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Diodes Incorporated DGD0506FN-7

Part No.:
DGD0506FN-7
Manufacturer:
Diodes Incorporated
Category:
Gate Drivers
Package:
10-WFDFN Exposed Pad
Datasheet:
AetrixDGD0506FN-7.pdf
Description:
IC GATE DRV HALF-BRDG DFN3030-10
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,184

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Product details

Overview

DGD0506FN-7 from Diodes Incorporated is a high-frequency half-bridge gate driver IC designed to drive two N-channel MOSFETs in synchronous buck, motor control, and Class-D amplifier topologies. It features 50V floating high-side capability, 1.25A source / 2.0A sink output current, programmable deadtime (40–560 ns), and operates across –40°C to +125°C. Its integrated bootstrap Schottky diode and TTL/CMOS-compatible 3.3V logic inputs enable direct MCU interfacing in compact DC-DC converters.

For engineers reviewing the DGD0506FN-7 datasheet, DGD0506FN-7 pinout, DGD0506FN-7 application, or DGD0506FN-7 equivalent, key selection criteria include deadtime configurability via external resistor, matched HO/LO propagation delays (<50 ns skew), UVLO thresholds (6.6 V typical), ultra-low standby current (<1 µA), and V-DFN3030-10 thermal performance (RθJA = 64 °C/W).

Technical Context

The DGD0506FN-7 implements independent high-side and low-side drivers with cross-conduction prevention logic that enforces non-overlapping HO and LO outputs. Its programmable deadtime is set by an external resistor on the DT pin, enabling precise timing control across 40–560 ns range depending on RDT value (10 kΩ or 100 kΩ).

It integrates a bootstrap Schottky diode rated for 400 mA pulsed current and supports floating high-side operation up to 50 V with dVS/dt immunity of 50 V/ns. UVLO protection is implemented separately for VCC and VB, with hysteresis (±0.3 V) and thresholds centered at 6.9 V.

Key Specifications

Parameter Value and Actual Design Meaning
Output Drive Strength 1.25 A source / 2.0 A sink - sufficient to rapidly charge/discharge gate capacitance of medium-power MOSFETs in <500 kHz switching applications
Programmable Deadtime Range 40–560 ns - configurable via single external resistor to prevent shoot-through in varied load and layout conditions
Propagation Delay Matching <50 ns max skew between HO and LO - enables precise timing alignment critical for high-efficiency half-bridge operation
UVLO Thresholds VCCUV+/VBUV+ = 6.9 V ±0.3 V - ensures MOSFET gate drive remains disabled until stable supply is established
Quiescent Supply Current <1 µA in shutdown - minimizes system standby power loss in battery-powered tools and eCig devices
Operating Temperature –40°C to +125°C - supports industrial and automotive-adjacent environments without derating
Package Thermal Resistance RθJA = 64 °C/W - enables >400 mW continuous dissipation on standard 2-layer FR-4 PCB

Pinout & Package

Supplied in the V-DFN3030-10 (Standard) package: 3.0 mm × 3.0 mm × 0.8 mm body with exposed thermal pad, matte tin terminals, and JEDEC-compliant moisture sensitivity level 3.

Pin/Terminal Circuit Role Design Meaning
1 VCC Low-side and logic supply input Provides power for internal logic and low-side driver; must be decoupled near pin with ≥1 µF ceramic capacitor
2 VB High-side floating supply input Connects to bootstrap capacitor positive terminal; rated up to +50 V relative to VS
3 HO High-side gate drive output Drives gate of high-side N-MOSFET; requires series gate resistor to damp ringing and limit peak current
4 VS High-side floating supply return Reference node for high-side driver; connects to source of high-side MOSFET and bootstrap capacitor negative terminal
5 NC No connect Internally unconnected; must remain floating or tied to COM per layout guidelines to avoid parasitic coupling
6 DT Deadtime configuration input Accepts external resistor to ground to set HO/LO non-overlap interval; 10 kΩ → 70 ns, 100 kΩ → 430 ns typical
7 EN Enable logic input Active-high; drives both HO and LO low when logic low; compatible with 3.3 V MCU GPIO
8 IN Phase control input In-phase with HO output; inverted internally to generate LO signal; TTL/CMOS compatible down to 3.3 V
9 COM Low-side and logic ground return Common reference for VCC, EN, IN, and LO; must be low-inductance connection to PCB ground plane
10 LO Low-side gate drive output Drives gate of low-side N-MOSFET; complements HO with programmable deadtime; sinks up to 2.0 A
Pad Thermal substrate connection Must be soldered to large copper pour tied to COM for thermal and EMI performance; not electrically isolated

