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Diodes Incorporated DGD05791UFN-7

Part No.:
DGD05791UFN-7
Manufacturer:
Diodes Incorporated
Category:
Gate Drivers
Package:
10-UFDFN Exposed Pad
Datasheet:
AetrixDGD05791UFN-7.pdf
Description:
IC GATE DRVR HALF-BRIDGE 10UFDFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,322

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Product details

Overview

DGD05791UFN-7 from Diodes Incorporated is a high-frequency dual-channel gate driver IC for N-channel MOSFET half-bridge topologies, featuring 100V floating high-side capability, 1.5A source / 2.5A sink output current, 60ns typical propagation delay, and operation from -40°C to +125°C in U-DFN3030-10. It enables compact DC-DC converters and Class-D amplifiers by supporting fast switching with matched timing.

For engineers reviewing the DGD05791UFN-7 datasheet, DGD05791UFN-7 pinout, DGD05791UFN-7 application, or DGD05791UFN-7 equivalent, key selection criteria include bootstrap-compatible 100V high-side drive, TTL/CMOS logic compatibility down to 3.3V, independent UVLO on both sides, cross-conduction prevention, and <10ns delay matching for high-frequency synchronous rectification.

Technical Context

The DGD05791UFN-7 integrates independent high-side and low-side drivers with dedicated bootstrap supply (VB/VS) and fixed logic supply (VCC/COM) rails. Its logic inputs (HIN, LIN, EN) accept 3.3V–5V CMOS/TTL levels and feature input hysteresis (0.7V) for noise immunity.

UVLO thresholds are separately set for VCC (4.0–6.7V turn-on) and VB (3.8–5.8V turn-on), ensuring MOSFET protection during supply brownout. Propagation delays (tON = 65ns, tOFF = 58ns) and delay matching (≤10ns) are specified at CL = 1nF and VS = 100V, enabling reliable >1MHz switching in hard-switched topologies.

Key Specifications

ParameterValue and Actual Design Meaning
High-Side Voltage Rating100V max floating supply (VB–VS), supports bootstrap operation up to 100V rail in half-bridge.
Output Drive Strength1.5A source / 2.5A sink per channel - sufficient to rapidly charge/discharge 1nF gate capacitance in <20ns.
Propagation Delay60ns typical (tON/tOFF) - enables stable PWM control at ≥1MHz with margin for dead-time insertion.
Delay Matching≤10ns max mismatch between HO and LO - critical for minimizing shoot-through risk in synchronous rectifiers.
Logic Input Compatibility3.3V–5V TTL/CMOS - directly interfaces with STM32, PIC, and ESP32 GPIO without level-shifting.
Operating Temperature-40°C to +125°C ambient - qualified for industrial motor drives and battery-powered power tools.
Quiescent Current<1µA shutdown ICCSD - preserves battery life in always-on enable architectures.

Pinout & Package

Package: U-DFN3030-10 (3.0mm × 3.0mm × 0.6mm, 10-terminal, exposed thermal pad). Molded green compound, matte tin terminals, JEDEC Level 3 moisture sensitivity.

Pin/TerminalCircuit RoleDesign Meaning
1 VCCLow-side and logic supply inputProvides power for internal logic and low-side driver; must be decoupled near pin.
2 NCNo internal connectionUnbonded die pad; must remain unconnected and un-soldered on PCB.
3 VBHigh-side floating supplyBootstrap capacitor positive terminal; rated up to +120V absolute max.
4 HOHigh-side gate drive outputDrives N-MOSFET gate referenced to VS; capable of 1.5A source / 2.5A sink.
5 VSHigh-side floating returnSource node of high-side MOSFET; serves as reference for HO and VB.
6 ENEnable logic inputActive-high enable; logic low disables both HO and LO outputs simultaneously.
7 HINHigh-side input signalIn-phase control input for HO; accepts 3.3V–5V logic with 0.7V hysteresis.
8 LINLow-side input signalIn-phase control input for LO; independent of HIN for asymmetric PWM control.
9 COMLow-side and logic groundCommon return for VCC, LO, and logic circuitry; must connect to PCB ground plane.
10 LOLow-side gate drive outputDrives N-MOSFET gate referenced to COM; matches HO timing within 10ns.

Key Features

FeatureDesign Value
Cross-conduction prevention logicHardware-enforced dead-time insertion prevents simultaneous HO/LO activation, eliminating shoot-through risk without external timing circuits.
Independent high-side and low-side UVLOSeparate undervoltage lockout on VB and VCC ensures safe disable when either supply drops below operational threshold.
Ultra-low standby current<1µA shutdown current enables energy-sensitive applications like cordless tool sleep modes.
Matched propagation delays≤10ns HO/LO delay mismatch allows precise dead-time tuning at >1MHz switching frequencies.
3.3V logic interfaceHIN/LIN/EN accept 3.3V logic directly - eliminates level shifters in modern MCU-based power designs.

Applications

DC-DC ConvertersMotor Controls

Use Scenario: Synchronous buck converter in 48V server PSU delivering 12V/100A output.

IC Role / Device Role / Timing Role: Half-bridge gate driver controlling high-side and low-side N-MOSFETs with 500kHz–1MHz PWM.

Use Value: 60ns propagation delay and ≤10ns matching reduce dead-time overhead, improving efficiency by ~0.8% at full load.

Use Scenario: 3-phase BLDC inverter for e-bike controller operating from 36V Li-ion battery.

IC Role / Device Role / Timing Role: Per-leg high/low-side driver with independent EN control for regenerative braking sequencing.

