Diodes Incorporated DGD1504S8-13

Overview

DGD1504S8-13 from Diodes Incorporated is a 250V half-bridge gate driver IC in SO-8 (Type TH) package, designed to drive two N-channel MOSFETs or IGBTs in high-side/low-side configurations. It features 290mA source / 600mA sink output current, 430ns internal deadtime, TTL/CMOS-compatible 3.3V logic inputs, and operates from -40°C to +125°C - used in DC-DC converters and motor control inverters.

For engineers reviewing the DGD1504S8-13 datasheet, DGD1504S8-13 pinout, DGD1504S8-13 application, or DGD1504S8-13 equivalent, key selection criteria include bootstrap high-side voltage rating (250V), output drive strength, integrated deadtime, undervoltage lockout thresholds (VCCUV+, VBSUV+), and SO-8 thermal performance under high dVS/dt conditions.

Technical Context

The DGD1504 implements independent high-side and low-side drivers with floating high-side operation enabled by bootstrap topology. Its Schmitt-triggered IN and SD* inputs ensure noise immunity, while internal UVLO monitors both VCC (logic/low-side supply) and VB/VS (high-side supply) with hysteresis.

It delivers matched propagation delays (tON/tOFF ≤ 60ns skew) and fast switching (tR ≤ 170ns, tF ≤ 90ns) into 1nF loads. The fixed 430ns deadtime prevents shoot-through during HO/LO transitions, critical for reliable half-bridge operation in hard-switching power stages.

Key Specifications

Pinout & Package

Package: SO-8 (Type TH), surface-mount, lead-free, RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IR2104S and UCC27211D, the DGD1504S8-13 offers balanced integration - fixed 430ns deadtime eliminates tuning, 250V rating matches mid-voltage systems, and dual UVLO enhances reliability without increasing footprint or bill-of-materials count.

Availability

DGD1504S8-13 is available at Aetrix Electronics and suitable for DC-DC converters, motor control inverters, and AC-DC power supplies requiring stable component supply, extended temperature operation, and bootstrap-based high-side drive capability.

Supply support for DGD1504S8-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

The DGD1504 belongs to Diodes' high-voltage gate driver product line, engineered for cost-effective, robust half-bridge control in medium-voltage power conversion where bootstrap operation suffices and isolation is not required.

FAQ

What is the maximum allowable dVS/dt for reliable DGD1504S8-13 operation?

The DGD1504S8-13 is rated for 50V/ns dVS/dt, verified per datasheet absolute maximum ratings. This specification ensures stable high-side driver operation during fast switching transitions in half-bridge topologies, provided PCB layout minimizes parasitic inductance on the VS node and bootstrap loop.

Does DGD1504S8-13 support 3.3V-only microcontroller interfacing without level shifting?

Yes - its IN and SD* inputs accept 3.3V logic levels directly, with VIH(min) = 2.5V at VCC = 10V–20V and Schmitt-trigger hysteresis ensuring noise immunity. No external level shifter is needed when driven by standard 3.3V MCUs or FPGAs.

How does the internal deadtime of 430ns affect minimum achievable duty cycle?

The 430ns fixed deadtime limits the shortest possible high-side pulse width in continuous conduction mode. At 500kHz (2µs period), it consumes ~22% of the half-cycle, constraining practical minimum duty cycle to ~25% for safe commutation - critical for LLC or phase-shifted full-bridge designs.

Can DGD1504S8-13 drive IGBTs with gate charge exceeding 100nC?

With 290mA source / 600mA sink capability, the DGD1504S8-13 can drive IGBTs up to ~80nC Qg at 15V VGE, assuming <100ns rise/fall targets. For >100nC devices, gate resistors must be reduced and layout optimized - but thermal limits and SO-8 package dissipation constrain sustained high-current drive.