Diodes Incorporated DFLS160-7

Overview

DFLS160-7 from Diodes Incorporated is a 1.0A surface-mount Schottky barrier rectifier in PowerDI123 package, rated for 60V peak repetitive reverse voltage and 50A non-repetitive surge current, with typical forward voltage of 0.50V at 1.0A, used in DC-DC converter output rectification and low-voltage power supplies.

For engineers reviewing the DFLS160-7 datasheet, DFLS160-7 pinout, DFLS160-7 application, or DFLS160-7 equivalent, key selection criteria include forward voltage drop at rated current, thermal resistance junction-to-solder point (6°C/W), reverse leakage (<0.1mA at 60V), total capacitance (67pF at 10V), and surge current capability under 8.3ms half-sine waveform.

Technical Context

This Schottky rectifier employs guard ring die construction to enhance transient protection and withstand repetitive voltage spikes in switching power supplies. Its patented interlocking clip design enables high surge current handling without bond wire failure.

The device operates across –65°C to +150°C and features low thermal resistance (R_θJS = 6°C/W) due to direct die-to-cathode tab thermal path, supporting high-power-density layouts on compact PCBs with minimal copper area.

Key Specifications

Pinout & Package

Package: PowerDI123 - surface-mount plastic package with exposed cathode tab for thermal and electrical connection; dimensions: 3.70mm × 1.78mm × 1.00mm (L × W × H); weight ≈ 0.01g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with SS16-E3/5AT and SB160, DFLS160-7 delivers superior thermal performance (6°C/W R_θJS vs. >130°C/W), lower conduction loss (0.50V vs. ≥0.72V), and enhanced surge robustness via guard ring-making it optimal for space-constrained, high-reliability power conversion.

Availability

DFLS160-7 is available at Aetrix Electronics and suitable for USB-C power adapters, industrial DC-DC converters, automotive body control modules, and IoT edge node power supplies requiring stable component supply and long-term manufacturability.

Supply support for DFLS160-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DFLS series targets high-efficiency, surface-mount Schottky rectification in space-constrained power supplies, emphasizing low V_F, robust surge handling, and green packaging for industrial and automotive-tier applications.

FAQ

What is the maximum junction temperature and how does it affect derating?

The DFLS160-7 has an operating junction temperature range of –65°C to +150°C. At ambient temperatures above +75°C, average forward current must be linearly derated from 1.0A to zero at +150°C, per Figure 4 in DS30548. This ensures safe operation under sustained thermal stress in enclosed power modules.

Is DFLS160-7 suitable for automotive applications?

The standard DFLS160-7 is not AEC-Q200 qualified. However, Diodes offers the automotive-compliant DFLS160Q variant (separate datasheet DS30549), which undergoes additional qualification testing including temperature cycling, humidity bias, and board-level vibration per AEC standards.

How does the PowerDI123 package improve thermal performance over SMA?

The PowerDI123 exposes the cathode as a large metal tab directly bonded to the die's backside, achieving R_θJS = 6°C/W-over 2× better than SMA-packaged equivalents (typically >15°C/W). This enables higher current density without thermal throttling in compact PCB layouts.

What is the significance of the "guard ring die construction" mentioned in the features?

Guard ring die construction adds a doped region surrounding the active junction to suppress edge electric field crowding. This prevents premature avalanche breakdown during voltage transients, increasing reliability in switching power supplies subject to ringing or load dump events.