Diodes Incorporated DGD05791UFN-7
- Part No.:
- DGD05791UFN-7
- Manufacturer:
- Diodes Incorporated
- Category:
- Gate Drivers
- Package:
- 10-UFDFN Exposed Pad
- Datasheet:
-
DGD05791UFN-7.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 10UFDFN
- Quantity:
- Payment:

- Shipping:

Inventory:1,322
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Product details
Overview
DGD05791UFN-7 from Diodes Incorporated is a high-frequency dual-channel gate driver IC for N-channel MOSFET half-bridge topologies, featuring 100V floating high-side capability, 1.5A source / 2.5A sink output current, 60ns typical propagation delay, and operation from -40°C to +125°C in U-DFN3030-10. It enables compact DC-DC converters and Class-D amplifiers by supporting fast switching with matched timing.
For engineers reviewing the DGD05791UFN-7 datasheet, DGD05791UFN-7 pinout, DGD05791UFN-7 application, or DGD05791UFN-7 equivalent, key selection criteria include bootstrap-compatible 100V high-side drive, TTL/CMOS logic compatibility down to 3.3V, independent UVLO on both sides, cross-conduction prevention, and <10ns delay matching for high-frequency synchronous rectification.
Technical Context
The DGD05791UFN-7 integrates independent high-side and low-side drivers with dedicated bootstrap supply (VB/VS) and fixed logic supply (VCC/COM) rails. Its logic inputs (HIN, LIN, EN) accept 3.3V–5V CMOS/TTL levels and feature input hysteresis (0.7V) for noise immunity.
UVLO thresholds are separately set for VCC (4.0–6.7V turn-on) and VB (3.8–5.8V turn-on), ensuring MOSFET protection during supply brownout. Propagation delays (tON = 65ns, tOFF = 58ns) and delay matching (≤10ns) are specified at CL = 1nF and VS = 100V, enabling reliable >1MHz switching in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| High-Side Voltage Rating | 100V max floating supply (VB–VS), supports bootstrap operation up to 100V rail in half-bridge. |
| Output Drive Strength | 1.5A source / 2.5A sink per channel - sufficient to rapidly charge/discharge 1nF gate capacitance in <20ns. |
| Propagation Delay | 60ns typical (tON/tOFF) - enables stable PWM control at ≥1MHz with margin for dead-time insertion. |
| Delay Matching | ≤10ns max mismatch between HO and LO - critical for minimizing shoot-through risk in synchronous rectifiers. |
| Logic Input Compatibility | 3.3V–5V TTL/CMOS - directly interfaces with STM32, PIC, and ESP32 GPIO without level-shifting. |
| Operating Temperature | -40°C to +125°C ambient - qualified for industrial motor drives and battery-powered power tools. |
| Quiescent Current | <1µA shutdown ICCSD - preserves battery life in always-on enable architectures. |
Pinout & Package
Package: U-DFN3030-10 (3.0mm × 3.0mm × 0.6mm, 10-terminal, exposed thermal pad). Molded green compound, matte tin terminals, JEDEC Level 3 moisture sensitivity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 VCC | Low-side and logic supply input | Provides power for internal logic and low-side driver; must be decoupled near pin. |
| 2 NC | No internal connection | Unbonded die pad; must remain unconnected and un-soldered on PCB. |
| 3 VB | High-side floating supply | Bootstrap capacitor positive terminal; rated up to +120V absolute max. |
| 4 HO | High-side gate drive output | Drives N-MOSFET gate referenced to VS; capable of 1.5A source / 2.5A sink. |
| 5 VS | High-side floating return | Source node of high-side MOSFET; serves as reference for HO and VB. |
| 6 EN | Enable logic input | Active-high enable; logic low disables both HO and LO outputs simultaneously. |
| 7 HIN | High-side input signal | In-phase control input for HO; accepts 3.3V–5V logic with 0.7V hysteresis. |
| 8 LIN | Low-side input signal | In-phase control input for LO; independent of HIN for asymmetric PWM control. |
| 9 COM | Low-side and logic ground | Common return for VCC, LO, and logic circuitry; must connect to PCB ground plane. |
| 10 LO | Low-side gate drive output | Drives N-MOSFET gate referenced to COM; matches HO timing within 10ns. |
Key Features
| Feature | Design Value |
|---|---|
| Cross-conduction prevention logic | Hardware-enforced dead-time insertion prevents simultaneous HO/LO activation, eliminating shoot-through risk without external timing circuits. |
| Independent high-side and low-side UVLO | Separate undervoltage lockout on VB and VCC ensures safe disable when either supply drops below operational threshold. |
| Ultra-low standby current | <1µA shutdown current enables energy-sensitive applications like cordless tool sleep modes. |
| Matched propagation delays | ≤10ns HO/LO delay mismatch allows precise dead-time tuning at >1MHz switching frequencies. |
| 3.3V logic interface | HIN/LIN/EN accept 3.3V logic directly - eliminates level shifters in modern MCU-based power designs. |
Applications
| DC-DC Converters | Motor Controls |
|---|---|
Use Scenario: Synchronous buck converter in 48V server PSU delivering 12V/100A output. IC Role / Device Role / Timing Role: Half-bridge gate driver controlling high-side and low-side N-MOSFETs with 500kHz–1MHz PWM. Use Value: 60ns propagation delay and ≤10ns matching reduce dead-time overhead, improving efficiency by ~0.8% at full load. | Use Scenario: 3-phase BLDC inverter for e-bike controller operating from 36V Li-ion battery. IC Role / Device Role / Timing Role: Per-leg high/low-side driver with independent EN control for regenerative braking sequencing. Use Value: 100V VB rating accommodates back-EMF spikes up to 85V without external clamping. |
| Battery-Powered Hand Tools | Class-D Power Amplifiers |
