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Diodes Incorporated DGD0590AFU-7
- Part No.:
- DGD0590AFU-7
- Manufacturer:
- Diodes Incorporated
- Category:
- Gate Drivers
- Package:
- 8-VQFN Exposed Pad
- Datasheet:
-
DGD0590AFU-7.pdf
- Description:
- IC GATE DRV HALF-BRIDG QFN3030-8
- Quantity:
- Payment:
- Shipping:
Inventory:9,276
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Product details
Overview
DGD0590AFU-7 from Diodes Incorporated is a high-frequency dual-channel gate driver IC for half-bridge N-channel MOSFET configurations, featuring 40V floating high-side capability, 1.0A/1.0A high-side source/sink and 1.0A/3.0A low-side source/sink drive strength, 16ns/12ns typical propagation delays (HS/LS), and operation from -40°C to +125°C in V-QFN3030-8 package. It enables compact wireless power charger and motor drive designs with integrated bootstrap diode and TTL/CMOS-compatible logic inputs.
For engineers reviewing the DGD0590AFU-7 datasheet, DGD0590AFU-7 pinout, DGD0590AFU-7 application, or DGD0590AFU-7 equivalent, key selection criteria include high-side voltage rating (40V), matched propagation delay (≤4ns skew), UVLO threshold (3.4V ±0.4V), fast switching (27ns rise/17ns fall @3nF), and thermal resistance (120°C/W) for high-density power stage layout.
Technical Context
The DGD0590AFU-7 implements independent high-side and low-side drivers with isolated floating supply (VB–VS ≤40V) and shared logic ground (COM). Its internal bootstrap diode eliminates external diode placement, while matched propagation delays (16ns HS / 12ns LS) minimize shoot-through risk in high-frequency PWM control.
Logic inputs (HIN/LIN) accept 3.3V–5V CMOS/TTL levels with built-in pulldown resistors; UVLO (3.4V ±0.4V) disables outputs during VCC brownout. The device uses a single VCC supply (4.5–5.5V) for logic and low-side circuitry, while high-side operation relies on charge-pumped VB–VS rail.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| High-Side Voltage Rating | 40V max VB–VS offset - supports 36V bus systems with margin for transients |
| Output Drive Strength | HS: 1.0A source / 1.0A sink; LS: 1.0A source / 3.0A sink - drives logic-level MOSFETs with <10nC Qg at >1MHz |
| Propagation Delay | HS: 16ns typ; LS: 12ns typ - enables <5ns dead-time control for 2MHz+ switching |
| Rise/Fall Time | 27ns rise / 17ns fall @3nF load - reduces switching losses in GaN/MOSFET half-bridges |
| UVLO Threshold | 3.4V ±0.4V with hysteresis - prevents erratic gate drive during VCC ramp-up/down |
| Operating Temp Range | -40°C to +125°C ambient - qualified for industrial motor drives and automotive-adjacent chargers |
| Thermal Resistance | RθJA = 120°C/W on 2-layer FR-4 - requires minimal copper area for 1W dissipation at full load |
Pinout & Package
V-QFN3030-8 (Standard) package: 3.0mm × 3.0mm body, 0.65mm pitch, exposed thermal pad connected to COM.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 VB | High-side floating supply input | Connects to bootstrap capacitor top node; must withstand up to 50V transient |
| 2 HIN | High-side logic input | TTL/CMOS-compatible; internal pulldown ensures default-low state during MCU reset |
| 3 COM | Low-side return and substrate connection | Must be tied to PCB ground plane and thermal pad; serves as reference for LS output and logic |
| 4 LO | Low-side gate driver output | Drives MOSFET source directly; 3.0A sink capability handles high dV/dt Miller current |
| 5 VCC | Logic and low-side supply | 4.5–5.5V regulated input; powers internal logic, level shifters, and LS driver |
| 6 LIN | Low-side logic input | Independent of HIN; allows asymmetric PWM or synchronous rectification control |
| 7 VS | High-side floating supply return | Connects to MOSFET source node; defines high-side reference; subject to fast dV/dt |
| 8 HO | High-side gate driver output | Drives MOSFET gate with 1.0A source/sink; referenced to VS, not COM |
Key Features
| Feature | Design Value |
|---|---|
| Integrated bootstrap diode | Eliminates external diode and associated layout complexity; reduces BOM count by one passive |
| Matched propagation delays | 4ns inter-channel skew (16ns vs. 12ns) enables precise dead-time tuning without external delay compensation |
| Fast switching with low impedance | HS/LS output impedances ≤2.6Ω source / ≤1.0Ω sink ensure <30ns edge times into 3nF gate capacitance |
| Robust UVLO with hysteresis | 0.4V hysteresis prevents oscillation near threshold; guarantees clean output disable during supply faults |
| Extended temperature operation | Specified performance over -40°C to +125°C ambient enables use in sealed enclosures without derating |
Applications
| Wireless Power Transmitter | Brushless DC Motor Driver |
|---|---|
|
Use Scenario: 15W Qi-compliant transmitter using resonant half-bridge topology with 500kHz–1MHz switching. IC Role / Device Role / Timing Role: High-frequency gate driver controlling two logic-level GaN FETs; provides matched timing and fast edges to minimize conduction and switching losses. Use Value: 27ns/17ns rise/fall times reduce switching loss by ≥18% vs. legacy drivers, enabling smaller heatsinks and higher power density. |
Use Scenario: 24V BLDC inverter for HVAC blowers with space-constrained PCB layout and thermal constraints. IC Role / Device Role / Timing Role: Half-bridge driver for N-channel MOSFETs in 6-step commutation; delivers 3.0A low-side sink for robust Miller clamping during fast turn-off. Use Value: Integrated bootstrap diode and 120°C/W RθJA allow direct mounting on 2-layer board without thermal vias, reducing assembly cost. |
| USB-C PD Fast Charger | Industrial LED Driver |
|
