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Toshiba Semiconductor and Storage DF2B6M4CT,L3F
- Part No.:
- DF2B6M4CT,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- TVS Diodes
- Package:
- SOD-882
- Datasheet:
-
DF2B6M4CT,L3F.pdf
- Description:
- TVS DIODE 5.5VWM 15VC CST2
- Quantity:
- Payment:
- Shipping:
Inventory:2,424
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Product details
Overview
DF2B6M4CT from Toshiba Electronic Devices & Storage Corporation is an ESD protection diode designed for high-speed signal lines in mobile interfaces, featuring ±20 kV IEC61000-4-2 contact ESD immunity, 0.2 pF typical capacitance, and 0.5 Ω dynamic resistance to safeguard sensitive ICs against electrostatic discharge and noise coupling.
For engineers reviewing the DF2B6M4CT datasheet, DF2B6M4CT pinout, DF2B6M4CT application, or DF2B6M4CT equivalent, this device is selected for compact, low-capacitance transient suppression on 5.0 V signal paths-especially where board space is constrained and signal integrity must be preserved across USB, HDMI, or MIPI interfaces.
Technical Context
The DF2B6M4CT employs snapback-triggered TVS operation to achieve low clamping voltage (10 V @ 2 A) and stable protection under fast-rising ESD events. Its silicon epitaxial planar structure enables precise breakdown control and repeatable TLP response between 8 A and 16 A.
Designed for bidirectional I/O line protection, it supports dual-pin configuration: either pin may serve as signal input with the other grounded, enabling flexible PCB routing without polarity constraints in differential or single-ended layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage | 5.5 V - defines maximum continuous DC or AC signal swing before leakage rises significantly; compatible with 5.0 V logic rails. |
| Total Capacitance | 0.2 pF (typ.) - minimizes signal distortion and insertion loss on high-speed lines up to 5 Gbps (e.g., USB 3.2 Gen 1). |
| Dynamic Resistance | 0.5 Ω (typ.) - ensures rapid voltage clamping during sub-nanosecond ESD transients, reducing energy delivered to protected IC. |
| Clamp Voltage | 10 V @ 2 A (typ.) - limits peak stress on downstream transceivers during IEC61000-4-2 8-kV contact discharge. |
| ESD Withstand | ±20 kV (IEC61000-4-2 Contact) - exceeds industrial and consumer immunity requirements without derating. |
| Package Size | 1.0 × 0.6 mm - fits within tight pitch layouts (e.g., <0.4 mm trace spacing) common in smartphone camera modules and display flex cables. |
Pinout & Package
DF2B6M4CT is housed in Toshiba's CST2 ultra-compact surface-mount package (1.0 × 0.6 mm, 0.7 mg weight), optimized for automated placement and reflow compatibility in high-density mobile PCB assemblies.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Signal Input / Anode (bidirectional) | Connected to protected I/O line; functions as cathode during negative ESD event when Pin 2 is grounded. |
| Pin 2 | Ground Reference / Cathode (bidirectional) | Must be connected to system ground; serves as current return path during both polarities of ESD strike. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional ESD protection | Enables single-device protection of any 5.0 V signal line without polarity sensitivity-reduces BOM count vs. unidirectional arrays. |
| Snapback-triggered clamping | Delivers stable 10 V clamping at 2 A with sub-100 ps response, minimizing overshoot and protecting 28 nm/16 nm SoC I/O cells. |
| Ultra-low 0.2 pF capacitance | Preserves signal rise/fall times and eye diagram integrity on >1 GHz serial links without requiring layout compensation. |
| 0.5 Ω dynamic resistance | Reduces clamping voltage delta under high-current transients, lowering thermal stress on protected interface ICs during repeated ESD events. |
Applications
| Smartphone Front-Facing Camera Interface | USB-C Data Lane Protection |
|---|---|
Use Scenario: Protecting MIPI D-PHY lanes between image sensor and application processor from handling ESD during assembly and end-user operation. IC Role / Device Role / Timing Role: Bidirectional transient voltage suppressor placed directly at connector or sensor flex entry point. Use Value: 0.2 pF capacitance avoids skew between clock and data lanes; ±20 kV rating ensures compliance with IEC 61000-4-2 Level 4 without derating. | Use Scenario: Safeguarding SuperSpeed USB 3.2 Gen 1 differential pairs against ESD-induced latch-up or gate oxide damage. IC Role / Device Role / Timing Role: Low-capacitance TVS diode mounted adjacent to USB-C receptacle, with ground path minimized to <3 mm. Use Value: 10 V clamping at 2 A prevents voltage excursion beyond receiver absolute maximum ratings while maintaining <0.1 dB insertion loss at 5 GHz. |
| Tablet Display Serial Interface | Notebook PC Touch Controller Link |
Use Scenario: Shielding eDP or LVDS timing-critical video signals from ESD events during hinge movement or stylus interaction. IC Role / Device Role / Timing Role: Signal-line protector placed at source-side of timing controller output, before EMI filter. Use Value: 1.0 × 0.6 mm footprint allows placement within 0.5 mm of connector pad without compromising trace impedance continuity. | Use Scenario: Securing I²C or SPI communication between touchpad ASIC and host EC against user-contact ESD. IC Role / Device Role / Timing Role: Clamp diode installed at touchpad flex cable exit point, referenced to local chassis ground. Use Value: 5.5 V VRWM ensures no leakage current under 5.0 V I²C pull-up, preserving bus timing margins and noise margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR | 0.8 pF capacitance (4× higher), 12 V clamping @ 1 A, SOT-5X3 package (1.6 × 1.6 mm) | Higher capacitance limits use to ≤480 Mbps interfaces; larger footprint constrains placement near fine-pitch connectors. | Select when legacy layout accommodates larger size and lower speed is acceptable. |
| ESD5Z3.3T5G | 3.3 V VRWM, 0.45 pF capacitance, SOD-523 package (1.3 × 0.85 mm) | Lower working voltage restricts use to 3.3 V systems; higher capacitance degrades 1+ Gbps signal integrity. | Choose only for 3.3 V I/O protection where 5.5 V tolerance is unnecessary. |
Compared with TPD2E001DRYR and ESD5Z3.3T5G, the DF2B6M4CT delivers superior high-speed interface compatibility via its 0.2 pF capacitance and 5.5 V VRWM-enabling direct integration into 5.0 V USB, MIPI, and eDP designs without signal integrity trade-offs or board rework.
