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Infineon Technologies DF75R12W1H4FB11BOMA1
- Part No.:
- DF75R12W1H4FB11BOMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Bridge Rectifiers
- Package:
- Module
- Datasheet:
-
DF75R12W1H4FB11BOMA1.pdf
- Description:
- BRIDGE RECT 1PHASE 1.2KV 50A
- Quantity:
- Payment:
- Shipping:
Inventory:5,099
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Product details
Overview
DF75R12W1H4FB11BOMA1 from Infineon Technologies is a 1200 V, 75 A dual-channel IGBT module with integrated bypass diode, inverse-polarity protection diodes (A & B), and NTC thermistor - designed for solar inverter chopper stages and brake energy recovery circuits. It delivers low switching losses (Eon = 0.65 mJ, Eoff = 1.70 mJ at Tvj = 125°C), 0.65 K/W IGBT junction-to-case thermal resistance, and PressFIT contact technology for solderless mounting.
For engineers reviewing the DF75R12W1H4FB11BOMA1 datasheet, DF75R12W1H4FB11BOMA1 pinout, DF75R12W1H4FB11BOMA1 application, or DF75R12W1H4FB11BOMA1 equivalent, key selection criteria include its 1200 V VCES rating, integrated NTC (R25 = 5.00 kΩ, B25/100 = 3433 K), dual-diode topology with separate thermal resistances (RthJC = 0.45 K/W for bypass diode), and isolation test voltage of 2.5 kV RMS.
Technical Context
This module integrates one IGBT chopper switch (VCES = 1200 V, IC nom = 75 A), one high-current bypass diode (IFRMSM = 50 A), two inverse-polarity protection diodes (A: IFRMSM = 50 A; B: IFRMSM = 30 A), and an NTC thermistor - all on a single Al₂O₃ substrate with low thermal resistance. Its PressFIT terminals eliminate solder reflow requirements while maintaining 11.5 mm creepage distance (terminal-to-heatsink).
The IGBT exhibits VCE(sat) = 2.45 V (typ.) at IC = 25 A, VGE = 15 V, Tvj = 125°C; gate charge QG = 11.0 µC; and short-circuit withstand capability of 150 A for ≤10 µs at VCC = 900 V. Diode reverse recovery is characterized by Qr = 0.25 µC (Tvj = 125°C) and Erec = 0.03 mJ.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 1200 V - maximum blocking voltage for IGBT switch; enables use in 1000 V DC-link solar inverters. |
| IC nom | 75 A - continuous collector current per IGBT at TC = 80°C; defines steady-state power stage capacity. |
| VF (bypass diode) | 0.80 V (typ., Tvj = 150°C, IF = 50 A) - low forward drop reduces conduction loss in freewheeling paths. |
| RthJC (IGBT) | 0.65 K/W - junction-to-case thermal resistance; determines heatsink sizing for 175°C max junction operation. |
| R25 (NTC) | 5.00 kΩ at 25°C - calibrated resistance for temperature monitoring; supports ±5% R100 deviation. |
| Visol | 2.5 kV RMS - isolation test voltage at 50 Hz for 1 min; meets reinforced insulation requirements for PV systems. |
| LsCE | 30 nH - module stray inductance; impacts voltage overshoot during turn-off and snubber design. |
| RGint | 0 Ω - internal gate resistor; allows full external gate drive control without parasitic impedance. |
Pinout & Package
DF75R12W1H4FB11BOMA1 uses a 12-pin PressFIT package (PG-HSOF-12-1) with insulated baseplate. Pin assignment follows Infineon's standard layout for HSOF modules: three main power terminals (C1, E1, C2/E2), four gate-emitter pairs (G1/E1, G2/E2, G3/E3, G4/E4), two NTC pins (T+, T−), and two auxiliary terminals for diode cathodes/anodes.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| C1 | IGBT1 collector | Main high-side switching node; rated for 75 A continuous, 150 A peak. |
| E1 | IGBT1 emitter / common emitter | Shared emitter node for IGBT1 and bypass diode; connects to DC-link negative. |
| C2/E2 | Bypass diode anode / IGBT2 collector | Combined terminal for chopper diode anode and second IGBT collector; handles 60 A RMS rectifier output. |
| G1, E1 | IGBT1 gate & emitter | Isolated gate drive interface; 0 Ω internal RG enables precise external gate control. |
| G3, E3 | Inverse-polarity diode A gate & emitter | Not applicable - diodes are uncontrolled; these pins are unused (no gate connection). |
