Infineon Technologies DF160R12W2H3FB11BOMA1

Overview

DF160R12W2H3FB11BOMA1 from Infineon Technologies is a 1200 V, 160 A dual-channel IGBT module with integrated SiC Schottky bypass diode and NTC temperature sensor, designed for high-efficiency solar inverters and industrial motor drives. It features H3-speed IGBTs, low switching losses (Eon = 0.35 mJ, Eoff = 1.40 mJ at Tvj = 150°C), Al₂O₃ substrate, and PressFIT contact technology.

For engineers reviewing the DF160R12W2H3FB11BOMA1 datasheet, DF160R12W2H3FB11BOMA1 pinout, DF160R12W2H3FB11BOMA1 application, or DF160R12W2H3FB11BOMA1 equivalent, key selection criteria include VCES = 1200 V, IC nom = 160 A, RthJC(IGBT) = 0.65 K/W, integrated NTC (R25 = 5.0 kΩ), and thinQ H SiC diode co-packaging.

Technical Context

This module integrates two high-speed H3 IGBTs and two thinQ H 1200 V SiC Schottky diodes in a half-bridge configuration, enabling fast switching (tr = 0.012 µs, tf = 0.025 µs at Tvj = 150°C) with low conduction loss (VCE sat = 1.75 V at IC = 20 A, Tvj = 150°C). The NTC thermistor (B25/100 = 3433 K) provides real-time junction temperature monitoring for thermal protection.

Its PressFIT interconnect eliminates soldering, while the Al₂O₃ substrate ensures low thermal resistance (RthJC = 0.65 K/W per IGBT, 1.20 K/W per diode) and high isolation (VISOL = 2.5 kV RMS). Stray inductance is minimized to 20 nH, supporting stable operation in high-di/dt solar and UPS applications.

Key Specifications

Pinout & Package

DF160R12W2H3FB11BOMA1 uses a 12-pin PressFIT-compatible housing (package code: B11) with isolated baseplate. Pin assignment follows Infineon's standard half-bridge IGBT module layout: pins 1–2 (Emitter1), 3–4 (Collector1), 5–6 (Gate1), 7–8 (Emitter2), 9–10 (Collector2), 11–12 (Gate2); NTC terminals are integrated into pins 1 and 2 (Emitter1 side).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT module applications.

Compared with FF150R12ME4 and FS150R12KE3, DF160R12W2H3FB11BOMA1 delivers superior efficiency via SiC diode integration and lower thermal resistance, making it optimal for next-generation solar and ESS systems demanding >98.5% conversion efficiency and compact thermal design.

Availability

DF160R12W2H3FB11BOMA1 is available at Aetrix Electronics and suitable for solar inverters, industrial motor drives, uninterruptible power supplies, and energy storage system converters requiring stable component supply and long-term lifecycle support.

Supply support for DF160R12W2H3FB11BOMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive MCUs, and security solutions, with global manufacturing and R&D centers.

This part belongs to Infineon's PrimePACK™ 2 family of high-power IGBT modules, engineered for high-efficiency, high-reliability renewable energy and industrial drive applications requiring robust thermal performance and integrated sensing.

FAQ

What is the maximum allowable gate-emitter voltage for DF160R12W2H3FB11BOMA1?

The absolute maximum gate-emitter peak voltage is ±20 V. Operation beyond this risks permanent gate oxide damage. Recommended gate drive is ±15 V with 12 Ω series resistance for both turn-on and turn-off to achieve specified switching times (td on = 0.028 µs, td off = 0.35 µs at Tvj = 150°C) and minimize oscillation.

Does DF160R12W2H3FB11BOMA1 require external freewheeling diodes?

No. It integrates thinQ H 1200 V SiC Schottky diodes in anti-parallel with each IGBT, providing zero reverse recovery charge (Qr ≤ 0.25 µC) and eliminating need for external diodes in standard half-bridge configurations. This reduces component count, PCB area, and EMI generation.

How is the NTC thermistor electrically connected and calibrated?

The NTC is internally bonded between pins 1 and 2 (Emitter1 side) with R25 = 5.0 kΩ ±5%, B25/100 = 3433 K. Its resistance vs. temperature curve follows the Steinhart-Hart equation using the provided B-values; no external calibration is required when used with standard analog front-end circuits compliant with Infineon's AN2015-05.

What mechanical mounting force is required for reliable PressFIT contact?

A clamping force of 40–80 N per terminal is required to ensure low-contact-resistance and stable thermal interface. Infineon specifies minimum 40 N to achieve <0.1 mΩ contact resistance and full-rated RthCH (0.55 K/W for IGBT, 0.80 K/W for diode); exceeding 80 N may deform terminal plating.