Infineon Technologies DF80R12W2H3FB11BOMA1

Overview

DF80R12W2H3FB11BOMA1 from Infineon Technologies is a 1200 V, 80 A dual-channel IGBT module with integrated SiC Schottky bypass diode and NTC temperature sensor, designed for high-efficiency solar inverters and industrial motor drives. It features H3-speed IGBTs, low switching losses (Eon = 0.32 mJ, Eoff = 1.20 mJ at 20 A/600 V), 0.55 K/W IGBT junction-to-case thermal resistance, and PressFIT contact technology.

For engineers reviewing the DF80R12W2H3FB11BOMA1 datasheet, DF80R12W2H3FB11BOMA1 pinout, DF80R12W2H3FB11BOMA1 application, or DF80R12W2H3FB11BOMA1 equivalent, key selection criteria include VCES = 1200 V, IC nom = 80 A, RthJC(IGBT) = 0.55–0.65 K/W, integrated thinQ H SiC diode (VRRM = 1200 V, VF = 0.95 V @ 30 A), and NTC thermistor (R25 = 5.00 kΩ, B25/100 = 3433 K).

Technical Context

This module integrates two discrete power stages in a single 62 mm footprint: an IGBT chopper (VCES = 1200 V, IC nom = 80 A, VCE(sat) = 1.70 V @ 20 A/15 V/125°C) and a parallel-connected SiC Schottky diode (VRRM = 1200 V, IF RMS = 50 A per chip, VF = 0.95 V @ 30 A/150°C). The H3 IGBT die uses field-stop trench technology optimized for soft switching and low tail current.

Thermal management is enabled by Al₂O₃ substrate (RthJC = 0.55 K/W for IGBT, 1.05 K/W for diode), case-to-heatsink interface (RthCH = 0.55 K/W IGBT, 0.80 K/W diode), and integrated NTC (R25 = 5.00 kΩ, ±5% tolerance at 100°C). Isolation meets 2.5 kV RMS (50 Hz, 1 min) with CTI > 200 and creepage ≥ 11.5 mm terminal-to-heatsink.

Key Specifications

Pinout & Package

DF80R12W2H3FB11BOMA1 uses a 62 mm industrial-standard package with PressFIT terminals and isolated baseplate. Dimensions: 62 mm × 108 mm × 17 mm. Mounting requires 40–80 N clamp force per terminal. Isolation: 2.5 kV RMS, creepage ≥11.5 mm (terminal-to-heatsink).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT module applications.

Compared with FZ800R12KE4 and FF800R12ME7_B11, DF80R12W2H3FB11BOMA1 offers optimal balance of 62 mm form factor, integrated SiC diode, NTC, and PressFIT for solar and industrial UPS-delivering 12% lower system-level thermal resistance and eliminating external diode bill-of-material.

Availability

DF80R12W2H3FB11BOMA1 is available at Aetrix Electronics and suitable for solar string inverters, industrial motor drives, bi-directional energy storage converters, and online UPS systems requiring stable component supply across multi-year production cycles.

Supply support for DF80R12W2H3FB11BOMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive MCUs, and security ICs, with global manufacturing and R&D centers.

This module belongs to Infineon's PrimePACK™ 2 family, engineered for high-power industrial and renewable energy systems demanding high reliability, low thermal resistance, and integrated sensing.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The DF80R12W2H3FB11BOMA1 supports continuous operation up to Tvj = 150°C, with short-circuit withstand capability (tP ≤ 10 µs) at this temperature. Derating curves in the datasheet specify IC derating above 125°C ambient, and the integrated NTC enables real-time monitoring to enforce this limit dynamically.

Does this module require external gate resistors, and what values are recommended?

Yes-external gate resistors are mandatory for safe switching. Infineon recommends RGon = 12 Ω and RGoff = 12 Ω for balanced turn-on/turn-off behavior at 20 A/600 V. These values yield td(on) = 0.025 µs and td(off) = 0.32 µs at 125°C, minimizing cross-conduction loss while maintaining EMI compliance.

How is thermal performance affected by the PressFIT mounting method?

PressFIT eliminates solder voids and interfacial delamination, reducing effective RthCH by up to 15% versus soldered modules. With specified 40–80 N clamp force per terminal and λgrease = 1 W/(m·K), the module achieves RthCH = 0.55 K/W (IGBT) and 0.80 K/W (diode) as measured under standardized test conditions.

Can the integrated NTC be used for overtemperature protection without additional circuitry?

No-the NTC requires external biasing (e.g., voltage divider with precision reference) and ADC sampling. Its R25 = 5.00 kΩ and B25/100 = 3433 K match industry-standard thermistor interface ICs like the Texas Instruments TMP235 or Analog Devices AD7124, but no internal protection logic is embedded.