| T+, T− | NTC thermistor terminals | Two-wire analog temperature sensing; R25 = 5.00 kΩ, B25/100 = 3433 K. |
| A1, K1 | Verpolschutz Diode A anode & cathode | Reverse polarity protection path; rated VRRM = 1200 V, IFRMSM = 50 A. |
| A2, K2 | Verpolschutz Diode B anode & cathode | Secondary reverse polarity path; rated VRRM = 1200 V, IFRMSM = 30 A. |
Key Features
| Feature | Design Value |
|---|---|
| PressFIT contact technology | Solderless, high-reliability interconnect; eliminates thermal fatigue from reflow cycles and enables rapid assembly. |
| Integrated NTC thermistor | R25 = 5.00 kΩ with B25/100 = 3433 K; provides direct junction temperature feedback for overtemperature shutdown. |
| Al₂O₃ ceramic substrate | 0.45 K/W RthJC (bypass diode); ensures efficient heat transfer from die to baseplate in high-power chopper operation. |
| Dual inverse-polarity diodes | Separate A (50 A RMS) and B (30 A RMS) paths; enables redundant reverse-voltage protection in battery-connected DC links. |
| Low stray inductance | LsCE = 30 nH; minimizes VCE overshoot during turn-off, reducing snubber losses and EMI filter burden. |
Applications
| Solar Inverter Brake Chopper | Industrial DC Link Protection |
|---|---|
|
Use Scenario: Dissipating regenerative energy during motor deceleration in string inverters with 1000 V DC bus. IC Role / Device Role / Timing Role: IGBT chopper switch controls duty cycle of energy dump into braking resistor; bypass diode provides freewheeling path. Use Value: Low Eoff (1.70 mJ at Tvj = 125°C) enables high-frequency chopper operation (>5 kHz) without excessive thermal stress. |
Use Scenario: Preventing damage from reverse polarity connection in off-grid battery storage systems with bidirectional DC/DC converters. IC Role / Device Role / Timing Role: Verpolschutz Diode A conducts fault current during miswiring; Diode B provides backup path if A fails. Use Value: Dual 1200 V-rated diodes (A: 50 A RMS, B: 30 A RMS) sustain >290 A surge (tp = 10 ms) without latch-up. |
| Photovoltaic String Monitoring Unit | EV Onboard Charger Precharge Circuit |
|
Use Scenario: Isolating and monitoring individual PV strings under partial shading or ground-fault conditions. IC Role / Device Role / Timing Role: IGBT acts as fast-acting DC disconnect switch; NTC monitors substrate temperature during fault clearing. Use Value: 2.5 kV isolation voltage and 11.5 mm creepage distance meet IEC 62109 safety requirements for Class II PV equipment. |
Use Scenario: Controlling inrush current into high-capacitance DC-link filters during EV charger startup. IC Role / Device Role / Timing Role: IGBT chopper limits precharge current via PWM; bypass diode handles steady-state conduction after soft-start. Use Value: VF = 0.80 V (bypass diode, 50 A) reduces conduction loss during sustained precharge, improving efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT chopper module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FZ75R12KE3 | Same 1200 V/75 A rating but TO-247-3L discrete IGBT + separate diode; no integrated NTC or PressFIT. | Lacks monolithic thermal coupling and embedded sensing; requires additional PCB area and thermal interface design. | Choose when retrofitting legacy designs with through-hole sockets or where discrete replacement is mandated. |
| FF75R12RT4 | 1200 V/75 A TRENCHSTOP™ IGBT module with 62 nH LsCE and no inverse-polarity diodes; includes NTC. | Higher stray inductance increases voltage overshoot risk; lacks dual reverse-protection diodes for battery interfaces. | Prefer for pure inverter applications without reverse-polarity exposure; avoid where DC-link polarity reversal is possible. |
Compared with FZ75R12KE3 and FF75R12RT4, DF75R12W1H4FB11BOMA1 uniquely combines PressFIT assembly, dual inverse-polarity diodes, and sub-30 nH stray inductance - making it optimal for space-constrained, safety-critical solar chopper and battery-protection designs.