Use Value: 100V VB rating accommodates back-EMF spikes up to 85V without external clamping.

Battery-Powered Hand ToolsClass-D Power Amplifiers

Use Scenario: Cordless drill with 18V–20V pack driving brushed motor via H-bridge.

IC Role / Device Role / Timing Role: Dual half-bridge driver enabling forward/reverse and PWM speed control.

Use Value: -40°C to +125°C rating ensures reliable startup in cold garages and sustained operation under load heating.

Use Scenario: 100W stereo amplifier using discrete N-MOSFET output stage with 300kHz carrier.

IC Role / Device Role / Timing Role: High-speed gate driver for PWM modulation with minimal distortion at 20kHz audio band.

Use Value: 1.5A/2.5A drive strength reduces gate charge time to <15ns, preserving THD+N <0.05% at full power.

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRS2005STRPBFHigher 600V high-side rating but slower 120ns propagation delay; requires external bootstrap diode.Targeted at AC mains-fed PFC and inverters; less suitable for >500kHz DC-DC due to timing lag.Select when 600V isolation is mandatory and switching frequency ≤200kHz.
LM5113MMX/NOPBLower 100V rating same as DGD05791U but only 1A/1.5A drive; no integrated EN pin - requires external logic.Optimized for cost-sensitive industrial SMPS; lacks independent UVLO per side.Select when budget constraints outweigh need for shoot-through protection and ultra-low quiescent current.

Compared with IRS2005STRPBF and LM5113MMX/NOPB, the DGD05791UFN-7 delivers superior high-frequency performance (60ns delay vs. ≥120ns), tighter timing matching (≤10ns vs. ≥25ns), and integrated safety features (dual UVLO, hardware dead-time), making it optimal for compact, high-efficiency DC-DC and audio amplifier designs.

Availability

DGD05791UFN-7 is available at Aetrix Electronics and suitable for DC-DC converters, motor controls, and Class-D power amplifiers requiring stable component supply, extended temperature operation, and high-speed gate drive precision.

Supply support for DGD05791UFN-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in power management, signal integrity, and connectivity solutions for industrial, computing, and consumer markets.

The DGD05791U belongs to Diodes' high-frequency gate driver product line, engineered specifically for efficient, space-constrained half-bridge power stages in battery-powered and high-density power conversion systems.

FAQ

What is the maximum allowable dVS/dt for the DGD05791UFN-7?

The DGD05791UFN-7 specifies a maximum offset supply transient rate of 50 V/ns on the VS node. This limit ensures reliable level-shifting operation of the high-side driver under fast-switching conditions. Exceeding this rate may cause false triggering or latch-up; layout best practices include minimizing high-di/dt loop area and using low-inductance bootstrap paths.

Can the DGD05791UFN-7 drive P-channel high-side MOSFETs?

No - the DGD05791UFN-7 is designed exclusively for N-channel MOSFETs in high-side/low-side configurations. Its high-side driver uses a floating bootstrap architecture that sources current into the gate, which is incompatible with P-channel devices requiring gate voltage below the source. For P-channel high-side drive, a dedicated high-side driver with inverting logic or level-shifting architecture is required.

Is the NC pin (Pin 2) required to be grounded or left floating?

Pin 2 is a true no-connect (NC) with no internal bond wire or silicon connection. It must remain unconnected on the PCB - neither grounded nor tied to any net. Soldering or routing to this pin risks mechanical stress on the package or unintended coupling; Diodes' recommended layout shows it as an isolated copper clearance zone.

Does the DGD05791UFN-7 support 3.3V-only operation without VCC ≥ 5V?

Yes - the logic inputs (HIN, LIN, EN) operate down to 3.3V, and VCC can be supplied at 6.5V minimum per recommended conditions. However, VCC must be ≥6.5V to ensure proper driver output swing and UVLO margin; the 3.3V compatibility applies only to input logic thresholds, not supply voltage. For 3.3V system-level control, use a separate 12V VCC rail with level-shifted inputs.

DGD05791UFN-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
10-UFDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
-
Driven Configuration:
Half-Bridge
Channel Type:
Independent
Number of Drivers:
2
Gate Type:
N-Channel MOSFET
Voltage - Supply:
6.5V ~ 18V
Logic Voltage - VIL, VIH:
0.8V, 2.5V
Current - Peak Output (Source, Sink):
1.5A, 2.5A
Input Type:
Non-Inverting
High Side Voltage - Max (Bootstrap):
100 V
Rise / Fall Time (Typ):
19ns, 15ns
Operating Temperature:
-40°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
U-DFN3030-10

DGD05791UFN-7 FAQ

1.How can I place an order for DGD05791UFN-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DGD05791UFN-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DGD05791UFN-7 reliable?

The price and inventory of DGD05791UFN-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DGD05791UFN-7 is usually 5 days.

3.What payment methods are accepted for DGD05791UFN-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DGD05791UFN-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DGD05791UFN-7?

DGD05791UFN-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DGD05791UFN-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DGD05791UFN-7?

For technical support, including DGD05791UFN-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DGD05791UFN-7 requirements.

6.How does Aetrix verify that DGD05791UFN-7 is sourced from the original manufacturer or authorized distributors?

All DGD05791UFN-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DGD05791UFN-7 meets industry standards.

7.What is the process for return or replacement of DGD05791UFN-7?

All DGD05791UFN-7 units undergo pre-shipment inspection (PSI). If there is an issue with DGD05791UFN-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DGD05791UFN-7 part is unused and in its original packaging.

Return procedure for DGD05791UFN-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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