Use Scenario: Cordless drill with 18V–20V pack driving brushed motor via H-bridge. IC Role / Device Role / Timing Role: Dual half-bridge driver enabling forward/reverse and PWM speed control. Use Value: -40°C to +125°C rating ensures reliable startup in cold garages and sustained operation under load heating. | Use Scenario: 100W stereo amplifier using discrete N-MOSFET output stage with 300kHz carrier. IC Role / Device Role / Timing Role: High-speed gate driver for PWM modulation with minimal distortion at 20kHz audio band. Use Value: 1.5A/2.5A drive strength reduces gate charge time to <15ns, preserving THD+N <0.05% at full power. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRS2005STRPBF | Higher 600V high-side rating but slower 120ns propagation delay; requires external bootstrap diode. | Targeted at AC mains-fed PFC and inverters; less suitable for >500kHz DC-DC due to timing lag. | Select when 600V isolation is mandatory and switching frequency ≤200kHz. |
| LM5113MMX/NOPB | Lower 100V rating same as DGD05791U but only 1A/1.5A drive; no integrated EN pin - requires external logic. | Optimized for cost-sensitive industrial SMPS; lacks independent UVLO per side. | Select when budget constraints outweigh need for shoot-through protection and ultra-low quiescent current. |
Compared with IRS2005STRPBF and LM5113MMX/NOPB, the DGD05791UFN-7 delivers superior high-frequency performance (60ns delay vs. ≥120ns), tighter timing matching (≤10ns vs. ≥25ns), and integrated safety features (dual UVLO, hardware dead-time), making it optimal for compact, high-efficiency DC-DC and audio amplifier designs.
Availability
DGD05791UFN-7 is available at Aetrix Electronics and suitable for DC-DC converters, motor controls, and Class-D power amplifiers requiring stable component supply, extended temperature operation, and high-speed gate drive precision.
Supply support for DGD05791UFN-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in power management, signal integrity, and connectivity solutions for industrial, computing, and consumer markets.
The DGD05791U belongs to Diodes' high-frequency gate driver product line, engineered specifically for efficient, space-constrained half-bridge power stages in battery-powered and high-density power conversion systems.
FAQ
What is the maximum allowable dVS/dt for the DGD05791UFN-7?
The DGD05791UFN-7 specifies a maximum offset supply transient rate of 50 V/ns on the VS node. This limit ensures reliable level-shifting operation of the high-side driver under fast-switching conditions. Exceeding this rate may cause false triggering or latch-up; layout best practices include minimizing high-di/dt loop area and using low-inductance bootstrap paths.
Can the DGD05791UFN-7 drive P-channel high-side MOSFETs?
No - the DGD05791UFN-7 is designed exclusively for N-channel MOSFETs in high-side/low-side configurations. Its high-side driver uses a floating bootstrap architecture that sources current into the gate, which is incompatible with P-channel devices requiring gate voltage below the source. For P-channel high-side drive, a dedicated high-side driver with inverting logic or level-shifting architecture is required.
Is the NC pin (Pin 2) required to be grounded or left floating?
Pin 2 is a true no-connect (NC) with no internal bond wire or silicon connection. It must remain unconnected on the PCB - neither grounded nor tied to any net. Soldering or routing to this pin risks mechanical stress on the package or unintended coupling; Diodes' recommended layout shows it as an isolated copper clearance zone.
Does the DGD05791UFN-7 support 3.3V-only operation without VCC ≥ 5V?
Yes - the logic inputs (HIN, LIN, EN) operate down to 3.3V, and VCC can be supplied at 6.5V minimum per recommended conditions. However, VCC must be ≥6.5V to ensure proper driver output swing and UVLO margin; the 3.3V compatibility applies only to input logic thresholds, not supply voltage. For 3.3V system-level control, use a separate 12V VCC rail with level-shifted inputs.
DGD05791UFN-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 10-UFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- -
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 6.5V ~ 18V
- Logic Voltage - VIL, VIH:
- 0.8V, 2.5V
- Current - Peak Output (Source, Sink):
- 1.5A, 2.5A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 100 V
- Rise / Fall Time (Typ):
- 19ns, 15ns
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN3030-10
DGD05791UFN-7 FAQ
1.How can I place an order for DGD05791UFN-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DGD05791UFN-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DGD05791UFN-7 reliable?
The price and inventory of DGD05791UFN-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DGD05791UFN-7 is usually 5 days.
3.What payment methods are accepted for DGD05791UFN-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DGD05791UFN-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DGD05791UFN-7?
DGD05791UFN-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DGD05791UFN-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DGD05791UFN-7?
For technical support, including DGD05791UFN-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DGD05791UFN-7 requirements.
6.How does Aetrix verify that DGD05791UFN-7 is sourced from the original manufacturer or authorized distributors?
All DGD05791UFN-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DGD05791UFN-7 meets industry standards.
7.What is the process for return or replacement of DGD05791UFN-7?
All DGD05791UFN-7 units undergo pre-shipment inspection (PSI). If there is an issue with DGD05791UFN-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DGD05791UFN-7 part is unused and in its original packaging.
Return procedure for DGD05791UFN-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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