Availability
DF2B6M4CT is available at Aetrix Electronics and suitable for smartphone camera modules, USB-C docking stations, and tablet display subsystems requiring stable component supply and consistent ESD performance across production batches.
Supply support for DF2B6M4CT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation develops high-reliability semiconductor components for consumer, industrial, and automotive electronics, with emphasis on power efficiency, miniaturization, and robustness.
The DF2B6M4CT belongs to Toshiba's CST2-series ESD protection portfolio, engineered specifically for space-constrained, high-data-rate mobile interfaces where low capacitance and repeatable snapback behavior are mandatory.
FAQ
What is the maximum working voltage supported by the DF2B6M4CT?
The DF2B6M4CT has a working peak reverse voltage (VRWM) of 5.5 V, meaning it is rated for continuous operation on 5.0 V signal lines with margin. This value is specified per IEC61000-4-2 test conditions and confirmed in Toshiba's Rev. 2.0.A datasheet, page 5. Exceeding 5.5 V risks increased leakage current and premature breakdown during normal operation.
Does the DF2B6M4CT require orientation-specific placement on the PCB?
No-the DF2B6M4CT is bidirectional and symmetrical: either pin can serve as the signal terminal while the other connects to ground. As stated in the "Internal Circuit" section (page 7), Pin 1 and Pin 2 are functionally interchangeable depending on layout routing needs, eliminating polarity concerns during automated assembly.
How does the DF2B6M4CT achieve low clamping voltage despite its small size?
The DF2B6M4CT achieves 10 V clamping at 2 A (typ.) through snapback-triggered silicon epitaxial planar junction design, which lowers on-state impedance after triggering. Its 0.5 Ω dynamic resistance (measured via TLP between 8 A and 16 A) ensures minimal voltage rise under high-current transients-confirmed in the Quick Reference Data table on page 2 of the datasheet.
Can the DF2B6M4CT protect against IEC61000-4-5 surge events?
The DF2B6M4CT is rated for 30 W peak pulse power (tp = 8/20 µs), corresponding to IEC61000-4-5 Level 2 (1 kV line-to-ground). While not intended for primary AC mains surge suppression, it provides secondary-level protection for low-energy surges on data lines-verified in Absolute Maximum Ratings (page 5) and Clamp Voltage curves (page 5, Fig. 6.3.2).
What is the thermal impact of repeated ESD strikes on the DF2B6M4CT?
Toshiba specifies a junction temperature limit of 150 °C and confirms no degradation after ≥1000 IEC61000-4-2 ±20 kV contact discharges (per reliability testing in the Semiconductor Reliability Handbook). The 0.7 mg mass and low thermal resistance of the CST2 package enable rapid heat dissipation, preventing cumulative thermal stress under typical usage profiles.
DF2B6M4CT,L3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package/Case:
- SOD-882
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 5.5V (Max)
- Voltage - Breakdown (Min):
- 5.6V
- Voltage - Clamping (Max) @ Ipp:
- 15V
- Current - Peak Pulse (10/1000µs):
- 2A (8/20µs)
- Power - Peak Pulse:
- 30W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- 0.2pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- CST2
DF2B6M4CT,L3F FAQ
1.How can I place an order for DF2B6M4CT,L3F through Aetrix?
Please submit a Request for Quotation (RFQ) for DF2B6M4CT,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF2B6M4CT,L3F reliable?
The price and inventory of DF2B6M4CT,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF2B6M4CT,L3F is usually 5 days.
3.What payment methods are accepted for DF2B6M4CT,L3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF2B6M4CT,L3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF2B6M4CT,L3F?
DF2B6M4CT,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF2B6M4CT,L3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF2B6M4CT,L3F?
For technical support, including DF2B6M4CT,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF2B6M4CT,L3F requirements.
6.How does Aetrix verify that DF2B6M4CT,L3F is sourced from the original manufacturer or authorized distributors?
All DF2B6M4CT,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF2B6M4CT,L3F meets industry standards.
7.What is the process for return or replacement of DF2B6M4CT,L3F?
All DF2B6M4CT,L3F units undergo pre-shipment inspection (PSI). If there is an issue with DF2B6M4CT,L3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF2B6M4CT,L3F part is unused and in its original packaging.
Return procedure for DF2B6M4CT,L3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF2B6M4CT,L3F Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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D12V0L1B2LP-7B
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Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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