Key Features

Feature Design Value
Integrated bootstrap Schottky diode Eliminates need for external diode; rated 400 mA pulsed, VF ≤ 0.8 V @ 100 mA - reduces BOM count and layout area
Independent UVLO on VCC and VB Prevents partial drive during brown-out; triggers at 6.6 V falling threshold with 0.3 V hysteresis - avoids MOSFET linear-mode stress
Logic-level compatibility IN and EN accept 3.3 V logic directly - enables seamless interface with modern low-voltage MCUs without level-shifting circuitry
Ultra-low shutdown current <1 µA ICCSD - extends battery life in portable tools and eCig devices during idle periods
Matched propagation delays tON(HO) and tON(LO) differ by ≤50 ns - ensures tight timing control essential for high-frequency ZVS/ZCS topologies

Applications

DC-DC Converters Motor Controls

Use Scenario: Synchronous buck converter in point-of-load (POL) regulator for FPGA or ASIC core voltage.

IC Role / Device Role / Timing Role: Half-bridge gate driver controlling high- and low-side N-MOSFETs; provides programmable deadtime to prevent shoot-through during 300–500 kHz switching.

Use Value: Matched 96 ns typical propagation delays and <50 ns skew ensure minimal duty-cycle distortion and high light-load efficiency.

Use Scenario: 24 V brushed DC motor driver in cordless power tools with PWM speed control.

IC Role / Device Role / Timing Role: Gate driver for half-bridge power stage; EN pin enables rapid system-level disable during stall or overcurrent events.

Use Value: 2.0 A sink capability allows fast turn-off of high-gate-charge MOSFETs, reducing conduction losses during dynamic braking.

Battery-Powered Hand Tools eCig Devices

Use Scenario: Compact 18–20 V Li-ion powered drill/driver with integrated electronic commutation.

IC Role / Device Role / Timing Role: High-frequency gate driver supporting >200 kHz PWM for smooth torque response and reduced audible noise.

Use Value: –40°C to +125°C operating range and <1 µA shutdown current extend runtime and reliability in variable ambient conditions.

Use Scenario: Lithium-polymer powered electronic cigarette with regulated heating coil current control.

IC Role / Device Role / Timing Role: Low-quiescent-current gate driver enabling precise pulse-width modulated power delivery to NiCr/SS316L coils.

Use Value: Integrated bootstrap diode and 3.3 V logic compatibility reduce component count and PCB footprint in space-constrained handheld form factors.

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
DGD0506A Direct replacement with updated process; identical pinout, improved ESD rating (HBM 4 kV), tighter deadtime tolerance (±10% vs ±15%) Same functional scope but qualified for higher-reliability industrial use; recommended for new designs Select DGD0506A for production continuity and enhanced robustness; DGD0506FN-7 remains viable for legacy repair or inventory burn-down.
IRS2005STRPBF Higher voltage rating (600 V high-side), no integrated bootstrap diode, fixed 500 ns deadtime, SOIC-14 package Targeted at line-powered PFC and inverter stages; requires external bootstrap diode and larger board area Choose IRS2005STRPBF only when >100 V bus operation or higher isolation is required; not drop-in due to package and feature mismatch.

