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Diodes Incorporated DGD05473FN-7

Part No.:
DGD05473FN-7
Manufacturer:
Diodes Incorporated
Category:
Gate Drivers
Package:
10-WFDFN Exposed Pad
Datasheet:
AetrixDGD05473FN-7.pdf
Description:
IC GATE DRV HALF-BRDG DFN3030-10
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:12,651

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Product details

Overview

DGD05473FN-7 from Diodes Incorporated is a high-frequency dual-channel gate driver IC for half-bridge N-MOSFET configurations, featuring independent high-side (50V floating) and low-side drivers, 1.5A source / 2.5A sink output capability, 20ns typical propagation delay, and integrated bootstrap diode. It enables compact DC-DC converters and Class-D amplifiers operating from -40°C to +125°C.

For engineers reviewing the DGD05473FN-7 datasheet, DGD05473FN-7 pinout, DGD05473FN-7 application, or DGD05473FN-7 equivalent, key selection criteria include high-side UVLO threshold (3.8V typ), delay matching ≤5ns, TTL/CMOS-compatible 3.3V logic inputs (HIN/LIN/EN), and V-DFN3030-10 thermal performance (RθJA = 64°C/W).

Technical Context

The DGD05473FN-7 implements independent high-side and low-side driver channels with cross-conduction prevention logic that enforces dead-time between HO and LO outputs. Its floating high-side stage supports VS offset up to 50V with dVS/dt immunity of 50V/ns.

It integrates a bootstrap diode (VF = 0.67V @ 100µA) and provides separate undervoltage lockout for VB (3.8V typ) and VCC (3.8V typ), ensuring MOSFET protection during supply brownout. Propagation delays are matched within 5ns (max), enabling >500kHz switching in half-bridge topologies.

Key Specifications

Parameter Value and Actual Design Meaning
Output Current 1.5A source / 2.5A sink per channel - drives gate capacitance of medium-power MOSFETs without external buffers
Propagation Delay 20ns (typ) turn-on - supports high-frequency operation up to 1MHz in resonant converters
Delay Matching ≤5ns max between HO/LO - minimizes shoot-through risk in hard-switched half-bridges
UVLO Thresholds VCCUV+ = 3.8V, VBSUV+ = 3.8V - prevents partial turn-on during supply ramp-up or dropout
Logic Compatibility 3.3V-tolerant HIN/LIN/EN inputs - interfaces directly with modern MCUs and DSPs without level-shifting
Quiescent Current <1µA shutdown, 130µA operating - enables ultra-low-power standby in battery-powered tools
Operating Temp -40°C to +125°C - qualified for industrial motor control and automotive-adjacent eCig applications

Pinout & Package

Supplied in the V-DFN3030-10 (3.0mm × 3.0mm, 0.8mm height) thermally enhanced lead-free package with exposed thermal pad connected to COM. Molded plastic body meets UL 94V-0 and J-STD-020 Level 3 moisture sensitivity.

Pin/Terminal Circuit Role Design Meaning
1 VCC Low-side and logic supply input Provides power for internal logic and low-side driver; must be ≥4.5V for internal bootstrap diode operation
2 NC No internal connection Unused pin; must remain unconnected and un-bonded on PCB
3 VB High-side floating supply Bias rail for high-side driver; rated up to +60V absolute max, operates at VS + 4.2V to VS + 14V
4 HO High-side gate drive output Drives N-MOSFET gate referenced to VS; capable of 1.5A source / 2.5A sink into capacitive load
5 VS High-side floating return Source node of high-side MOSFET; serves as reference for HO output and VB regulation
6 EN Enable logic input Active-high enable; logic low forces both HO and LO low, disabling half-bridge conduction
7 HIN High-side input control In-phase with HO output; accepts 0–5V logic; includes 0.6V hysteresis for noise immunity
8 LIN Low-side input control In-phase with LO output; synchronous with HIN but independently controlled for PWM or phase-shifted operation
9 COM Low-side and logic ground Common return for VCC, EN, HIN, LIN, and LO; must be tied to PCB ground plane and thermal pad
10 LO Low-side gate drive output Drives N-MOSFET gate referenced to COM; matches HO timing with ≤5ns delay skew

Key Features

Feature Design Value
Integrated bootstrap diode Eliminates external Schottky diode in most designs (VF = 0.67V @ 100µA), reducing BOM count and layout area
Cross-conduction prevention Hardware-enforced dead-time logic ensures HO and LO never simultaneously assert, preventing shoot-through failure
Matched propagation delays ≤5ns max difference between HO and LO turn-on delays - critical for ZVS/ZCS soft-switching topologies
Ultra-low standby current <1µA ICCSD in shutdown - extends battery life in portable hand tools and eCig devices
Extended temperature range -40°C to +125°C operation - supports under-hood motor control and industrial power supplies without derating

Applications

DC-DC Converters Motor Control

Use Scenario: Synchronous buck converter in telecom power supply delivering 12V@20A with 500kHz switching.

IC Role / Device Role / Timing Role: Half-bridge gate driver controlling high-side and low-side N-MOSFETs; precisely timed HO/LO edges minimize conduction loss and EMI.

Use Value: 20ns propagation delay and ≤5ns delay matching reduce dead-time overhead by 30% vs. legacy drivers, improving efficiency at high frequency.

Use Scenario: 24V cordless drill with brushed DC motor and PWM speed control.

