFET requires VGS(on) = 15–18 V and VGS(off) = –5 to 0 V for reliable switching. Infineon recommends gate drivers with negative turn-off capability (e.g., 1ED34xx series) to suppress parasitic turn-on and ensure robust operation at high dv/dt. Gate drive strength must support QG = 0.045 µC with < 100 ns rise/fall times.
How is the integrated NTC thermistor electrically connected and calibrated?
The NTC is accessed via dedicated T1/T2 terminals, forming a two-terminal device with R25 = 5 kΩ ±5% and B25/100 = 3433 K. Calibration uses the Steinhart-Hart equation with coefficients provided in Infineon Application Note AN2009-10. No internal signal conditioning is included - external voltage divider and ADC are required.
Does DDB2U60N07W1RFB58BPSA1 support paralleling multiple modules?
No - this module is not characterized or qualified for parallel operation. Its PressFIT contacts, thermal coupling, and internal current sharing are optimized for single-module use. For higher current, Infineon specifies discrete die variants or larger EasyBRIDGE SKiM modules with matched dynamic parameters.
What is the maximum allowable mounting force per clamp during PressFIT installation?
The module specifies a mounting force of 20–50 N per clamp. Exceeding 50 N risks ceramic substrate cracking or terminal deformation. Force must be applied evenly and symmetrically using torque-controlled tools; Infineon provides detailed mounting guidelines in Application Note AN2022-04 to ensure consistent thermal resistance and contact integrity.
DDB2U60N07W1RFB58BPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tray
- Product Status:
- Active
- Diode Type:
- -
- Technology:
- -
- Voltage - Peak Reverse (Max):
- -
- Current - Average Rectified (Io):
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Current - Reverse Leakage @ Vr:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
DDB2U60N07W1RFB58BPSA1 FAQ
1.How can I place an order for DDB2U60N07W1RFB58BPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for DDB2U60N07W1RFB58BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DDB2U60N07W1RFB58BPSA1 reliable?
The price and inventory of DDB2U60N07W1RFB58BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DDB2U60N07W1RFB58BPSA1 is usually 5 days.
3.What payment methods are accepted for DDB2U60N07W1RFB58BPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DDB2U60N07W1RFB58BPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DDB2U60N07W1RFB58BPSA1?
DDB2U60N07W1RFB58BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DDB2U60N07W1RFB58BPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DDB2U60N07W1RFB58BPSA1?
For technical support, including DDB2U60N07W1RFB58BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DDB2U60N07W1RFB58BPSA1 requirements.
6.How does Aetrix verify that DDB2U60N07W1RFB58BPSA1 is sourced from the original manufacturer or authorized distributors?
All DDB2U60N07W1RFB58BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DDB2U60N07W1RFB58BPSA1 meets industry standards.
7.What is the process for return or replacement of DDB2U60N07W1RFB58BPSA1?
All DDB2U60N07W1RFB58BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with DDB2U60N07W1RFB58BPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DDB2U60N07W1RFB58BPSA1 part is unused and in its original packaging.
Return procedure for DDB2U60N07W1RFB58BPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DDB2U60N07W1RFB58BPSA1 Tags
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HDS10M-13
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CD-MBL106S
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CD-MBL210S
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BAS3007ARPPE6327HTSA1
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DF04M
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