Availability
DF75R12W1H4FB11BOMA1 is available at Aetrix Electronics and suitable for solar inverter brake choppers, industrial DC link protection circuits, photovoltaic string monitoring units, and EV onboard charger precharge stages requiring stable component supply and long-term lifecycle support.
Supply support for DF75R12W1H4FB11BOMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
This part belongs to Infineon's PrimePACK™ 2 family of high-power IGBT modules, engineered for high-efficiency, high-reliability chopper and inverter stages in solar, traction, and industrial motor drives.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The DF75R12W1H4FB11BOMA1 supports Tvj op up to 150°C for inverter and brake-chopper operation, and 125°C for rectifier mode. Its absolute maximum junction temperature (Tvj max) is 175°C for the IGBT and 150°C for diodes - verified under pulsed conditions per datasheet Section 4.
Does this module require external gate resistors?
Yes - the module has 0 Ω internal gate resistance (RGint), so external gate resistors must be used to control dv/dt, di/dt, and switching losses. Recommended values are RGon = 10 Ω and RGoff = 10 Ω for balanced turn-on/turn-off energy (Eon = 0.65 mJ, Eoff = 1.70 mJ at Tvj = 125°C).
How is the NTC thermistor calibrated, and what tolerance applies at 100°C?
The NTC has R25 = 5.00 kΩ at 25°C and B25/100 = 3433 K. Its R100 deviation is specified as ±5% (∆R/R), meaning resistance at 100°C falls between 468 Ω and 518 Ω - enabling accurate temperature monitoring across the -40°C to 150°C operating range.
Can the bypass diode and inverse-polarity diodes operate simultaneously?
No - the bypass diode (rated 50 A RMS) and Verpolschutz Diodes A/B serve distinct functions: the bypass diode freewheels chopper current, while Diodes A/B conduct only during reverse-polarity faults. Their thermal paths are isolated (RthJC = 0.45 K/W vs. 0.90/1.35 K/W), preventing simultaneous conduction under normal operation.
DF75R12W1H4FB11BOMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Module
- Packaging:
- Tray
- Product Status:
- Discontinued at Digi-Key
- Diode Type:
- Single Phase
- Technology:
- Standard
- Voltage - Peak Reverse (Max):
- 1.2 kV
- Current - Average Rectified (Io):
- 50 A
- Voltage - Forward (Vf) (Max) @ If:
- 800 mV @ 50 A
- Current - Reverse Leakage @ Vr:
- 100 µA @ 1200 V
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- -
DF75R12W1H4FB11BOMA1 FAQ
1.How can I place an order for DF75R12W1H4FB11BOMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for DF75R12W1H4FB11BOMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF75R12W1H4FB11BOMA1 reliable?
The price and inventory of DF75R12W1H4FB11BOMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF75R12W1H4FB11BOMA1 is usually 5 days.
3.What payment methods are accepted for DF75R12W1H4FB11BOMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF75R12W1H4FB11BOMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF75R12W1H4FB11BOMA1?
DF75R12W1H4FB11BOMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF75R12W1H4FB11BOMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF75R12W1H4FB11BOMA1?
For technical support, including DF75R12W1H4FB11BOMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF75R12W1H4FB11BOMA1 requirements.
6.How does Aetrix verify that DF75R12W1H4FB11BOMA1 is sourced from the original manufacturer or authorized distributors?
All DF75R12W1H4FB11BOMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF75R12W1H4FB11BOMA1 meets industry standards.
7.What is the process for return or replacement of DF75R12W1H4FB11BOMA1?
All DF75R12W1H4FB11BOMA1 units undergo pre-shipment inspection (PSI). If there is an issue with DF75R12W1H4FB11BOMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF75R12W1H4FB11BOMA1 part is unused and in its original packaging.
Return procedure for DF75R12W1H4FB11BOMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF75R12W1H4FB11BOMA1 Tags
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