Diodes Incorporated DGD0506AFN-7

Overview

DGD0506AFN-7 from Diodes Incorporated is a high-frequency half-bridge gate driver IC designed to drive two N-channel MOSFETs in synchronous buck, motor control, and Class D amplifier topologies. It features 1.5A source/2.0A sink output current, programmable deadtime (40–560 ns), and 50V floating high-side capability. Operates from -40°C to +125°C with integrated bootstrap diode and dual UVLO protection.

For engineers reviewing the DGD0506AFN-7 datasheet, DGD0506AFN-7 pinout, DGD0506AFN-7 application, or DGD0506AFN-7 equivalent, key selection criteria include deadtime adjustability, matched propagation delays (≤50 ns skew), ultra-low standby current (<1 µA), and W-DFN3030-10 thermal performance (RθJA = 64 °C/W).

Technical Context

The DGD0506AFN-7 implements independent high-side and low-side drivers with cross-conduction prevention logic and programmable deadtime via external resistor (RDT). Its floating high-side stage supports VS offset up to 50V with dVS/dt immunity of 50 V/ns.

Logic inputs (IN, EN) accept 3.3V–5V TTL/CMOS levels with input hysteresis (0.6 V), while dual UVLO thresholds (VCCUV± = 5.6–8.0 V, VBSUV± = 5.6–8.0 V) ensure safe turn-off during supply droop. Propagation delays are tightly matched (tDM ≤ 50 ns) to support >1 MHz switching.

Key Specifications

Pinout & Package

Supplied in W-DFN3030-10 (Type TH) package: 3.0 mm × 3.0 mm, 0.75 mm height, exposed thermal pad connected to COM. RoHS-compliant, halogen-free, matte tin-plated terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IRS2004PBF and LM5109BMAX, DGD0506AFN-7 uniquely combines programmable deadtime, integrated bootstrap diode, and sub-1 µA shutdown current in a thermally efficient 3×3 mm DFN - making it optimal for compact, battery-sensitive, and thermally constrained half-bridge designs.

Availability

DGD0506AFN-7 is available at Aetrix Electronics and suitable for DC-DC converters, motor control systems, and battery-powered hand tools requiring stable component supply and long-term manufacturability.

Supply support for DGD0506AFN-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The DGD series targets high-efficiency, high-frequency power conversion with emphasis on integration, thermal performance, and robustness in portable and industrial power stages.

FAQ

What is the purpose of the DT pin on the DGD0506AFN-7?

The DT pin sets both LO→HO and HO→LO deadtime intervals using a single external resistor to ground. With RDT = 10 kΩ, deadtime is 40–100 ns; with RDT = 100 kΩ, it increases to 300–560 ns. This prevents simultaneous conduction of high-side and low-side MOSFETs under varying load and temperature conditions.

Can the DGD0506AFN-7 drive 100 V bus applications?

No. The DGD0506AFN-7 has a maximum VB rating of +60 V and VS offset limit of +50 V. For 100 V bus systems, consider alternatives like LM5109BMAX (VB = 100 V) or IRS21844 (VB = 600 V), which provide higher floating supply tolerance and appropriate isolation margins.

Is the W-DFN3030-10 package thermally adequate for 1 A continuous output current?

Yes. At 1 A peak gate drive with 50% duty cycle and 500 kHz switching, power dissipation remains below 300 mW. With RθJA = 64 °C/W and +85°C ambient, junction temperature stays below +105°C - well within the +150°C absolute max rating and compatible with standard 2-layer FR-4 PCBs.

Does the DGD0506AFN-7 require external bootstrap components?

Only a bootstrap capacitor is required; the internal bootstrap diode (VF ≈ 0.67 V @ 100 µA) eliminates the need for an external diode. A typical 100 nF X7R ceramic capacitor placed close to VB and VS pins ensures reliable high-side supply replenishment during continuous PWM operation.