Use Scenario: 65W USB-C PD 3.0 charger using active clamp flyback with synchronous rectification. IC Role / Device Role / Timing Role: Dual-channel driver for primary-side high-side switch and secondary-side synchronous rectifier MOSFETs. Use Value: Independent HIN/LIN inputs enable precise timing coordination between primary and secondary side, improving efficiency by 1.2% at full load. |
Use Scenario: Constant-current LED driver for street lighting with 48V input and 36V/1.5A output using buck-boost topology. IC Role / Device Role / Timing Role: Gate driver for half-bridge power stage operating at 300kHz with tight duty-cycle control. Use Value: -40°C to +125°C rating ensures stable gate drive under outdoor ambient extremes, eliminating cold-start failures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-frequency half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRS2005STRPBF | Higher VBS rating (600V), but slower propagation (60ns HS/50ns LS), no integrated bootstrap diode | Better suited for high-voltage PFC stages; requires external bootstrap diode and larger layout area | Select when >100V bus operation is required and switching frequency <200kHz |
| LM5113SDX/NOPB | Separate VDD/VBST supplies, 5A peak sink, but no internal bootstrap diode and wider SOIC-8 package | Preferred for high-current motor drives needing >3A sink; lacks integrated diode and thermal performance of V-QFN | Select when ultra-high low-side sink current (>3A) is mandatory and board space permits SOIC-8 |
Compared with IRS2005STRPBF and LM5113SDX/NOPB, the DGD0590AFU-7 offers superior high-frequency suitability (≤16ns delays), smaller footprint (3×3mm), and reduced BOM via integrated bootstrap diode-making it optimal for space- and speed-critical 5–40V half-bridge designs.
Availability
DGD0590AFU-7 is available at Aetrix Electronics and suitable for wireless power chargers, BLDC motor drives, and USB-C PD fast chargers requiring stable component supply, extended temperature support, and high-speed gate driving capability.
Supply support for DGD0590AFU-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and timing solutions for industrial, computing, and consumer markets.
The DGD0590AFU-7 belongs to Diodes' high-frequency gate driver product line, engineered specifically for compact, high-efficiency half-bridge power stages in wireless charging, motor control, and DC-DC conversion applications.
FAQ
What is the maximum allowable dV/dt on the VS pin?
The DGD0590AFU-7 specifies a maximum transient dVS/dt of 50 V/ns per Absolute Maximum Ratings. This rating ensures reliable level-shifting operation under fast-switching conditions typical in GaN-based converters. Exceeding this limit risks false triggering or latch-up; layout best practices include minimizing VS loop inductance and using local ceramic decoupling.
Does the DGD0590AFU-7 require an external bootstrap capacitor?
Yes-the internal bootstrap diode only replaces the external diode; a 0.1µF–0.22µF ceramic bootstrap capacitor is still required between VB and VS pins to replenish high-side supply during each switching cycle. The capacitor must be placed within 2mm of the VB/VS pins with low-inductance routing to maintain stability at >1MHz.
Can HIN and LIN be driven from separate controllers?
Yes-HIN and LIN are fully independent logic inputs with individual pulldown resistors. This allows asynchronous control, such as using one MCU timer channel for HIN and another for LIN, or combining with external logic for fault-handling dead-time insertion. No internal synchronization or cross-coupling exists between the two inputs.
Is the DGD0590AFU-7 qualified for automotive applications?
No-the DGD0590AFU-7 is not AEC-Q100 qualified. Diodes states that automotive-grade variants require specific change control, PPAP capability, and IATF 16949 manufacturing; this part is rated for industrial temperature range (-40°C to +125°C) but lacks automotive qualification documentation, stress testing, or certified process controls.
DGD0590AFU-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-VQFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 5.5V
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- 1A, 3A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 50 V
- Rise / Fall Time (Typ):
- 27ns, 29ns
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- V-QFN3030-8 (Type TH)
DGD0590AFU-7 FAQ
1.How can I place an order for DGD0590AFU-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DGD0590AFU-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DGD0590AFU-7 reliable?
The price and inventory of DGD0590AFU-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DGD0590AFU-7 is usually 5 days.
3.What payment methods are accepted for DGD0590AFU-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DGD0590AFU-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DGD0590AFU-7?
DGD0590AFU-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DGD0590AFU-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DGD0590AFU-7?
For technical support, including DGD0590AFU-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DGD0590AFU-7 requirements.
6.How does Aetrix verify that DGD0590AFU-7 is sourced from the original manufacturer or authorized distributors?
All DGD0590AFU-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DGD0590AFU-7 meets industry standards.
7.What is the process for return or replacement of DGD0590AFU-7?
All DGD0590AFU-7 units undergo pre-shipment inspection (PSI). If there is an issue with DGD0590AFU-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DGD0590AFU-7 part is unused and in its original packaging.
Return procedure for DGD0590AFU-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DGD0590AFU-7 Tags
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ZXGD3009E6TA
Diodes Incorporated
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