Compared with DGD0506FN-7, the DGD0506A offers identical functionality with improved manufacturing consistency and ESD resilience, while the IRS2005STRPBF trades integration and size for higher voltage capability-making it unsuitable for low-voltage portable applications where DGD0506FN-7 excels.

Availability

DGD0506FN-7 is available at Aetrix Electronics and suitable for DC-DC converters, motor controls, and battery-powered hand tools requiring stable component supply and long-term obsolescence management support.

Supply support for DGD0506FN-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in power management, signal integrity, and connectivity solutions for industrial, computing, and consumer markets.

The DGD0506 belongs to Diodes' high-frequency gate driver product line, engineered for compact, efficient half-bridge power stages in portable and thermally constrained applications - emphasizing integration, low quiescent current, and robust protection features.

FAQ

Is DGD0506FN-7 still in active production?

No - Diodes Incorporated has officially discontinued DGD0506FN-7 and designated it obsolete. The DGD0506A is the approved replacement with identical pinout, improved ESD rating (HBM 4 kV), and tighter deadtime tolerance. Aetrix Electronics maintains limited legacy stock for repair and legacy design support but recommends transitioning to DGD0506A for new designs.

What is the maximum allowable dV/dt on the VS pin?

The DGD0506FN-7 specifies a maximum transient dVS/dt rating of 50 V/ns on the VS pin. Exceeding this may cause false triggering of the high-side driver due to capacitive coupling into the level-shifter circuit. Layout best practices include minimizing loop area between VS, HO, and the high-side MOSFET source, and using local ceramic decoupling between VB and VS.

Can the internal bootstrap diode handle continuous 400 mA current?

No - the 400 mA rating is for pulsed operation (≤10 µs duration). Under steady-state conditions, the internal diode carries only gate-charge replenishment current, typically <10 mA. For applications with high-frequency, high-duty-cycle switching or large gate charges, external current limiting (e.g., pre-bias resistor or external Schottky + series resistor) is required to keep internal diode stress within safe limits.

How does the DT pin affect deadtime asymmetry between HO→LO and LO→HO transitions?

The DT pin sets a single resistor-defined time constant that applies symmetrically to both HO-to-LO and LO-to-HO deadtime intervals. Typical datasheet values show matched tDT (HO-LO) and tDT (LO-HO) within ±50 ns, confirming balanced transition timing. This symmetry eliminates need for separate high/low deadtime tuning in most half-bridge implementations.

DGD0506FN-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
10-WFDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Driven Configuration:
Half-Bridge
Channel Type:
Synchronous
Number of Drivers:
2
Gate Type:
N-Channel MOSFET
Voltage - Supply:
8V ~ 14V
Logic Voltage - VIL, VIH:
1V, 2.5V
Current - Peak Output (Source, Sink):
1.5A, 2.5A
Input Type:
Non-Inverting
High Side Voltage - Max (Bootstrap):
50 V
Rise / Fall Time (Typ):
17ns, 12ns
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
W-DFN3030-10 (Type TH)

DGD0506FN-7 FAQ

1.How can I place an order for DGD0506FN-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DGD0506FN-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DGD0506FN-7 reliable?

The price and inventory of DGD0506FN-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DGD0506FN-7 is usually 5 days.

3.What payment methods are accepted for DGD0506FN-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DGD0506FN-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DGD0506FN-7?

DGD0506FN-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DGD0506FN-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DGD0506FN-7?

For technical support, including DGD0506FN-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DGD0506FN-7 requirements.

6.How does Aetrix verify that DGD0506FN-7 is sourced from the original manufacturer or authorized distributors?

All DGD0506FN-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DGD0506FN-7 meets industry standards.

7.What is the process for return or replacement of DGD0506FN-7?

All DGD0506FN-7 units undergo pre-shipment inspection (PSI). If there is an issue with DGD0506FN-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DGD0506FN-7 part is unused and in its original packaging.

Return procedure for DGD0506FN-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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