IC Role / Device Role / Timing Role: High-frequency gate driver enabling 20kHz+ PWM to eliminate audible motor whine while maintaining torque response.

Use Value: 1.5A/2.5A drive strength ensures fast MOSFET turn-on even with gate charge >50nC, reducing I²R losses during commutation.

eCig Devices Class-D Power Amplifiers

Use Scenario: Compact vaping mod requiring rapid battery voltage monitoring and coil activation within 10ms.

IC Role / Device Role / Timing Role: Enables fast-switching half-bridge driving ceramic heating element; EN pin allows microsecond-level power gating.

Use Value: <1µA shutdown current extends shelf life of pre-filled disposable units; 3.3V logic compatibility simplifies MCU interface.

Use Scenario: 100W audio amplifier using half-bridge output stage with feedback-controlled PWM.

IC Role / Device Role / Timing Role: Gate driver delivering precise, low-jitter HO/LO signals to minimize THD+N in high-fidelity audio band.

Use Value: 50V high-side rating supports rail voltages up to ±40V; matched delays suppress even-order harmonics in differential output stage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRS2004SPBF Higher 2.5A/2.5A symmetric drive, no integrated bootstrap diode, SOIC-8 package Requires external bootstrap diode and larger PCB footprint; better suited for high-current industrial inverters Select when higher sink current symmetry is required and board space permits discrete bootstrap implementation
LM5113MMX/NOPB 1.5A/1.5A drive, 10ns propagation delay, no internal bootstrap diode, 10-pin WSON Lacks integrated bootstrap diode and has lower sink current; optimized for ultra-high-speed GaN FETs Select for GaN-based 1MHz+ designs where external bootstrap and faster timing outweigh integration benefits

Compared with IRS2004SPBF and LM5113MMX/NOPB, the DGD05473FN-7 uniquely combines integrated bootstrap diode, asymmetric 1.5A/2.5A drive, and 5ns delay matching in a 3×3mm DFN-making it optimal for space-constrained, cost-sensitive half-bridge applications like eCig and portable tools.

Availability

DGD05473FN-7 is available at Aetrix Electronics and suitable for DC-DC converters, motor control systems, and battery-powered hand tools requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DGD05473FN-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in power management, signal integrity, and connectivity solutions for industrial, computing, and consumer markets.

The DGD05473 belongs to Diodes' high-frequency gate driver product line, engineered specifically for compact, efficient half-bridge power stages in battery-operated and thermally constrained applications.

FAQ

What is the maximum allowable dVS/dt for the DGD05473FN-7 high-side driver?

The DGD05473FN-7 supports a high-side offset supply transient rate of up to 50V/ns, verified per datasheet Absolute Maximum Ratings. This ensures reliable operation in fast-switching half-bridge circuits with steep voltage transitions across the VS node, such as LLC resonant converters and Class-D amplifiers.

Can the internal bootstrap diode replace an external Schottky diode in all operating conditions?

The internal bootstrap diode suffices when VCC ≥ 4.9V; for VCC = 4.5–4.9V, Diodes specifies an external Schottky diode (0.3V VF, 1A) is required per Figure 4 of DS40389 Rev. 6–3. Below 4.5V, the device is not characterized for reliable bootstrap operation.

Does the DGD05473FN-7 support independent control of high-side and low-side outputs?

Yes - HIN and LIN are fully independent logic inputs, allowing asynchronous or phase-shifted PWM control of HO and LO. The cross-conduction prevention logic only blocks simultaneous high states; it does not enforce synchronous operation or fixed dead time.

Is the DGD05473FN-7 recommended for new designs?

No - the datasheet explicitly states "THE DGD05473 IS NOT RECOMMENDED FOR NEW DESIGNS. PLEASE CONTACT US." Engineers should consult Diodes Incorporated for migration paths to newer gate drivers such as the DGD05475 or AP2204 series before initiating new product development.

DGD05473FN-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
10-WFDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Driven Configuration:
Half-Bridge
Channel Type:
Independent
Number of Drivers:
2
Gate Type:
N-Channel MOSFET
Voltage - Supply:
0.3V ~ 60V
Logic Voltage - VIL, VIH:
0.8V, 2.4V
Current - Peak Output (Source, Sink):
1.5A, 2.5A
Input Type:
CMOS/TTL
High Side Voltage - Max (Bootstrap):
50 V
Rise / Fall Time (Typ):
16ns, 12ns
Operating Temperature:
-40°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
W-DFN3030-10

DGD05473FN-7 FAQ

1.How can I place an order for DGD05473FN-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DGD05473FN-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DGD05473FN-7 reliable?

The price and inventory of DGD05473FN-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DGD05473FN-7 is usually 5 days.

3.What payment methods are accepted for DGD05473FN-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DGD05473FN-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DGD05473FN-7?

DGD05473FN-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DGD05473FN-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DGD05473FN-7?

For technical support, including DGD05473FN-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DGD05473FN-7 requirements.

6.How does Aetrix verify that DGD05473FN-7 is sourced from the original manufacturer or authorized distributors?

All DGD05473FN-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DGD05473FN-7 meets industry standards.

7.What is the process for return or replacement of DGD05473FN-7?

All DGD05473FN-7 units undergo pre-shipment inspection (PSI). If there is an issue with DGD05473FN-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DGD05473FN-7 part is unused and in its original packaging.

Return procedure for DGD05473FN-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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